Abstract: A plasma processing apparatus and a processing apparatus having a widened process condition range allowing plasma generation are obtained by increasing microwave propagation efficiency. The plasma processing apparatus includes a processing chamber where plasma processing is performed, and microwave introducer for introducing microwaves into the processing chamber. The microwave introducer includes a dielectric member transmitting the microwaves. The dielectric member has a shape in cross section in a direction approximately perpendicular to a transmitting direction of the microwaves through the dielectric member that allows transmission of the microwaves of substantially a single mode. The dielectric member has a thickness T in the transmitting direction that satisfies a condition of (?×(2m+0.7)/4)?T?(?×(2m+1.3)/4), where ? is a wavelength of the microwaves of the single mode transmitted through the dielectric member and m is an arbitrary integer.

Abstract: A plasma processing apparatus and a processing apparatus having a widened process condition range allowing plasma generation are obtained by increasing microwave propagation efficiency. The plasma processing apparatus includes a processing chamber (1, 2) where plasma processing is performed, and microwave introduction means (3a-6a, 3b-6b, 19a, 19b) for introducing microwaves into the processing chamber. The microwave introduction means (3a-6a, 3b-6b, 19a, 19b) includes a dielectric member (5a, 5b, 19a, 19b) transmitting the microwaves. The dielectric member has a shape in cross section in a direction approximately perpendicular to a transmitting direction of the microwaves through the dielectric member that allows transmission of the microwaves of substantially a single mode. The dielectric member has a thickness T in the transmitting direction that satisfies a condition of (?×(2m+0.7)/4)?T?(?×(2m+1.