Abstract: A frameless panel light includes a light source module and a lamp cover having a front portion and side portions surrounding the front portion. The front and side portions define an accommodating space. The light source module is disposed in the accommodating space and includes a light source and a light guide plate. The light guide plate includes a light-transmissive substrate including first and second major surfaces and a side surface connecting the first and second major surfaces and a microstructure formed on the first major surface and including a recess and an annular groove around the recess. The annular groove has a depth greater than that of the recess. A bottom of the recess is at higher elevation than the first major surface from the second major surface. The annular groove has a protruding portion protruding from a bottom of the annular groove.

Abstract: A light guide plate includes a light-transmissive substrate and at least one microstructure. The light-transmissive substrate includes first and second major surfaces and a side surface connecting the first and second major surfaces. The microstructure is formed on the first major surface. The microstructure comprises a recess and an annular groove around the recess. The annular groove has a depth greater than a depth of the recess. A bottom of the recess is at higher elevation than the first major surface from the second major surface.

Abstract: A surface mount process, a surface mount system, and a feeding apparatus thereof are provided. The surface mount system includes a feeding apparatus and a surface mount apparatus. The feeding apparatus includes a vibrating tray feeder module, a vibrating linear feeder module, and a component recycling module. The vibrating tray feeder module has a circular vibrating conveyer belt with a vibrating tray output end. The vibrating linear feeder module has a linear vibrating conveyer belt connected to the vibrating tray output end and has a linear vibrating output end opposite the vibrating tray feeder module. The component recycling module is disposed under the vibrating tray feeder module to recycle the rejected components. The surface mount apparatus has a component receiving unit corresponding to the linear vibrating output end of the vibrating linear feeder module.

Abstract: A surface mount process, a surface mount system, and a feeding apparatus thereof are provided. The surface mount system includes a feeding apparatus and a surface mount apparatus. The feeding apparatus includes a vibrating tray feeder module, a vibrating linear feeder module, and a component recycling module. The vibrating tray feeder module has a circular vibrating conveyer belt with a vibrating tray output end. The vibrating linear feeder module has a linear vibrating conveyer belt connected to the vibrating tray output end and has a linear vibrating output end opposite the vibrating tray feeder module. The component recycling module is disposed under the vibrating tray feeder module to recycle the rejected components. The surface mount apparatus has a component receiving unit corresponding to the linear vibrating output end of the vibrating linear feeder module.

Abstract: An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas diversion nozzle is positioned inside the chamber. The laser beam produced by the excimer laser passes through the gas diversion nozzle. The gas supply device connects with the gas diversion nozzle for providing a jet of gas to the laser-irradiated area and carrying away any pollutants from the irradiated area.

Abstract: A method of manufacturing nano crystals disclosed herein is applicable to the fabrications of memory device and solar cell. The method of manufacturing nano crystals at least comprises steps of: providing a substrate with a thin film formed thereon, and transforming the thin film into the nano crystals by laser annealing, wherein a thickness of the thin film is equal to or less than about 50 ?, and a wavelength of the laser selected for laser annealing is equal to or less than about 500 nm.

Abstract: An inspection method and apparatus of laser crystallized silicons in the low-temperature poly Si (LTPS) process. The crystalline quality is inspected by using a visible light source to irradiate the surface of the poly Si and examining the variations of the reflected light caused by the protrusion arrangement at the surface of the poly Si. This method can be adopted on the poly Si samples prepared by the line scanning of the excimer laser annealing (ELA) technology.

Abstract: A laser annealing apparatus is disclosed, which is adapted for a laser annealing process. The laser annealing apparatus comprises a laser-generating module, a resistance-measuring module, and a host circuit module, wherein the laser-generating module provides a laser beam to recrystallize an amorphous silicon thin film to form a polysilicon thin film. The resistance-measuring module is adapted for measuring the sheet resistance of the polysilicon thin film. Besides, the host circuit module is electrically coupled to and between the laser-generating module and the resistance-measuring module. The host circuit module outputs a feedback signal to the laser-generating module in accordance with the sheet resistance value. Then, the energy density of the laser beam is optimized. The laser annealing apparatus can improve the quality of the thin film, and increase the yield rate of the laser annealing process.

Abstract: An apparatus for laser annealing an amorphous silicon film is provided. The amorphous silicon film includes a first region and a second region not overlapped with the first region. The apparatus comprises: a laser beam source module providing a laser beam; a beam splitter, disposed on a path of the laser beam, splitting the laser beam into a first laser beam and a second laser beam; a first photomask disposed on an optical path of the first laser beam and in front of the amorphous silicon film; and a second photomask disposed an optical path of the second laser beam and in front of the amorphous silicon film; wherein the first laser beam is emitted to the first region, and the second laser beam is emitted to the amorphous silicon film in the second region after the amorphous silicon film in the first region is re-crystallized.

Abstract: A method of fabrication a polysilicon layer is provided. A substrate is provided and then a buffer layer having a plurality of trenches thereon is formed over the substrate. Thereafter, an amorphous silicon layer is formed over the buffer layer. Finally, a laser annealing process is conducted so that the amorphous silicon layer melts and crystallizes into a polysilicon layer starting from the upper reach of the trenches. This invention can be applied to fabricate the polysilicon layer of a low temperature polysilicon thin film transistor liquid crystal display such that the crystals inside the polysilicon layer are uniformly distributed and have a larger average size.

Abstract: An inspection method and apparatus of laser crystallized silicons in the low-temperature poly Si (LTPS) process. The crystalline quality is inspected by using a visible light source to irradiate the surface of the poly Si and examining the variations of the reflected light caused by the protrusion arrangement at the surface of the poly Si. This method can be adopted on the poly Si samples prepared by the line scanning of the excimer laser annealing (ELA) technology.

Abstract: A diffusion barrier multi-layer structure for a TFT LCD by the LTPS process and the process for fabricating thereof are disclosed. By increasing the coarseness between two layers of the diffusion barrier multi-layer structure with a plasma treatment, or by forming a loose and porous impurity collecting layer between two layers of the diffusion barrier multi-layer structure to trap the impurity atoms, the impurity diffusion can be effectively obstructed.

Abstract: A diffusion barrier multi-layer structure for a TFT LCD by the LTPS process and the process for fabricating thereof are disclosed. By increasing the coarseness between two layers of the diffusion barrier multi-layer structure with a plasma treatment, or by forming a loose and porous impurity collecting layer between two layers of the diffusion barrier multi-layer structure to trap the impurity atoms, the impurity diffusion can be effectively obstructed.

Abstract: A gate of a thin film transistor (TM is formed on a surface of a substrate. A gate insulating (GI) layer and an amorphous silicon layer are then sequentially formed on the gate. A dehydrogen treatment is performed thereafter, and a re-crystallizing process is performed to transform the amorphous silicon layer into a crystalline silicon layer. Then, a doped n+ layer is formed on the gate, and portions of the doped n+ layer and the crystalline silicon layer are removed thereafter. Finally, a source and a gate of the thin film transistor are formed on the gate, and a passivation layer Is formed to cover the source and the gate.

Abstract: A gate of a thin film transistor (TFT) is formed on a surface of a substrate. A gate insulating (GI) layer and an amorphous silicon layer are then sequentially formed on the gate. A dehydrogen treatment is performed thereafter, and a re-crystallizing process is performed to transform the amorphous silicon layer into a crystalline silicon layer. Then, a doped n30 layer is formed on the gate, and portions of the doped n+ layer and the crystalline silicon layer are removed thereafter. Finally, a source and a gate of the thin film transistor are formed on the gate, and a passivation layer is formed to cover the source and the gate.

Abstract: A method of fabrication a polysilicon layer is provided. A substrate is provided and then a buffer layer having a plurality of trenches thereon is formed over the substrate. Thereafter, an amorphous silicon layer is formed over the buffer layer. Finally, a laser annealing process is conducted so that the amorphous silicon layer melts and crystallizes into a polysilicon layer starting from the upper reach of the trenches. This invention can be applied to fabricate the polysilicon layer of a low temperature polysilicon thin film transistor liquid crystal display such that the crystals inside the polysilicon layer are uniformly distributed and have a larger average size.