Abstract: Semiconductor packages and/or assemblies having microchannels, a microchannel module, and/or a microfluidic network for thermal management, and associated systems and methods, are disclosed herein. The semiconductor package and/or assembly can include a substrate integrated with a microchannel and a coolant disposed within the microchannel to dissipate heat from a memory device and/or a logic device of the semiconductor package and/or assembly. The microchannel can be configured beneath the memory device and/or the logic device.

Abstract: Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.

Abstract: Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-? dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

Abstract: A semiconductor device having a semiconductor die, a redistribution layer (RDL), and an encapsulant. The RDL layer can be formed on a first surface of the semiconductor die. The encapsulant can enclose a second surface and side surfaces of the semiconductor die. The encapsulant can enclose side portions of the RDL.

Abstract: Semiconductor devices having interconnect structures with narrowed portions configured to mitigate thermomechanical stresses, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor package includes a semiconductor die and a pillar structure coupled to the semiconductor die. The pillar structure can include an end portion away from the semiconductor die, the end portion having a first cross-sectional area. The pillar structure can further include a narrowed portion between the end portion and the semiconductor die, the narrowed portion having a second cross-sectional area less than the first-cross-sectional area of the end portion. A bond material can be coupled to the end portion of the pillar structure.

Abstract: Semiconductor device assemblies are provided with a package substrate including one or more layers of thermally conductive material configured to conduct heat generated by one or more of semiconductor dies of the assemblies laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), via adhering a film comprising the layer of thermally conductive material to an outer surface of the package substrate, or via embedding a film comprising the layer of thermally conductive material to within the package substrate.

Abstract: Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-? dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include (a) a metal lattice extending laterally between the bond pad and the semiconductor substrate and (b) barrier members extending vertically between the metal lattice and the bond pad.

Abstract: Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-? dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

Abstract: Semiconductor device assemblies are provided with a package substrate including one or more layers of thermally conductive material configured to conduct heat generated by one or more of semiconductor dies of the assemblies laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), via adhering a film comprising the layer of thermally conductive material to an outer surface of the package substrate, or via embedding a film comprising the layer of thermally conductive material to within the package substrate.

Abstract: Semiconductor devices may include a die including a semiconductor material. The die may include a first active surface including first integrated circuitry on a first side of the die and a second active surface including second integrated circuitry on a second, opposite side of the die. In some embodiments, the die may include two die portions: a first die portion including the first active surface and a second die portion including the second active surface. The first die portion and the second die portion may be joined together with the first active surface facing away from the second active surface.

Abstract: A semiconductor component system includes a motherboard and a cooling system mounted to the motherboard. The cooling system includes sidewalls projecting from the motherboard. A sub-motherboard extends between the sidewalls and is spaced apart from the motherboard. The sidewalls and the sub-motherboard define a cooling channel over the motherboard. A connector is attached to the sub-motherboard and is configured to receive a semiconductor device daughterboard. The connector has contacts to electrically couple the semiconductor device daughterboard to the sub-motherboard.

Abstract: This patent application relates to methods and apparatus for temperature modification and reduction of contamination in bonding stacked microelectronic devices with heat applied from a bond head of a thermocompression bonding tool. The stack is substantially enclosed within a skirt carried by the bond head to reduce heat loss and contaminants from the stack, and heat may be added from the skirt.

Abstract: Semiconductor devices having metallization structures including crack-inhibiting structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a metallization structure formed over a semiconductor substrate. The metallization structure can include a bond pad electrically coupled to the semiconductor substrate via one or more layers of conductive material, and an insulating material—such as a low-? dielectric material—at least partially around the conductive material. The metallization structure can further include a crack-inhibiting structure positioned beneath the bond pad between the bond pad and the semiconductor substrate. The crack-inhibiting structure can include a barrier member extending vertically from the bond pad toward the semiconductor substrate and configured to inhibit crack propagation through the insulating material.

Abstract: A semiconductor component system includes a motherboard and a cooling system mounted to the motherboard. The cooling system includes sidewalls projecting from the motherboard. A sub-motherboard extends between the sidewalls and is spaced apart from the motherboard. The sidewalls and the sub-motherboard define a cooling channel over the motherboard. A connector is attached to the sub-motherboard and is configured to receive a semiconductor device daughterboard. The connector has contacts to electrically couple the semiconductor device daughterboard to the sub-motherboard.

Abstract: Heat spreaders for use in semiconductor device testing, such as burn-in testing, are disclosed herein. In one embodiment, a heat spreader is configured to be coupled to a burn-in testing board including a plurality of sockets. The heat spreader includes a base portion and a plurality of protrusions extending from the base portion. When the heat spreader is coupled to the burn-in testing board, the protrusions are configured to extend into corresponding ones of the sockets to thermally contact semiconductor devices positioned within the sockets. The heat spreader can promote a uniform temperature gradient across the burn-in board during testing of the semiconductor devices.

Abstract: Semiconductor device assemblies are provided with one or more layers of thermally conductive material disposed between adjacent semiconductor dies in a vertical stack. The thermally conductive material can be configured to conduct heat generated by one or more of the semiconductor dies in laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), or via adhering a film comprising the layer of thermally conductive material to one or more of the semiconductor dies.

Abstract: An apparatus for a BGA package includes a pad mounted on a substrate. The apparatus also includes a solder resist layer disposed over the substrate and a buffer layer disposed over the solder resist layer. The solder resist layer can have a first aperture and the buffer layer can have a second aperture. The first and second apertures are aligned such that at least a portion of the pad is exposed to create a solder-mask-defined mounting pad. A diameter of the second aperture is larger than a diameter of the first aperture.

Abstract: A semiconductor component system includes a motherboard and a cooling system mounted to the motherboard. The cooling system includes sidewalls projecting from the motherboard. A sub-motherboard extends between the sidewalls and is spaced apart from the motherboard. The sidewalls and the sub-motherboard define a cooling channel over the motherboard. A connector is attached to the sub-motherboard and is configured to receive a semiconductor device daughterboard. The connector has contacts to electrically couple the semiconductor device daughterboard to the sub-motherboard.

Abstract: Semiconductor device assemblies are provided with one or more layers of thermally conductive material disposed between adjacent semiconductor dies in a vertical stack. The thermally conductive material can be configured to conduct heat generated by one or more of the semiconductor dies in laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), or via adhering a film comprising the layer of thermally conductive material to one or more of the semiconductor dies.

Abstract: Semiconductor device assemblies are provided with a package substrate including one or more layers of thermally conductive material configured to conduct heat generated by one or more of semiconductor dies of the assemblies laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), via adhering a film comprising the layer of thermally conductive material to an outer surface of the package substrate, or via embedding a film comprising the layer of thermally conductive material to within the package substrate.