Abstract: A semiconductor package structure includes a base having a first surface and a second surface opposite thereto, wherein the base comprises a wiring structure, a first electronic component disposed over the first surface of the base and electrically coupled to the wiring structure, a second electronic component disposed over the first surface of the base and electrically coupled to the wiring structure, wherein the first electronic component and the second electronic component are separated by a molding material, a first hole and a second hole formed on the second surface of the base, and a frame disposed over the first surface of the base, wherein the frame surrounds the first electronic component and the second electronic component.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A semiconductor package structure includes a substrate having a wiring structure. A first semiconductor die is disposed over the substrate and is electrically coupled to the wiring structure. A second semiconductor die is disposed over the substrate and is electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are arranged side-by-side. Holes are formed on a surface of the substrate, wherein the holes are located within a projection of the first semiconductor die or the second semiconductor die on the substrate. Further, a molding material surrounds the first semiconductor die and the second semiconductor die, and surfaces of the first semiconductor die and the second semiconductor die facing away from the substrate are exposed by the molding material.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A light reflecting structure, a backlight module, and a display device are provided. The light reflecting structure is configured to reflect light emitted from plural light emitting units. The light reflecting structure includes a bottom portion and plural sidewall portions. The sidewall portions are erected on the bottom portion. The sidewall portions respectively and correspondingly surround the light-emitting units, and the light emitted from each of the light-emitting units can be directed to a light reflecting surface corresponding to each of the sidewall portions to be reflected outward. A distance P is defined between any two adjacent sidewall portions, and each of the sidewall portions has a height H1. The distance P and the height H1 satisfy a first inequality, and the first inequality is H1<P/2×tan ?. ? represents a complementary angle of a half light-intensity angle of each of the light-emitting units.

Abstract: A light reflecting structure, a backlight module, and a display device are provided. The light reflecting structure is configured to reflect light emitted from plural light emitting units. The light reflecting structure includes a bottom portion and plural sidewall portions. The sidewall portions are erected on the bottom portion. The sidewall portions respectively and correspondingly surround the light-emitting units, and the light emitted from each of the light-emitting units can be directed to a light reflecting surface corresponding to each of the sidewall portions to be reflected outward. A distance P is defined between any two adjacent sidewall portions, and each of the sidewall portions has a height H1. The distance P and the height H1 satisfy a first inequality, and the first inequality is H1<P/2×tan ?. ? represents a complementary angle of a half light-intensity angle of each of the light-emitting units.

Abstract: A light guide lens includes a main body. The main body includes a light exiting surface, a light incident surface opposite to the light exiting surface, and a plurality of microstructure members formed on the light incident surface and extending radially and being oriented to a microstructure center. A light emitting module and a display apparatus is also included.

Abstract: A light guide lens includes a main body. The main body includes a light exiting surface, a light incident surface opposite to the light exiting surface, and a plurality of microstructure members formed on the light incident surface and extending radially and being oriented to a microstructure center. A light emitting module and a display apparatus is also included.

Abstract: A backlight module includes a light source, a light guide plate, a quantum dot enhancement film unit and a reflecting unit. The light guide plate includes a light-input side that faces the light source, and an opposite side that is opposite to the light-input side. The quantum dot enhancement film unit is laminated with the light guide plate. The reflecting unit is disposed to reflect light directed from the light guide plate into the quantum dot enhancement film unit.

Abstract: A dot inversion driving apparatus for an analog thin film transistor liquid crystal display (TFT LCD) panel and the method thereof are disclosed. The driving apparatus includes a control circuit and a source driver IC. The control circuit rearranges the orders and polarities of the grayscale signals of the TFT LCD panel, divides the grayscale signals into two groups, and outputs one of the groups during one of two half periods of each frame. The source driver IC collects the grayscale signals output by the control circuit. During the first half period using one scan line of the first group as a unit, the source driver IC outputs the grayscale signals to the pixels of the first group; and during the second half period using one scan line of the second group as a unit, the source driver IC outputs the grayscale signals to the pixels of the second group.