Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: A two dimensional display is prepared representing a cross section of the earth and designed to establish natural data lineations. The vertical axis is marked in terms of a parameter of depth below the earth's surface and along the horizontal axis, are marked seismic receiver stations. For each station, a graph of an intrinsic lithologic property as a function of depth is computed and plotted beneath the corresponding station. Contour crossing points are determined at unit intervals along the plotted graph together with the sign of the corresponding derivative. Contour crossing points, beneath adjacent stations, that match as to numerical value and derivative sign are connected by contour segments. Shading patterns are applied to the zones between contour segments to enhance the natural lineation of the chosen intrinsic lithologic function.