Abstract: A junction structure element, a method of manufacturing the same, and an in-memory computing device including the same are disclosed. The junction structure element may include: a first polarization layer containing a material having a ferroelectric characteristic of being polarized only horizontally; a second polarization layer disposed on the first polarization layer and containing a material having a ferroelectric characteristic of being polarized only vertically; a source electrode and a drain electrode each in contact with the first polarization layer and spaced apart from each other; and a gate electrode disposed on the second polarization layer.

Abstract: This invention relates to a copolymer for the manufacture of chemical amplified photoresist and a chemical amplified positive photoresist composition comprising a copolymer for the manufacture of chemical amplified photoresist as a base resin, as represented by the following formula 1, an acid generator and additive, Wherein, R1, R2, R3 and R4 are independently a hydrogen atom or a lower alkyl group; R5, R6, R7 and R8 are a hydrogen atom, an alkyl group of C1-8, an alkoxy group, an alkoxycarbonyl group or a halogen atom; h and i are independently an integer of 0-8; k, l, m and n represent an integer of element units provided that 0.3<k/(k+l+m+n)<0.9, 0≦l/(k+l+m+n)<0.6, 0≦m/(k+l+m+n)<0.6, and 0.01<n/(k+l+m+n)<0.