Patents by Inventor I-Chun HSIEH

I-Chun HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200126787
    Abstract: A method for lithography patterning includes depositing a target layer over a substrate, the target layer including an inorganic material; implanting ions into the target layer, resulting in an ion-implanted target layer; forming a photoresist layer directly over the ion-implanted target layer; and exposing the photoresist layer to radiation in a photolithography process. The ion-implanted target layer reduces reflection of the radiation back to the photoresist layer during the photolithography process.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang
  • Publication number: 20200082351
    Abstract: A method for processing a schedule applicable in an electronic device includes determining at least one scheduled task and at least one application in relation to each scheduled task. The appropriate application in relation to the scheduled task is activated when the predetermined execution time corresponding to the scheduled task arrives. The application is controlled to perform at least one predetermined schedule operation, and prompt a user that the scheduled task is completed.
    Type: Application
    Filed: September 3, 2019
    Publication date: March 12, 2020
    Inventors: I-CHUN CHEN, FU-YEN HSIEH
  • Publication number: 20200035821
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a gate structure over the substrate. The semiconductor device structure also includes a source/drain feature in the substrate, protruding from the substrate, and on a sidewall surface of the gate structure. The semiconductor device structure also includes an insulating barrier structure in the substrate and partially covering the bottom and sidewalls of the source/drain feature.
    Type: Application
    Filed: May 7, 2019
    Publication date: January 30, 2020
    Inventors: Ting-Chun KUAN, I-Chih CHEN, Chih-Mu HUANG, Fu-Tsun TSAI, Sheng-Lin HSIEH, Kuan-Jung CHEN
  • Patent number: 10522349
    Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang
  • Publication number: 20190164745
    Abstract: A method includes depositing a target layer over a substrate; reducing a reflection of a light incident upon the target layer by implanting ions into the target layer, resulting in an ion-implanted target layer; coating a photoresist layer over the ion-implanted target layer; exposing the photoresist layer to the light using a photolithography process, wherein the target layer reduces reflection of the light at an interface between the ion-implanted target layer and the photoresist layer during the photolithography process; developing the photoresist layer to form a resist pattern; etching the ion-implanted target layer with the resist pattern as an etch mask; processing the substrate using at least the etched ion-implanted target layer as a process mask; and removing the etched ion-implanted target layer.
    Type: Application
    Filed: October 31, 2018
    Publication date: May 30, 2019
    Inventors: Cheng-Han Yang, Tsung-Han Wu, Chih-Wei Chang, Hsin-mei Lin, I-Chun Hsieh, Hsi-Yen Chang
  • Patent number: 9791773
    Abstract: The present invention relates to a photosensitive resin composition for black matrix, as well as a color filter and a liquid crystal display (LCD) device formed by the composition. The aforementioned photosensitive resin composition comprises an alkali-soluble resin (A), a compound containing vinyl unsaturated group(s) (B), a photo initiator (C), quinonediazide sulfonic acid ester (D), a solvent (E) and black pigment (F). The alkali-soluble resin (A) includes epoxy resin having unsaturated group(s) (A-1), which is obtained by reacting an epoxy resin (i) having at least two epoxy groups with a compound (ii) having at least one vinyl unsaturated group and carboxyl group. The aforementioned photo initiator (C) includes an O-acyloxime compound (C-1).
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: October 17, 2017
    Assignee: CHI MEI CORPORATION
    Inventors: Hao-Wei Liao, I-Chun Hsieh
  • Patent number: 8980506
    Abstract: The present invention relates to a photosensitive resin composition, which comprises an alkali-soluble resin (A), a compound (B) containing vinyl unsaturated group(s), a photoinitiator (C), ortho-naphthoquinone diazide sulfonic acid ester (D), a thermal initiator (E) and a solvent (F). The photosensitive resin composition added with the ortho-naphthoquinone diazide sulfonic acid ester (D) and the thermal initiator (E) can have excellent resolution and development adherence. Moreover, the present invention further provides a spacer or a protective film formed by the aforementioned photosensitive resin composition, as well as a liquid crystal display device (LCD) including the aforementioned spacer or protective film.
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: March 17, 2015
    Assignee: Chi Mei Corporation
    Inventors: I-Chun Hsieh, Hao-Wei Liao
  • Publication number: 20140175347
    Abstract: The present invention relates to a photosensitive resin composition for black matrix, as well as a color filter and a liquid crystal display (LCD) device formed by the composition. The aforementioned photosensitive resin composition comprises an alkali-soluble resin (A), a compound containing vinyl unsaturated group(s) (B), a photo initiator (C), quinonediazide sulfonic acid ester (D), a solvent (E) and black pigment (F). The alkali-soluble resin (A) includes epoxy resin having unsaturated group(s) (A-1), which is obtained by reacting an epoxy resin (i) having at least two epoxy groups with a compound (ii) having at least one vinyl unsaturated group and carboxyl group. The aforementioned photo initiator (C) includes an O-acyloxime compound (C-1).
    Type: Application
    Filed: December 16, 2013
    Publication date: June 26, 2014
    Applicant: CHI MEI CORPORATION
    Inventors: Hao-Wei LIAO, I-Chun HSIEH
  • Publication number: 20140051017
    Abstract: The present invention relates to a photosensitive resin composition, which comprises an alkali-soluble resin (A), a compound (B) containing vinyl unsaturated group(s), a photoinitiator (C), ortho-naphthoquinone diazide sulfonic acid ester (D), a thermal initiator (E) and a solvent (F). The photosensitive resin composition added with the ortho-naphthoquinone diazide sulfonic acid ester (D) and the thermal initiator (E) can have excellent resolution and development adherence. Moreover, the present invention further provides a spacer or a protective film formed by the aforementioned photosensitive resin composition, as well as a liquid crystal display device (LCD) including the aforementioned spacer or protective film.
    Type: Application
    Filed: August 1, 2013
    Publication date: February 20, 2014
    Applicant: CHI MEI CORPORATION
    Inventors: I-Chun HSIEH, Hao-Wei LIAO