Patents by Inventor HYUNHYUB KO

HYUNHYUB KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11140487
    Abstract: Disclosed herein is a nano membrane. The nano membrane includes an insulating layer having a thickness corresponding to a diameter of each of metal nanowires and configured to contain the metal nanowires therein, and the metal nanowires arranged to cross and having portions of side surfaces which protrude from one surface of the insulating layer.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: October 5, 2021
    Assignee: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyunhyub Ko, Saewon Kang, Seungse Cho
  • Publication number: 20200336837
    Abstract: Disclosed herein is a nano membrane. The nano membrane includes an insulating layer having a thickness corresponding to a diameter of each of metal nanowires and configured to contain the metal nanowires therein, and the metal nanowires arranged to cross and having portions of side surfaces which protrude from one surface of the insulating layer.
    Type: Application
    Filed: July 1, 2020
    Publication date: October 22, 2020
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyunhyub KO, Saewon KANG, Seungse CHO
  • Publication number: 20200336836
    Abstract: Disclosed herein is a nano membrane. The nano membrane includes an insulating layer having a thickness corresponding to a diameter of each of metal nanowires and configured to contain the metal nanowires therein, and the metal nanowires arranged to cross and having portions of side surfaces which protrude from one surface of the insulating layer.
    Type: Application
    Filed: July 1, 2020
    Publication date: October 22, 2020
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyunhyub KO, Saewon KANG, Seungse CHO
  • Publication number: 20200140701
    Abstract: Disclosed is a coating composition which includes: polyurethane; and amphiphilic silica nanoparticles having an amine functional group and a fluorine functional group in their structure. Further provided are a polyurethane-silica composite film including the coating composition and a method of preparing the same.
    Type: Application
    Filed: May 22, 2019
    Publication date: May 7, 2020
    Inventors: Ho-Tak Jeon, Choon-Soo Lee, Minsoo Kim, Hyunhyub Ko
  • Patent number: 10605630
    Abstract: Provided are a tactile sensor, a method of manufacturing the tactile sensor, and a three-dimensional (3D) mapping method. The tactile sensor includes a total reflection layer; a pixel layer formed on the total reflection layer and including a microarray; and a tactile pad layer formed on the pixel layer.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: March 31, 2020
    Assignee: Ulsan National Institute of Science and Technology (UNIST)
    Inventors: Jiseok Lee, Hyunhyub Ko, Seonghyeon Ahn
  • Publication number: 20200016867
    Abstract: Disclosed is a silver nanowire film including: silver nanowires A unidirectionally aligned in a longitudinal direction; and silver nanowires B randomly aligned in the longitudinal direction, in which the silver nanowires A and the silver nanowires B each are plural and satisfy Equation 1 below. [A]/([A]+[B])>???[Equation 1] (In Equation 1 above, [A] represents the number of silver nanowires A having an alignment degree of less than ±15° from the alignment direction, and [B] represents the number of silver nanowires B having an alignment degree of ±15° or more from the alignment direction.
    Type: Application
    Filed: July 27, 2017
    Publication date: January 16, 2020
    Inventors: Hyunhyub KO, Seungse CHO, Saewon KANG, Stephen L. CRAIG
  • Patent number: 10456050
    Abstract: An artificial electronic skin according to the present disclosure comprises: a lower electrode; a first layer laminated on the lower electrode; a first micro dome formed on the first layer in a semispherical shape so as to stand upright upwards; a second layer laminated on the first layer; a second micro dome formed on the lower portion of the second layer, which lies opposite the first layer, in a semispherical shape to be able to engage with the first micro dome; an upper electrode laminated on the upper end surface of the second layer; and a pattern layer laminated on the upper end surface of the upper electrode so as to receive an external pressure applied thereto. The artificial electronic skin according to the present disclosure is advantageous in that a dynamic pressure, a static pressure, and a temperature can be sensed and distinguished by a single element, using different signals.
    Type: Grant
    Filed: November 11, 2015
    Date of Patent: October 29, 2019
    Assignee: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyunhyub Ko, Jonghwa Park, Heon Sang Lee
  • Publication number: 20190182597
    Abstract: Disclosed herein is a nano membrane. The nano membrane includes an insulating layer having a thickness corresponding to a diameter of each of metal nanowires and configured to contain the metal nanowires therein, and the metal nanowires arranged to cross and having portions of side surfaces which protrude from one surface of the insulating layer.
    Type: Application
    Filed: November 14, 2018
    Publication date: June 13, 2019
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyunhyub KO, Saewon KANG, Seungse CHO
  • Publication number: 20190056246
    Abstract: Provided are a tactile sensor, a method of manufacturing the tactile sensor, and a three-dimensional (3D) mapping method. The tactile sensor includes a total reflection layer; a pixel layer formed on the total reflection layer and including a microarray; and a tactile pad layer formed on the pixel layer.
    Type: Application
    Filed: June 1, 2018
    Publication date: February 21, 2019
    Inventors: Jiseok Lee, Hyunhyub Ko, Seonghyeon Ahn
  • Publication number: 20180140207
    Abstract: An artificial electronic skin according to the present disclosure comprises: a lower electrode; a first layer laminated on the lower electrode; a first micro dome formed on the first layer in a semispherical shape so as to stand upright upwards; a second layer laminated on the first layer; a second micro dome formed on the lower portion of the second layer, which lies opposite the first layer, in a semispherical shape to be able to engage with the first micro dome; an upper electrode laminated on the upper end surface of the second layer; and a pattern layer laminated on the upper end surface of the upper electrode so as to receive an external pressure applied thereto. The artificial electronic skin according to the present disclosure is advantageous in that a dynamic pressure, a static pressure, and a temperature can be sensed and distinguished by a single element, using different signals.
    Type: Application
    Filed: November 11, 2015
    Publication date: May 24, 2018
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyunhyub KO, Jonghwa PARK, Heon Sang LEE
  • Patent number: 8525228
    Abstract: Semiconductor-on-insulator (XOI) structures and methods of fabricating XOI structures are provided. Single-crystalline semiconductor is grown on a source substrate, patterned, and transferred onto a target substrate, such as a Si/SiO2 substrate, thereby assembling an XOI substrate. The transfer process can be conducted through a stamping method or a bonding method. Multiple transfers can be carried out to form heterogenous compound semiconductor devices. The single-crystalline semiconductor can be II-IV or III-V compound semiconductor, such as InAs. A thermal oxide layer can be grown on the patterned single crystalline semiconductor, providing improved electrical characteristics and interface properties. In addition, strain tuning is accomplished via a capping layer formed on the single-crystalline semiconductor before transferring the single-crystalline semiconductor to the target substrate.
    Type: Grant
    Filed: July 1, 2011
    Date of Patent: September 3, 2013
    Assignee: The Regents of the University of California
    Inventors: Ali Javey, Hyunhyub Ko, Kuniharu Takei
  • Publication number: 20120061728
    Abstract: Semiconductor-on-insulator (XOI) structures and methods of fabricating XOI structures are provided. Single-crystalline semiconductor is grown on a source substrate, patterned, and transferred onto a target substrate, such as a Si/SiO2 substrate, thereby assembling an XOI substrate. The transfer process can be conducted through a stamping method or a bonding method. Multiple transfers can be carried out to form heterogenous compound semiconductor devices. The single-crystalline semiconductor can be II-IV or III-V compound semiconductor, such as InAs. A thermal oxide layer can be grown on the patterned single crystalline semiconductor, providing improved electrical characteristics and interface properties. In addition, strain tuning is accomplished via a capping layer formed on the single-crystalline semiconductor before transferring the single-crystalline semiconductor to the target substrate.
    Type: Application
    Filed: July 1, 2011
    Publication date: March 15, 2012
    Applicant: The Regents of the University of California
    Inventors: ALI JAVEY, HYUNHYUB KO, KUNIHARU TAKEI