Abstract: An air compressor according to an aspect of the present invention comprises: a housing; a rotating shaft which is disposed in the housing; a compression unit which is connected to the rotating shaft to compress and discharge inlet air; a motor unit which drives the rotating shaft; a control board which controls the motor unit; and a filter unit which filters out noise from external power and supplies the external power to the control board, wherein the housing includes a first cooling flow channel for cooling the motor unit and a second cooling flow channel for cooling the filter unit, and the first cooling flow channel communicates with the second cooling flow channel.

Abstract: The present invention relates to an air foil journal bearing in which air is introduced between a foil and a rotor rotating at high speed and generates pressure to support a radial load of the rotor and allow the rotor to rotate smoothly, and more particularly, to a housing fixing structure of an air foil journal bearing that improves durability against external impact or vibration by restricting an axial movement of a bump by means of two opposite ends of the bump and a top foil fixing portion.

Abstract: Air compressor in which the arrangement structure between a filter part and a discharge resistor reduces interference between the filter part and the discharge resistor and increases the space utilization of the filter part, making the air compressor more compact. The air compressor comprises a housing with a rotary shaft disposed inside it; a compression part connected to the rotary shaft which compresses and discharges introduced air; a motor part driving the rotary shaft; a control board for controlling the motor part, and the filter part which filters noise of external power and supplies the external power to the control board, wherein the filter part includes a capacitor assembly connected to an external power source, a transistor connected to the control board, a current sensor assembly connected to the transistor, and a discharge resistor connected to the capacitor assembly and discharges the residual charge in the capacitor assembly.

Abstract: Disclosed is a nozzle unit for laser processing, which can implement one-touch coupling and separation, thereby enabling easy nozzle replacement and uniform maintenance of a nozzle in a mounted state at an accurate position while preventing damage to a nozzle joint. The nozzle unit for laser processing includes: a nozzle body including a nozzle hole and a coupling protrusion formed at an outer periphery of the nozzle hole; and a nozzle adapter allowing the nozzle body to be inserted into and coupled to a lower portion thereof and including a nozzle coupling portion allowing the coupling protrusion at a first position to be inserted thereinto or separated therefrom and allowing the coupling protrusion at a second position to be seated thereon, the second position being spaced apart from the first position in a circumferential direction of the nozzle hole.

Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.

Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.