Patents by Inventor Hyun-jo Kim
Hyun-jo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240105209Abstract: Provided is an apparatus for automatically classifying an input sound source according to a preset criterion and are an apparatus and method for automatically classifying a sound source according to a set criterion by using deep learning. The apparatus for classifying a sound source includes a processor and a memory connected to the processor and storing a deep learning algorithm and original sound data, wherein the memory stores program instructions executable by the processor to generate n pieces of image data corresponding to the original sound data according to a preset method, generate training image data corresponding to the original sound data by using the n pieces of image data, train the deep learning algorithm by using the training image data, and classify target sound data according to a preset criterion by using the deep learning algorithm, wherein the n is a natural number greater than or equal to 2.Type: ApplicationFiled: November 18, 2021Publication date: March 28, 2024Applicant: HANYANG S&A CO., LTD.Inventors: Jin Yong JEON, Jun Hong PARK, Sang Heon KIM, Hyun LEE, Hyun In JO, Hong Pin ZHAO, Hyun Min KIM
-
Publication number: 20240075110Abstract: The present invention provides a method for preventing or treating a liver disease selected from the group consisting of non-alcoholic fatty liver, non-alcoholic steatohepatitis and hepatic fibrosis comprising administrating at least one selected from the group consisting of an Ssu72 peptide, a polynucleotide encoding the Ssu72 peptide, and an expression vector comprising the polynucleotide.Type: ApplicationFiled: September 15, 2023Publication date: March 7, 2024Inventors: Chang Woo LEE, Jin Kwan LEE, Hyun Soo KIM, Ji Hyun CHOI, Se Eun BYEON, HAE IN LEE, HYEONJU JO
-
Patent number: 11626396Abstract: Provided is an integrated circuit (IC) device including a logic cell having an area defined by a cell boundary. The logic cell includes a first device region, a device isolation region, and a second device region. The first device region and the second device region are arranged apart from each other in a first direction that is perpendicular to a second direction. The device isolation region is between the first device region and the second device region. A first maximum length of the first device region in the second direction is less than a width of the cell boundary in the second direction, and a second maximum length of the second device region is substantially equal to the width of the cell boundary in the second direction.Type: GrantFiled: October 5, 2021Date of Patent: April 11, 2023Assignee: Samsung Electronics Co.. Ltd.Inventors: Hyun-jo Kim, Joong-won Jeon
-
Publication number: 20220028852Abstract: Provided is an integrated circuit (IC) device including a logic cell having an area defined by a cell boundary. The logic cell includes a first device region, a device isolation region, and a second device region. The first device region and the second device region are arranged apart from each other in a first direction that is perpendicular to a second direction. The device isolation region is between the first device region and the second device region. A first maximum length of the first device region in the second direction is less than a width of the cell boundary in the second direction, and a second maximum length of the second device region is substantially equal to the width of the cell boundary in the second direction.Type: ApplicationFiled: October 5, 2021Publication date: January 27, 2022Applicant: Samsung Electronics Co., Ltd.Inventors: Hyun-jo KIM, Joong-won JEON
-
Patent number: 11183496Abstract: Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate structure which is disposed on the active fin to extend along a second direction intersecting the first direction, and a spacer which is disposed on at least one side of the gate structure, wherein the gate structure includes a first area and a second area which is adjacent to the first area in the second direction, wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along both the first area and the second area.Type: GrantFiled: March 27, 2019Date of Patent: November 23, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju-Youn Kim, Hyun-Jo Kim, Hwa-Sung Rhee
-
Patent number: 11152349Abstract: Provided is an integrated circuit (IC) device including a logic cell having an area defined by a cell boundary. The logic cell includes a first device region, a device isolation region, and a second device region. The first device region and the second device region are arranged apart from each other in a first direction that is perpendicular to a second direction. The device isolation region is between the first device region and the second device region. A first maximum length of the first device region in the second direction is less than a width of the cell boundary in the second direction, and a second maximum length of the second device region is substantially equal to the width of the cell boundary in the second direction.Type: GrantFiled: May 11, 2020Date of Patent: October 19, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-jo Kim, Joong-won Jeon
-
Patent number: 11145640Abstract: Provided is an integrated circuit (IC) device including a logic cell having an area defined by a cell boundary. The logic cell includes a first device region, a device isolation region, and a second device region. The first device region and the second device region are arranged apart from each other in a first direction that is perpendicular to a second direction. The device isolation region is between the first device region and the second device region. A first maximum length of the first device region in the second direction is less than a width of the cell boundary in the second direction, and a second maximum length of the second device region is substantially equal to the width of the cell boundary in the second direction.Type: GrantFiled: May 11, 2020Date of Patent: October 12, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-jo Kim, Joong-won Jeon
-
Publication number: 20210272950Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.Type: ApplicationFiled: May 14, 2021Publication date: September 2, 2021Inventors: DAE-LIM KANG, HYUN-JO KIM, JONG-MIL YOUN, SOO-HUN HONG
-
Patent number: 11011511Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.Type: GrantFiled: October 22, 2018Date of Patent: May 18, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Dae-Lim Kang, Hyun-Jo Kim, Jong-Mil Youn, Soo-Hun Hong
-
Patent number: 10854452Abstract: A method of manufacturing a semiconductor device includes forming first sacrificial cores on a first region of a lower structure and second sacrificial cores on a second region of the lower structure, forming spacers on side walls of the first sacrificial cores and side walls of the second sacrificial cores, forming a protective pattern covering the second sacrificial cores on the second region of the lower structure, removing the first sacrificial cores from the first region, and etching the lower structure using the spacers on the first region, and the second sacrificial cores and the spacers on the second region. By using only spacers as an etching mask in the first region and the sacrificial cores with the spacers as an etching mask in the second region, patterns with different widths are formed simultaneously on the first and second regions.Type: GrantFiled: June 5, 2019Date of Patent: December 1, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Jo Kim, Se Wan Park
-
Publication number: 20200273853Abstract: Provided is an integrated circuit (IC) device including a logic cell having an area defined by a cell boundary. The logic cell includes a first device region, a device isolation region, and a second device region. The first device region and the second device region are arranged apart from each other in a first direction that is perpendicular to a second direction. The device isolation region is between the first device region and the second device region. A first maximum length of the first device region in the second direction is less than a width of the cell boundary in the second direction, and a second maximum length of the second device region is substantially equal to the width of the cell boundary in the second direction.Type: ApplicationFiled: May 11, 2020Publication date: August 27, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Hyun-jo KIM, Joong-won JEON
-
Publication number: 20200273852Abstract: Provided is an integrated circuit (IC) device including a logic cell having an area defined by a cell boundary. The logic cell includes a first device region, a device isolation region, and a second device region. The first device region and the second device region are arranged apart from each other in a first direction that is perpendicular to a second direction. The device isolation region is between the first device region and the second device region. A first maximum length of the first device region in the second direction is less than a width of the cell boundary in the second direction, and a second maximum length of the second device region is substantially equal to the width of the cell boundary in the second direction.Type: ApplicationFiled: May 11, 2020Publication date: August 27, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Hyun-jo KIM, Joong-won JEON
-
Patent number: 10714467Abstract: Provided is an integrated circuit (IC) device including a logic cell having an area defined by a cell boundary. The logic cell includes a first device region, a device isolation region, and a second device region. The first device region and the second device region are arranged apart from each other in a first direction that is perpendicular to a second direction. The device isolation region is between the first device region and the second device region. A first maximum length of the first device region in the second direction is less than a width of the cell boundary in the second direction, and a second maximum length of the second device region is substantially equal to the width of the cell boundary in the second direction.Type: GrantFiled: February 14, 2019Date of Patent: July 14, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Hyun-jo Kim, Joong-won Jeon
-
Publication number: 20200152461Abstract: A method of manufacturing a semiconductor device includes forming first sacrificial cores on a first region of a lower structure and second sacrificial cores on a second region of the lower structure, forming spacers on side walls of the first sacrificial cores and side walls of the second sacrificial cores, forming a protective pattern covering the second sacrificial cores on the second region of the lower structure, removing the first sacrificial cores from the first region, and etching the lower structure using the spacers on the first region, and the second sacrificial cores and the spacers on the second region.Type: ApplicationFiled: June 5, 2019Publication date: May 14, 2020Inventors: Hyun Jo KIM, Se Wan PARK
-
Patent number: 10618605Abstract: A semi-submersible marine structure is described. The structure includes a hull including a pontoon, a deck disposed above the pontoon, and a plurality of columns supporting the deck from the pontoon. The structure also includes a plurality of tendons supporting the hull from a seabed. The pontoon has the shape of a circular ring, and the plurality of tendons are arranged at regular intervals along an external circumferential surface of the pontoon.Type: GrantFiled: February 16, 2016Date of Patent: April 14, 2020Assignee: SAMSUNG HEAVY IND. CO., LTD.Inventors: Rae Hyoung Yuck, Hyun Jo Kim, Sam Kwon Hong, Seung Jun Kim
-
Publication number: 20200066705Abstract: Provided is an integrated circuit (IC) device including a logic cell having an area defined by a cell boundary. The logic cell includes a first device region, a device isolation region, and a second device region. The first device region and the second device region are arranged apart from each other in a first direction that is perpendicular to a second direction. The device isolation region is between the first device region and the second device region. A first maximum length of the first device region in the second direction is less than a width of the cell boundary in the second direction, and a second maximum length of the second device region is substantially equal to the width of the cell boundary in the second direction.Type: ApplicationFiled: February 14, 2019Publication date: February 27, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Hyun-jo KIM, Joong-won JEON
-
Publication number: 20190221564Abstract: Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate structure which is disposed on the active fin to extend along a second direction intersecting the first direction, and a spacer which is disposed on at least one side of the gate structure, wherein the gate structure includes a first area and a second area which is adjacent to the first area in the second direction, wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along both the first area and the second area.Type: ApplicationFiled: March 27, 2019Publication date: July 18, 2019Inventors: Ju-Youn KIM, Hyun-Jo KIM, Hwa-Sung RHEE
-
Patent number: 10276567Abstract: Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate structure which is disposed on the active fin to extend along a second direction intersecting the first direction, and a spacer which is disposed on at least one side of the gate structure, wherein the gate structure includes a first area and a second area which is adjacent to the first area in the second direction, wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along both the first area and the second area.Type: GrantFiled: February 3, 2016Date of Patent: April 30, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ju-Youn Kim, Hyun-Jo Kim, Hwa-Sung Rhee
-
Patent number: 10269928Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.Type: GrantFiled: September 27, 2017Date of Patent: April 23, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Soo-Hun Hong, Hee-Soo Kang, Hyun-Jo Kim, Sang-Pil Sim, Hee-Don Jung
-
Publication number: 20190081035Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.Type: ApplicationFiled: October 22, 2018Publication date: March 14, 2019Inventors: DAE-LIM KANG, HYUN-JO KIM, JONG-MIL YOUN, SOO-HUN HONG