Abstract: Provided are a pressure sensor including hybrid electronic sheet and a wearable device including the pressure sensor. The pressure sensor has excellent controllable electric characteristics and excellent mechanical flexibility and stability, and measures, for example, pressure in a simple and highly reproducible manner in which a resistance of a component in a sensor varies depending on applied pressure.

Abstract: The present invention relates to a non-invasive health indicator monitoring system including a sensing module, an electric power storage module, and a circuit module to collect health indicator information by contacting with a subject. In addition, the present invention also relates to a method for monitoring health indicator continuously by using the health indicator monitoring system.

Abstract: Provided are a pressure sensor including hybrid electronic sheet and a wearable device including the pressure sensor. The pressure sensor has excellent controllable electric characteristics and excellent mechanical flexibility and stability, and measures, for example, pressure in a simple and highly reproducible manner in which a resistance of a component in a sensor varies depending on applied pressure.

Abstract: The present invention relates to a non-invasive health indicator monitoring system including a sensing module, an electric power storage module, and a circuit module to collect health indicator information by contacting with a subject. In addition, the present invention also relates to a method for monitoring health indicator continuously by using the health indicator monitoring system.

Abstract: A spin transistor comprises a semiconductor substrate part having a lower cladding layer, a channel layer and an upper cladding layer sequentially stacked therein, a ferromagnetic source and drain on the substrate part, and a gate on the substrate part to control spins of electrons passing through the channel layer. The lower cladding layer comprises a first lower cladding layer and a second lower cladding layer having a higher band gap than that of the first lower cladding layer. The upper cladding layer comprises a first upper cladding layer and a second upper cladding layer having a higher band gap than that of the first upper cladding layer. The source and the drain are buried in an upper surface of the substrate part and extend downwardly to or under the first upper cladding layer.

Abstract: Provided is a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.

Abstract: The present invention provides for a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device of the present invention provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.

Abstract: A spin transistor having wide ON/OFF operation margin and producing less noise is provided. The spin transistor includes a substrate having a channel, a source, a drain and a gate formed on the substrate. The source and the drain are formed to have magnetization directions perpendicular to the length direction of the channel. The ON/OFF operations of the spin transistor can be controlled by generating a spin-orbit coupling induced magnetic field to have a direction parallel or anti-parallel to the magnetization directions of the source and the drain.