Patents by Inventor Hyurk Choon Kwon

Hyurk Choon Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9719959
    Abstract: Provided is a hydrogen ion sensor including: a substrate having a well and a first contact, the well having a second, a third, a fourth and a fifth contacts, the second contact having the same conductive type as the well, and the third, the fourth, and the fifth contacts having an opposite conductive type to the well; a first gate insulation layer on a region between the fourth contact and the fifth contact; a second gate insulation layer on a region between the third contact and the fourth contact; and a hydrogen ion sensing unit formed on the first gate insulation layer, wherein the hydrogen ion sensing unit transfers a voltage level adjusted according to a hydrogen ion concentration of a solution to be measured, to the first gate insulation layer.
    Type: Grant
    Filed: November 18, 2014
    Date of Patent: August 1, 2017
    Assignee: Kyungpook National University Industry-Academic Cooperation Foundation
    Inventors: Shin-Won Kang, Hyun-Min Jeong, Hyeon-Ji Yun, Hyurk-Choon Kwon
  • Publication number: 20150137190
    Abstract: Provided is a hydrogen ion sensor including: a substrate having a well and a first contact, the well having a second, a third, a fourth and a fifth contacts, the second contact having the same conductive type as the well, and the third, the fourth, and the fifth contacts having an opposite conductive type to the well; a first gate insulation layer on a region between the fourth contact and the fifth contact; a second gate insulation layer on a region between the third contact and the fourth contact; and a hydrogen ion sensing unit formed on the first gate insulation layer, wherein the hydrogen ion sensing unit transfers a voltage level adjusted according to a hydrogen ion concentration of a solution to be measured, to the first gate insulation layer.
    Type: Application
    Filed: November 18, 2014
    Publication date: May 21, 2015
    Inventors: Shin-Won Kang, Hyun-Min Jeong, Hyeon-Ji Yun, Hyurk-Choon Kwon
  • Patent number: 8283736
    Abstract: A hydrogen ion sensing device of the present invention includes: a reference electrode; a sensing portion which senses hydrogen ions by contacting an ion aqueous solution; and a plurality of ring-like lateral bipolar junction transistors, each including a lateral collector, an emitter, a vertical collector and a floating gate connected to the reference electrode, with the emitter surrounded by the floating gate and the lateral collector, wherein the plurality of ring-like lateral bipolar junction transistors are formed on a common substrate and are connected in parallel.
    Type: Grant
    Filed: February 19, 2011
    Date of Patent: October 9, 2012
    Assignee: Kyungpook National University Industry Academic Cooperation
    Inventors: Shin Won Kang, Hyurk Choon Kwon, Se Hyuk Yeom
  • Publication number: 20110204455
    Abstract: A hydrogen ion sensing device includes: a reference electrode; a sensing portion which senses hydrogen ions by contacting an ion aqueous solution; and a plurality of ring-like lateral bipolar junction transistors, each including a lateral collector, an emitter, a vertical collector and a floating gate connected to the reference electrode, with the emitter surrounded by the floating gate and the lateral collector, wherein the plurality of ring-like lateral bipolar junction transistors are formed on a common substrate and are connected in parallel. With this configuration, an operation point can be adjusted by the bases current with the emitter voltage fixed. In addition, polarities of values of X and Y axes are positive in comparison with a p-channel MOSFET driven with the common collector setting and the device can be operated in a linear region (an active mode) in comparison with ISFET operating in a saturation region.
    Type: Application
    Filed: February 19, 2011
    Publication date: August 25, 2011
    Applicant: Kyungpook National University Industry Academic Cooperation Foundation
    Inventors: SHIN WON KANG, Hyurk Choon Kwon, Se Hyuk Yeom