Abstract: Disclosed are exponential function calculation method, exponential function calculation system, and exponential function calculation circuit for calculating an exponential function value of an input value. The exponential function calculation method includes: dividing the input value as a sum of an integer value and a decimal value; representing the integer value by an integer bit string with a first length, and representing the decimal value by a decimal bit string with a second length; looking up a first table to obtain a first value corresponding to an exponent function value of the integer value according to the integer bit string, and interpolating to obtain an interpolation value corresponding to an exponent function value of the decimal value according to the decimal bit string; and calculating an output value corresponding to an exponent function value of the input value according to a product of the first value and the interpolation value.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: The present disclosure provides a SARS-CoV-2 vaccine composition and use thereof. The SARS-CoV-2 vaccine composition includes a mutant SARS-CoV-2 spike protein with N-linked glycosylation in N-terminal domain or receptor binding domain, and can effectively elicit an immune response in an individual against different SARS-CoV-2 variants.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: A supporting device adapted to support an electronic apparatus is provided. The supporting device includes a base and a supporting frame. The base includes a first through hole and a second through hole. The supporting frame is adapted to support the electronic apparatus. The supporting frame includes an arc frame and a virtual axis. The arc frame passes through the first through hole and the second through hole so that a portion of the arc frame is located in the base. The arc frame rotates along the virtual axis so that the electronic apparatus is switched between a first state of use and a second state of use.

Abstract: A supporting device adapted to support an electronic apparatus is provided. The supporting device includes a base and a supporting frame. The base includes a first through hole and a second through hole. The supporting frame is adapted to support the electronic apparatus. The supporting frame includes an arc frame and a virtual axis. The arc frame passes through the first through hole and the second through hole so that a portion of the arc frame is located in the base. The arc frame rotates along the virtual axis so that the electronic apparatus is switched between a first state of use and a second state of use.

Abstract: A support device adapted to support an electronic device is provided. The electronic device has a display surface. The support device includes a base, a support frame, and at least one torque fixing assembly. The base includes a first arc surface portion. The support frame includes a second arc surface portion opposite to the first arc surface portion and an axis. The support frame rotates along the axis such that the second arc surface portion slides relative to the first arc surface portion and the electronic device switches between a first use state and a second use state. The torque fixing assembly is disposed at the first arc surface portion and the second arc surface portion. When the second arc surface portion slides relative to the first arc surface portion, the second arc surface portion rubs against the torque fixing assembly and torque is generated.

Abstract: A support device adapted to support an electronic device is provided. The electronic device has a display surface. The support device includes a base, a support frame, and at least one torque fixing assembly. The base includes a first arc surface portion. The support frame includes a second arc surface portion opposite to the first arc surface portion and an axis. The support frame rotates along the axis such that the second arc surface portion slides relative to the first arc surface portion and the electronic device switches between a first use state and a second use state. The torque fixing assembly is disposed at the first arc surface portion and the second arc surface portion. When the second arc surface portion slides relative to the first arc surface portion, the second arc surface portion rubs against the torque fixing assembly and torque is generated.

Abstract: An apparatus includes a container having a base for receiving a drive, and a clam having a first end that is rotatably coupled to the base, a second end, and a body extending from the first end to the second end, the clam rotatable relative to the base so that the clam can be placed at a first position and a second position, wherein when the clam is at the first position, the container allows the drive to be placed therein, and wherein when the clam is at the second position, the clam secures the drive relative to the container. A frame includes at least sixteen slots to receive respective drive storage devices, which store respective SFF8201 7 mm drives, in EIA RS310D 1U space. A frame includes at least forty-eight slots to receive respective drive storage devices, which store respective SFF8201 7 mm drives, in EIA RS310D 2U space.

Abstract: A method of epitaxial growth of a germanium film on a silicon substrate includes the steps of: providing a silicon substrate, placing the silicon substrate in a vacuum chamber, heating the silicon substrate to a temperature that is lower than 300° C., and forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber, by employing an electron cyclotron resonance chemical vapor deposition (ECR-CVD) approach, wherein the step of forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber further includes dissociating a reaction gas introduced into the vacuum chamber in utilization of a microwave source, such that the monocrystalline germanium film is deposited on the silicon substrate, and wherein the reaction gas includes at least germane (GeH4) and hydrogen gas (H2).

Abstract: An apparatus includes a container having a base for receiving a drive, and a clam having a first end that is rotatably coupled to the base, a second end, and a body extending from the first end to the second end, the clam rotatable relative to the base so that the clam can be placed at a first position and a second position, wherein when the clam is at the first position, the container allows the drive to be placed therein, and wherein when the clam is at the second position, the clam secures the drive relative to the container. A frame includes at least sixteen slots to receive respective drive storage devices, which store respective SFF8201 7 mm drives, in EIA RS310D 1U space. A frame includes at least forty-eight slots to receive respective drive storage devices, which store respective SFF8201 7 mm drives, in EIA RS310D 2U space.