Abstract: The present invention provides a thin film comprising a perovskite halide represented by chemical formula 1. AB(BrxCly)3 ??[Chemical formula 1] wherein, A is a monovalent cation consisting of a combination of NH2CHNH2+ (formamidinium, FA), CH3NH3+ (methyl ammonium, MA) and Cs+, wherein FA is included in an amount of 0.2-0.8 moles with respect to 1 mole of the monovalent cation, B is at least one divalent cation selected from Pb2+, Sn2+, Ge2+, Ti2+, Zr2+, Mn2+, Ni2+, Fe2+, Zn2+and Cu2+, and x and y satisfy 0.5?x?0.8, 0.2?y?0.5, and x+y=1.

Abstract: A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.

Abstract: The present invention relates to a method for forming a charge transport layer on a substrate. Specifically, the present invention provides a method for manufacturing a device comprising a charge transport layer, which enables a uniform charge transport layer to be formed by a solution process even on a large area substrate. The method for manufacturing a device comprising a charge transport layer, of the present invention, may comprise: a charge forming step of forming first polarity charges on a transparent conductive substrate; a polymer electrolyte coating forming step of forming, on the transparent conductive substrate on which the first polarity charges are formed, a polymer electrolyte coating layer of second polarity charges which have the opposite polarity to that of the first polarity charges; and a first charge transport layer forming step of coating the polymer electrolyte coating layer with nanoparticles having the first polarity charges so as to form a first charge transport layer.

Abstract: A method for manufacturing a perovskite solar cell, includes disposing an electron transport layer on a transparent conductive substrate, disposing an additive-doped perovskite light absorption layer on the electron transport layer, disposing a hole transport layer on the additive-doped perovskite light absorption layer, and disposing an electrode on the hole transport layer. The disposing of the additive-doped perovskite light absorption layer includes adding an additive having hydrophobicity to a perovskite precursor solution, and applying the additive-added perovskite precursor solution onto the electron transport layer to form the additive-doped perovskite light absorption layer.

Abstract: The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

Abstract: The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

Abstract: Provided is a method for preparing a perovskite electronic device including steps of: forming an electron transport layer and a second light absorption layer including a perovskite material each independently on a first substrate and a second substrate; forming a first light absorption layer including a perovskite material on the electron transport layer; coating a solvent on the surface of the first light absorption layer and the second light absorption layer; bonding the second light absorption layer on the first light absorption layer; removing the second substrate; forming a hole transport layer on the second light absorption layer; and forming an electrode on the hole transport layer.

Abstract: The present application relates to a method for manufacturing an inverse opal structure membrane filter, the method comprising the steps of: preparing a mixed solution by mixing a nanoparticle dispersion solution and a sacrificial particle dispersion solution; applying the mixed solution onto a substrate to dry it; and heat-treating the mixed solution, wherein the surface of the sacrificial particles is modified by positive charges or negative charges.

Abstract: A resistance random access memory device includes a resistance change layer, including an organometallic halide having perovskite grains, disposed on a first electrode; and a second electrode disposed on the resistance change layer. A boundary between the perovskite grains comprises an amorphous metal oxide.

Abstract: A method for manufacturing a perovskite solar cell, includes disposing an electron transport layer on a transparent conductive substrate, disposing an additive-doped perovskite light absorption layer on the electron transport layer, disposing a hole transport layer on the additive-doped perovskite light absorption layer, and disposing an electrode on the hole transport layer. The disposing of the additive-doped perovskite light absorption layer includes adding an additive having hydrophobicity to a perovskite precursor solution, and applying the additive-added perovskite precursor solution onto the electron transport layer to form the additive-doped perovskite light absorption layer.

Abstract: The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIxBr3-x thin film (where 0?x?3) and/or a Cs2AgBiBrxI6-x thin film (where 0?x?6) having an elpasolite structure.

Abstract: The present disclosure relates to a method of synthesizing composites for removing heavy metals, including: preparing hollow hydroxyapatite particles including a functional group; preparing a composite in which magnetic oxide nanoparticles are combined on the hollow hydroxyapatite; and preparing a composite of hollow hydroxyapatite and metal particles by performing reduction annealing to the composite.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Abstract: The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

Abstract: The present invention relates to a method which can effectively remove perovskite light absorbers, hole transport layers, metal electrodes, and the like by immersing a waste perovskite-based photoelectric conversion element module in a cleaning solution under predetermined conditions. The present invention can recover a substrate from the waste module and manufacture a photoelectric conversion element having a photoelectric conversion efficiency level comparable to the initially high level again, using the same.

Abstract: The present disclosure relates to a resistance random access memory device, including a first electrode, a resistance change layer formed on the first electrode, and a second electrode formed on the resistance change layer, and the resistance change layer includes a bismuth halide-based BiIxBr3-x thin film (where 0?x?3) and/or a Cs2AgBiBrxI6-x thin film (where 0?x?6) having an elpasolite structure.

Abstract: The present disclosure provides a method for producing beta-tricalcium phosphate spherical particles containing magnetic ions. The method includes mixing acidic amino acid monomers, metal salt of magnetic ions and metal salt of calcium ions in de-ionized water to form a first solution; dissolve phosphate in de-ionized water to form a second solution; mixing the first and second solutions to form a third solution; and performing hydrothermal synthesis of the third solution.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method thereof.