Abstract: A light emitting device including a light emitting structure having a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; and a second electrode disposed on the second semiconductor layer. Further, the second electrode include a reflective layer disposed on the second semiconductor layer; a metal layer disposed on a side surface of the reflective layer and on a top surface of reflective layer; a first anti-oxidation layer on the metal layer; and a second anti-oxidation layer on the first anti-oxidation layer. In addition, the second anti-oxidation layer is more than 10 times thicker than the first anti-oxidation layer.

Abstract: A light emitting device including a light emitting structure having a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers; a first electrode electrically connected to the first semiconductor layer; and a second electrode disposed on the second semiconductor layer. Further, the second electrode include a reflective layer disposed on the second semiconductor layer; a metal layer disposed on a side surface of the reflective layer and on a top surface of reflective layer; a first anti-oxidation layer on the metal layer; and a second anti-oxidation layer on the first anti-oxidation layer. In addition, the second anti-oxidation layer is more than 10 times thicker than the first anti-oxidation layer.

Abstract: A light emitting device is disclosed. The light emitting device includes an electrode, which includes a reflective electrode layer disposed over a second semiconductor layer and a bonding electrode layer disposed in at least a partial region of an outer side surface of the reflective electrode layer while coming into contact with the second semiconductor layer. Thus, it may be possible to enhance bonding reliability between the electrode and the semiconductor layer.

Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a first reflection layer disposed on the second semiconductor layer. The first reflection layer includes at least a first layer having a first index of refraction and a second layer having a second index of refraction different from the first index of refraction. The first reflection layer is further disposed on a side surface of the second electrode and a portion of an upper surface of the second electrode.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first electrode layer electrically connected to the first conductive-type semiconductor layer, and a second electrode layer disposed on the second conductive-type semiconductor layer, wherein the second electrode layer includes a plurality of adhesive seeds spaced from one another on the light emitting structure, a reflective layer disposed on the plurality of adhesive seeds, and a protective layer disposed on the reflective layer, wherein the reflective layer contains silver (Ag) or an Ag alloy. As a result, it is possible to improve light reflectance and electrical properties of the electrode layer of the light emitting device and reliability of the electrode layer.

Abstract: Disclosed is a light emitting device, including: a substrate, a light emitting structure provided on the substrate, which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer laminated in sequential order, a transmissive electrode layer arranged on the light emitting structure, an electrode provided on the light emitting structure. Here, the electrode includes a pad electrode and a finger electrode, and an insertion element is placed between the finger electrode and the second conductive semiconductor layer, wherein the insertion element is formed such that at least one region thereof overlaps with the finger electrode in a vertical direction. Since the insertion element is formed under the finger electrode, it is possible to prevent light emitted by the active layer from being absorbed by the finger electrode. Accordingly, luminous efficacy of the light emitting device may be further enhanced.

Abstract: A light emitting device is disclosed. The light emitting device includes an electrode, which includes a reflective electrode layer disposed over a second semiconductor layer and a bonding electrode layer disposed in at least a partial region of an outer side surface of the reflective electrode layer while coming into contact with the second semiconductor layer. Thus, it may be possible to enhance bonding reliability between the electrode and the semiconductor layer.

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first electrode layer electrically connected to the first conductive-type semiconductor layer, and a second electrode layer disposed on the second conductive-type semiconductor layer, wherein the second electrode layer includes a plurality of adhesive seeds spaced from one another on the light emitting structure, a reflective layer disposed on the plurality of adhesive seeds, and a protective layer disposed on the reflective layer, wherein the reflective layer contains silver (Ag) or an Ag alloy. As a result, it is possible to improve light reflectance and electrical properties of the electrode layer of the light emitting device and reliability of the electrode layer.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: Disclosed is a light emitting device, including: a substrate, a light emitting structure provided on the substrate, which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer laminated in sequential order, a transmissive electrode layer arranged on the light emitting structure, an electrode provided on the light emitting structure. Here, the electrode includes a pad electrode and a finger electrode, and an insertion element is placed between the finger electrode and the second conductive semiconductor layer, wherein the insertion element is formed such that at least one region thereof overlaps with the finger electrode in a vertical direction. Since the insertion element is formed under the finger electrode, it is possible to prevent light emitted by the active layer from being absorbed by the finger electrode. Accordingly, luminous efficacy of the light emitting device may be further enhanced.

Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a first reflection layer disposed on the second semiconductor layer. The first reflection layer includes at least a first layer having a first index of refraction and a second layer having a second index of refraction different from the first index of refraction. The first reflection layer is further disposed on a side surface of the second electrode and a portion of an upper surface of the second electrode.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Abstract: Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.