Patents by Inventor Hyun-woo YANG
Hyun-woo YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240416814Abstract: An embodiment vibration motor assembly of a seat includes a vibration motor and an upper housing disposed around the vibration motor to hold and fix the vibration motor, the upper housing configured to be fixed to a pad of the seat, and the upper housing including a holding part disposed at a circumference of a front surface of the upper housing to hold a circumference of the vibration motor and a fixing part protruding from a rear surface of the upper housing to cover and fix a rear surface of the vibration motor.Type: ApplicationFiled: August 30, 2024Publication date: December 19, 2024Inventors: Sang-Hark Lee, Sang-Soo Lee, Ho-Suk Jung, Jung-Sang You, Deok-Soo Lim, Sang-Do Park, Chan-Ho Jung, Jong-Su Ryu, Sang-In Woo, Beom-Sun Kim, Sang-Gyu Byeon, Hyun-Gyu Sung, Hyun-Seok Song, Tae-Hyoung Yang
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Publication number: 20240386849Abstract: A pixel includes: a first transistor including a gate electrode connected to a first node, a first electrode connected to a first power line for receiving a first driving power voltage via a second node, and a second electrode connected to a third node; a light-emitting element including a first electrode connected to the third node, and a second electrode connected to a second power line; a second transistor connected between a data line and the second node, and including a gate electrode connected to a first scan line; and a third transistor connected between the first node and a third power line for receiving an initialization power voltage. The second transistor is set to a turn-on state during at least a portion of a turn-on period of the third transistor. The initialization power voltage is set to be lower than a data signal.Type: ApplicationFiled: December 15, 2023Publication date: November 21, 2024Applicant: Samsung Display Co., LTD.Inventors: Gun Woo YANG, Hyun Young CHOI, Hae Ryeong PARK
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Patent number: 12103451Abstract: An embodiment vibration motor assembly of a seat includes a vibration motor and an upper housing disposed around the vibration motor to hold and fix the vibration motor, the upper housing configured to be fixed to a pad of the seat, and the upper housing including a holding part disposed at a circumference of a front surface of the upper housing to hold a circumference of the vibration motor and a fixing part protruding from a rear surface of the upper housing to cover and fix a rear surface of the vibration motor.Type: GrantFiled: November 7, 2022Date of Patent: October 1, 2024Assignees: Hyundai Motor Company, Kia Corporation, Hyundai Transys Inc., Jahwa Electronics Co., Ltd.Inventors: Sang-Hark Lee, Sang-Do Park, Hyun-Seok Song, Chan-Ho Jung, Hyun-Gyu Sung, Jong-Su Ryu, Sang-In Woo, Ho-Suk Jung, Tae-Hyoung Yang, Deok-Soo Lim, Sang-Soo Lee, Jung-Sang You, Sang-Gyu Byeon, Beom-Sun Kim
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Patent number: 12101958Abstract: An organic electronic device including a substrate, an organic electronic element formed on the substrate, and an encapsulation film encapsulating the organic electronic element. The organic electronic element includes a transparent electrode formed on the substrate, and a light emitting organic material layer formed on the transparent electrode. The light emitting organic material layer includes a hole transport layer, an emitting layer and an electron transport layer. The encapsulation film includes a pressure-sensitive adhesive layer. The pressure-sensitive adhesive layer includes a pressure-sensitive adhesive composition or a crosslinked product thereof. The pressure-sensitive adhesive composition includes a polymer derived from butylene, and has a Mooney viscosity (?*) of 5000 Pa·s to 107 Pa·s measured by a shear stress using a planar jig having a diameter of 8 mm at a strain of 5%, a frequency of 1 Hz and any one temperature point in the range of 30° C. to 150° C.Type: GrantFiled: March 17, 2021Date of Patent: September 24, 2024Assignee: LG CHEM, LTD.Inventors: Hyun Jee Yoo, Hyun Suk Kim, Jung Ok Moon, Se Woo Yang
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Publication number: 20240308477Abstract: A method of controlling the sensor cleaning system includes detecting contamination of an environmental sensor, determining a contamination source of the contamination when contamination of the environmental sensor is detected, and adjusting operation of an air cleaning system of the sensor cleaning system based on the determined contamination source.Type: ApplicationFiled: September 8, 2023Publication date: September 19, 2024Applicants: Hyundai Motor Company, Kia Corporation, DY AUTO CorporationInventors: Hyun Woo YOON, Ik Hoon KIM, Sang Jun AHN, Sung Min YANG, Won Seop CHOI, Hyong Do CHUNG, Seong Jun KIM, Sin Won KANG
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Publication number: 20200269350Abstract: Disclosed is a nozzle unit for laser processing, which can implement one-touch coupling and separation, thereby enabling easy nozzle replacement and uniform maintenance of a nozzle in a mounted state at an accurate position while preventing damage to a nozzle joint. The nozzle unit for laser processing includes: a nozzle body including a nozzle hole and a coupling protrusion formed at an outer periphery of the nozzle hole; and a nozzle adapter allowing the nozzle body to be inserted into and coupled to a lower portion thereof and including a nozzle coupling portion allowing the coupling protrusion at a first position to be inserted thereinto or separated therefrom and allowing the coupling protrusion at a second position to be seated thereon, the second position being spaced apart from the first position in a circumferential direction of the nozzle hole.Type: ApplicationFiled: October 29, 2019Publication date: August 27, 2020Applicant: HK CO., LTD.Inventors: Hyo Sang KIM, Hyun Woo YANG, Won Jae LEE
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Patent number: 10236442Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.Type: GrantFiled: August 3, 2016Date of Patent: March 19, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Jaehun Seo, Jong-Kyu Kim, Jung-Ik Oh, Inho Kim, Jongchul Park, Gwang-Hyun Baek, Hyun-woo Yang
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Patent number: 10199566Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.Type: GrantFiled: July 27, 2016Date of Patent: February 5, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-Ik Oh, Jong-Kyu Kim, Jongchul Park, Gwang-Hyun Baek, Kyungrae Byun, Hyun-Woo Yang
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Patent number: 9698198Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.Type: GrantFiled: January 22, 2015Date of Patent: July 4, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Seok Choi, Jaehun Seo, Hyun-woo Yang, Jongchul Park
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Publication number: 20170110656Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.Type: ApplicationFiled: August 3, 2016Publication date: April 20, 2017Inventors: Jaehun Seo, Jong-Kyu Kim, Jung-Ik Oh, Inho Kim, Jongchul Park, Gwang-Hyun Baek, Hyun-woo Yang
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Publication number: 20170098759Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.Type: ApplicationFiled: July 27, 2016Publication date: April 6, 2017Inventors: Jung-Ik OH, Jong-Kyu KIM, Jongchul PARK, Gwang-Hyun BAEK, Kyungrae BYUN, Hyun-Woo YANG
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Publication number: 20150311253Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.Type: ApplicationFiled: January 22, 2015Publication date: October 29, 2015Inventors: Young-Seok CHOI, Jaehun SEO, Hyun-woo YANG, Jongchul PARK