Patents by Inventor Hyunyoung Yeo

Hyunyoung Yeo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image sensor chip
    Patent number: 11776982
    Abstract: An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: October 3, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Minho Jang, Doowon Kwon, Dongchan Kim, Bokwon Kim, Kyungrae Byun, Jungchak Ahn, Hyunyoung Yeo
  • IMAGE SENSOR CHIP
    Publication number: 20210351220
    Abstract: An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.
    Type: Application
    Filed: December 28, 2020
    Publication date: November 11, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Minho Jang, Doowon Kwon, Dongchan Kim, Bokwon Kim, Kyungrae Byun, Jungchak Ahn, Hyunyoung Yeo