Abstract: A nozzle assembly for a sensor cleaning system of a vehicle. The nozzle assembly includes at least two nozzle passage portions and fluid is introduced into the at least two nozzle portions. The nozzle assembly includes a plurality of discharge ports configured to discharge the fluid flowing through the at least two nozzle passage portions out of the nozzle passage portions. The fluids introduced into the at least two nozzle passage portions flow independently of each other.

Abstract: A driving circuit includes: a display driver to generate a horizontal synchronization signal and a vertical synchronization signal according to a first clock signal of a first oscillator; a sensor driver to generate a touch signal according to a second clock signal of a second oscillator; and a determination circuit to detect a cycle of at least one of the horizontal synchronization signal or the vertical synchronization signal according to the second clock signal, and output a detection signal when the cycle is out of a range. The determination circuit is a part of the display driver or the sensor driver.

Abstract: An air compressor having a housing; a rotating shaft extending in the longitudinal direction inside the housing; a compression unit disposed in front of the rotating shaft and rotated by the rotating shaft to compress and discharge air that flows in; a motor unit which rotates the rotating shaft; a control board which controls the motor unit; a filter unit which supplies external electrical power to the control board and filters the noise of the electrical power; and a bus bar assembly which transfers the electrical power from the control board to the motor unit.

Abstract: Disclosed is a nozzle unit for laser processing, which can implement one-touch coupling and separation, thereby enabling easy nozzle replacement and uniform maintenance of a nozzle in a mounted state at an accurate position while preventing damage to a nozzle joint. The nozzle unit for laser processing includes: a nozzle body including a nozzle hole and a coupling protrusion formed at an outer periphery of the nozzle hole; and a nozzle adapter allowing the nozzle body to be inserted into and coupled to a lower portion thereof and including a nozzle coupling portion allowing the coupling protrusion at a first position to be inserted thereinto or separated therefrom and allowing the coupling protrusion at a second position to be seated thereon, the second position being spaced apart from the first position in a circumferential direction of the nozzle hole.

Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.

Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.