Patents by Inventor Hyunjoon ROH

Hyunjoon ROH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20220376080
    Abstract: A semiconductor device includes a gate pattern crossing over a substrate, the gate pattern including a gate insulating layer, a gate electrode, and a gate capping pattern sequentially stacked on the substrate, a gate spacer covering a sidewall of the gate pattern, a source/drain pattern on the substrate, the source/drain pattern being adjacent to the sidewall of the gate pattern, a contact pad on the source/drain pattern, a top surface of the contact pad being lower than a top surface of the gate electrode, a source/drain contact plug on the contact pad, and a protection spacer between the gate spacer and the source/drain contact plug, the protection spacer having a ring shape enclosing the source/drain contact plug.
    Type: Application
    Filed: June 10, 2022
    Publication date: November 24, 2022
    Inventors: Hongsik SHIN, Hyunjoon ROH, Heungsik PARK, Sughyun SUNG, Dohaing LEE, Wonhyuk LEE
  • Semiconductor device having a ring-shaped protection spacer enclosing a source/drain contact plug
    Patent number: 11362196
    Abstract: A semiconductor device includes a gate pattern crossing over a substrate, the gate pattern including a gate insulating layer, a gate electrode, and a gate capping pattern sequentially stacked on the substrate, a gate spacer covering a sidewall of the gate pattern, a source/drain pattern on the substrate, the source/drain pattern being adjacent to the sidewall of the gate pattern, a contact pad on the source/drain pattern, a top surface of the contact pad being lower than a top surface of the gate electrode, a source/drain contact plug on the contact pad, and a protection spacer between the gate spacer and the source/drain contact plug, the protection spacer having a ring shape enclosing the source/drain contact plug.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: June 14, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hongsik Shin, Hyunjoon Roh, Heungsik Park, Sughyun Sung, Dohaing Lee, Wonhyuk Lee
  • SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20210057538
    Abstract: A semiconductor device includes a gate pattern crossing over a substrate, the gate pattern including a gate insulating layer, a gate electrode, and a gate capping pattern sequentially stacked on the substrate, a gate spacer covering a sidewall of the gate pattern, a source/drain pattern on the substrate, the source/drain pattern being adjacent to the sidewall of the gate pattern, a contact pad on the source/drain pattern, a top surface of the contact pad being lower than a top surface of the gate electrode, a source/drain contact plug on the contact pad, and a protection spacer between the gate spacer and the source/drain contact plug, the protection spacer having a ring shape enclosing the source/drain contact plug.
    Type: Application
    Filed: April 7, 2020
    Publication date: February 25, 2021
    Inventors: Hongsik SHIN, Hyunjoon ROH, Heungsik PARK, Sughyun SUNG, Dohaing LEE, Wonhyuk LEE