Patents by Inventor I.C. Jang

I.C. Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etch method to reduce micro-loading
    Patent number: 8901004
    Abstract: A method of producing plurality of etched features in an electronic device is disclosed that avoids micro-loading problems thus maintaining more uniform sidewall profiles and more uniform critical dimensions. The method comprises performing a first time-divisional plasma etch process step within a plasma chamber to a first depth of the plurality of etched features, and performing a flash process step to remove any polymers from exposed surfaces of the plurality of etched features without requiring an oxidation step. The flash process step is performed independently of the time-divisional plasma etch step. A second time-divisional plasma etch process step is performed within the plasma chamber to a second depth of the plurality of etched features. The method may be repeated until a desired etch depth is reached.
    Type: Grant
    Filed: July 20, 2010
    Date of Patent: December 2, 2014
    Assignee: Lam Research Corporation
    Inventors: Tom Kamp, Qian Fu, I. C. Jang, Linda Braly, Shenjian Liu
  • PLASMA ETCH METHOD TO REDUCE MICRO-LOADING
    Publication number: 20110021029
    Abstract: A method of producing plurality of etched features in an electronic device is disclosed that avoids micro-loading problems thus maintaining more uniform sidewall profiles and more uniform critical dimensions. The method comprises performing a first time-divisional plasma etch process step within a plasma chamber to a first depth of the plurality of etched features, and performing a flash process step to remove any polymers from exposed surfaces of the plurality of etched features without requiring an oxidation step. The flash process step is performed independently of the time-divisional plasma etch step. A second time-divisional plasma etch process step is performed within the plasma chamber to a second depth of the plurality of etched features. The method may be repeated until a desired etch depth is reached.
    Type: Application
    Filed: July 20, 2010
    Publication date: January 27, 2011
    Applicant: Lam Research Corporation
    Inventors: Tom Kamp, Qian Fu, I.C. Jang, Linda Braly, Shenjian Liu