Abstract: The present invention relates to a method and apparatus for encoding a displacement video using image tiling. A method for encoding multi-dimensional data according to an embodiment of the present disclosure may comprise: converting the multi-dimensional data into one or more frames with two-dimensional characteristics; generating one or more frame groups by grouping the one or more frames with pre-configured number units; reconstructing frames belonging to each frame group into a tiled frame; and generating a bitstream by encoding the tiled frame. Here, the tiled frame may be constructed with one or more blocks, and each block may be constructed by rearranging pixels existing at the same location in the frames.

Abstract: A display device comprises a substrate; a circuit array layer comprising pixel drivers, data lines, first dummy lines, and second dummy lines; and a light emitting array layer. The display area comprises middle, first side, and second side regions. The data lines comprise first, second, and third data lines disposed in the middle, first side, and second side regions, respectively. The first dummy lines comprise a first data detour line disposed in the first side region and adjacent to a part of the second data line, and auxiliary lines. The second dummy lines comprise a second data detour line configured to connect the first data detour line to the third data line, and additional lines. The auxiliary lines comprise a bias auxiliary line to which a bias power is applied; and a second power auxiliary line to which a second power is applied.

Abstract: A method of preparing a negative electrode for a rechargeable lithium battery and a rechargeable lithium battery including the negative electrode, and the method of preparing the negative electrode may include preparing an active material layer on a current collector so that a coated portion in which the active material layer is formed and an uncoated region in which an active material is not formed are alternatively arranged, the active material, wherein the coated portion is formed by coating a first negative active material layer composition having a capillary number of about 0.25 to about 1.50 on the current collector and coating a second negative active material layer composition having a capillary number of about 0.28 to about 1.50 on the first negative active material layer composition.

Abstract: A packaging unit for direct cooling of a semiconductor device according to an embodiment includes a substrate made of a material capable of manufacturing the semiconductor device, having a material layer for forming the semiconductor device stacked on one side thereof, and a flow channel through which a cooling fluid flows formed on the other surface thereof to enable direct cooling of the semiconductor device using the cooling fluid, a packaging block disposed at a position spaced apart from the substrate for packaging of the semiconductor device, electrically connected to the semiconductor device using an electrode, and insulated from the semiconductor device using the electrode disposed on an insulating block, and a heat sink unit disposed below the packaging block and including a flow path forming portion in which a flow path communicating with the flow channel of the substrate is formed.

Abstract: A slot die for manufacturing a rechargeable battery electrode includes a first block with a chamber to accommodate an active material slurry, a second block facing and attached to the first block, a shim between the first and second blocks and including facing end portions, and a slot between the first and second blocks, and between the facing end portions, the slot including a first side defined by the first block, and a second side defined by the second block and facing the first side. Each of the end portions of the shim includes a width adjuster protruding to a second reference point from a first reference point in a width direction by a first adjusting width, extending to a third reference point from the second reference point at a first angle with respect to a discharging direction, and having a first adjusting length in the discharging direction.

Abstract: A catalyst for purifying exhaust gas includes a first catalyst including a first metal oxide on which platinum (Pt) and rhodium (Rh) are supported, and a second catalyst including a second metal oxide on which palladium (Pd) and platinum (Pt) are supported, wherein the first catalyst and the second catalyst are physically mixed.

Abstract: Provided is a carbon monoxide and hydrocarbon oxidation catalyst that includes a core-shell nanoparticle including a cobalt (Co) nanoparticle core having a hexahedral shape, and a shell surrounding the cobalt nanoparticle core and including cerium oxide.

Abstract: Provided are a nitride-based high electron mobility transistor having enhanced frequency characteristics and an improved structural stability and manufacturing method thereof. The nitride-based high electron mobility transistor includes a first semiconductor layer and a second semiconductor layer sequentially formed on a substrate, source drain electrodes formed on the second semiconductor layer, a first insulating film formed on the second semiconductor layer and having an opening, a dielectric formed on the first insulating film to surround the opening of the first insulating film, a second insulating film formed on an inner sidewall of the dielectric, and a gate electrode formed on the dielectric to fill the opening of the first insulating film and inside the inner sidewall of the dielectric. A width of the inner sidewall at a bottom end of the dielectric is smaller than a width of the inner sidewall at a top end of the dielectric.

Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

Abstract: A method of manufacturing a high-electron-mobility transistor device is provided. The method includes sequentially forming a transition layer and a semiconductor layer on a substrate, etching a portion of a surface of the semiconductor layer to form a barrier layer region having a certain depth and forming a barrier layer in the barrier layer region, forming a source electrode and a drain electrode on a 2-dimensional electron gas (2-DEG) layer upward exposed at a surface of the semiconductor layer, in defining the 2-DEG layer formed along an interface between the semiconductor layer and the barrier layer, forming a passivation layer on the semiconductor layer, the barrier layer, the source electrode, and the drain electrode and etching a portion of the passivation layer to upward expose the source electrode, the drain electrode, and the barrier layer, and forming a gate electrode on the upward exposed barrier layer.

Abstract: Provided is a single pole double through (SPDT) switch including a series switching unit including first and second series switching elements commonly connected to a common input port, and a shunt switching unit including a plurality of shunt switching elements connected in parallel to a first signal path connecting the common input port to a first output port and a second signal path connecting the common input port to a second output port, wherein first and second inductors are respectively connected to gate terminals of the first and second series switching elements.

Abstract: An apparatus and method for generating an electrical circuit of semiconductor channel resistor including a first passive element part including a resistor and a capacitor connected in parallel between a first port and a second port, and an ohmic resistor connected in series to the resistor and the capacitor which are connected in parallel are provided. The apparatus includes a substrate selection part configured to receive a selected substrate item; a resistor selection part configured to receive a selected resistor item; a capacitor selection part configured to receive a selected capacitor item; and a circuit generating part configured to generate an electrical circuit from the selected substrate item, the selected resistor item, and the selected capacitor item.

Abstract: A slot die for manufacturing a rechargeable battery electrode includes a first block with a chamber to accommodate an active material slurry, a second block facing and attached to the first block, a shim between the first and second blocks and including facing end portions, and a slot between the first and second blocks, and between the facing end portions, the slot including a first side defined by the first block, and a second side defined by the second block and facing the first side. Each of the end portions of the shim includes a width adjuster protruding to a second reference point from a first reference point in a width direction by a first adjusting width, extending to a third reference point from the second reference point at a first angle with respect to a discharging direction, and having a first adjusting length in the discharging direction.

Abstract: A slot coating apparatus having an improved coating bead region is disclosed. An embodiment of the invention provides a slot coating apparatus configured to coat a coating liquid containing a high concentration of particles over a substrate, where the slot coating apparatus includes: a first slot die that is arranged at a downstream side of the coating liquid; a second slot die that is arranged at an upstream side of the coating liquid and is positioned facing the first slot die; a coating bead cover that extends from one side of the first slot die along a movement direction of the substrate; and a pressure adjustment device that is disposed at the second slot die side and is configured to form a pressure gradient between the downstream and the upstream.

Abstract: A slot coating apparatus having an improved coating bead region is disclosed. An embodiment of the invention provides a slot coating apparatus configured to coat a coating liquid containing a high concentration of particles over a substrate, where the slot coating apparatus includes: a first slot die that is arranged at a downstream side of the coating liquid; a second slot die that is arranged at an upstream side of the coating liquid and is positioned facing the first slot die; a coating bead cover that extends from one side of the first slot die along a movement direction of the substrate; and a pressure adjustment device that is disposed at the second slot die side and is configured to form a pressure gradient between the downstream and the upstream.

Abstract: The present invention relates to a preparation process for a thin film composite (TFC) membrane (hereinafter TFC membrane), and provides a method for the preparation of a membrane through a one-step process using a dual (double layer)-slot coating technique. In the dual (double layer)-slot coating process according to the present invention, a TFC membrane can be prepared by: forming a double-solution layer through a one-step process of performing simultaneous applying/contact of two immiscible solutions, in which two kinds of reactive organic monomers are dissolved, on a porous support; and synthesizing a selective layer through a crosslinking reaction between the organic monomers at an interface of the double layer.

Abstract: A high electron mobility transistor includes a substrate including a first surface and a second surface facing each other and having a via hole passing through the first surface and the second surface, an active layer on the first surface, a cap layer on the active layer and including a gate recess region exposing a portion of the active layer, a source electrode and a drain electrode on one of the cap layer and the active layer, an insulating layer on the source electrode and the drain electrode and having on opening corresponding to the gate recess region to expose the gate recess region, a first field electrode on the insulating layer, a gate electrode electrically connected to the first field electrode on the insulating layer, and a second field electrode on the second surface and contacting the active layer through the via hole.

Abstract: Provided herein is a patch antenna including a multilayered substrate on which a plurality of dielectric layers are laminated; at least one metal pattern layer disposed between the plurality of dielectric layers outside a central area of the multilayered substrate; an antenna patch disposed on an upper surface of the multilayered substrate and within the central area; a ground layer disposed on a lower surface of the multilayered substrate; a plurality of connection via patterns penetrating the plurality of dielectric layers to connect the metal pattern layer and the ground layer, and surrounding the central area; a transmission line comprising a first transmission line unit disposed on the upper surface of the multilayered substrate and located outside the central area, and a second transmission line unit disposed on the upper surface of the multilayered substrate and located within the central area; and an impedance transformer located below the second transmission line unit within the central area of the m

Abstract: The present invention relates to a high reliability field effect power device and a manufacturing method thereof. A method of manufacturing a field effect power device includes sequentially forming a transfer layer, a buffer layer, a barrier layer and a passivation layer on a substrate, patterning the passivation layer by etching a first region of the passivation layer, and forming at least one electrode on the first region of the barrier layer exposed by patterning the passivation layer, wherein the first region is provided to form the at least one electrode, and the passivation layer may include a material having a wider bandgap than the barrier layer to prevent a trapping effect and a leakage current of the field effect power device.

Abstract: Provided herein is a patch antenna including a multilayered substrate on which a plurality of dielectric layers are laminated; at least one metal pattern layer disposed between the plurality of dielectric layers outside a central area of the multilayered substrate; an antenna patch disposed on an upper surface of the multilayered substrate and within the central area; a ground layer disposed on a lower surface of the multilayered substrate; a plurality of connection via patterns penetrating the plurality of dielectric layers to connect the metal pattern layer and the ground layer, and surrounding the central area; a transmission line comprising a first transmission line unit disposed on the upper surface of the multilayered substrate and located outside the central area, and a second transmission line unit disposed on the upper surface of the multilayered substrate and located within the central area; and an impedance transformer located below the second transmission line unit within the central area of the m