Patents by Inventor Hyun Oh Kang

Hyun Oh Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting device
    Patent number: 10546974
    Abstract: Disclosed are a light-emitting device, a method of fabricating the same, a light-emitting device package, and a lighting system. The light-emitting device includes a first-conductivity-type semiconductor layer, an active layer disposed on the first-conductivity-type semiconductor layer and including a quantum well having a composition of InxGa1-xN (0<x<1) and a quantum barrier having a composition of InyGa1-yN (0?y<1), and a second-conductivity-type semiconductor layer disposed on the active layer. The active layer includes a first quantum well disposed on the first-conductivity-type semiconductor layer, a first quantum barrier disposed on the first quantum well, a second quantum well disposed on the first quantum barrier, and a second quantum barrier disposed on the second quantum well.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: January 28, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Hyun Oh Kang
  • Light-emitting diode, light-emitting diode package, and lighting system including same
    Patent number: 10199534
    Abstract: A light emitting diode according to an embodiment includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a light emitting structure including a second conductive semiconductor layer on the active layer, wherein the active layer includes at least one quantum well layer and at least one quantum barrier layer, and each of the quantum well layers includes a plurality of well layers having different indium composition ratios, thereby improving internal quantum efficiency.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: February 5, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Hyun Oh Kang
  • LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE PACKAGE, AND LIGHTING SYSTEM INCLUDING SAME
    Publication number: 20180062028
    Abstract: A light emitting diode according to an embodiment includes: a substrate; a first conductive semiconductor layer on the substrate; an active layer on the first conductive semiconductor layer; and a light emitting structure including a second conductive semiconductor layer on the active layer, wherein the active layer includes at least one quantum well layer and at least one quantum barrier layer, and each of the quantum well layers includes a plurality of well layers having different indium composition ratios, thereby improving internal quantum efficiency.
    Type: Application
    Filed: March 11, 2016
    Publication date: March 1, 2018
    Inventor: Hyun Oh KANG
  • Light-emitting device and light-emitting device package
    Patent number: 9385270
    Abstract: A light-emitting device, according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a blocking layer on the active layer; and a second conductive semiconductor layer on the blocking layer, wherein the active layer comprises a plurality of quantum well layers and quantum barrier layers, and the quantum well layer is formed from InxGaYNInxGayN (0.11?x?0.14, 0<x+y?1).
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: July 5, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Hyun Oh Kang
  • LIGHT-EMITTING DEVICE
    Publication number: 20160190391
    Abstract: Disclosed are a light-emitting device, a method of fabricating the same, a light-emitting device package, and a lighting system. The light-emitting device includes a first-conductivity-type semiconductor layer, an active layer disposed on the first-conductivity-type semiconductor layer and including a quantum well having a composition of InxGa1-xN (0<×<1) and a quantum barrier having a composition of InyGa1-yN (0 <y<1), and a second-conductivity-type semiconductor layer disposed on the active layer. The active layer includes a first quantum well disposed on the first-conductivity-type semiconductor layer, a first quantum barrier disposed on the first quantum well, a second quantum well disposed on the first quantum barrier, and a second quantum barrier disposed on the second quantum well.
    Type: Application
    Filed: July 18, 2014
    Publication date: June 30, 2016
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Hyun Oh KANG
  • LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE PACKAGE
    Publication number: 20150280059
    Abstract: A light-emitting device, according to one embodiment of the present invention, comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a blocking layer on the active layer; and a second conductive semiconductor layer on the blocking layer, wherein the active layer comprises a plurality of quantum well layers and quantum barrier layers, and the quantum well layer is formed from InxGaYNInxGayN (0.11?x?0.14, 0<x+y?1).
    Type: Application
    Filed: October 2, 2013
    Publication date: October 1, 2015
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Hyun Oh Kang