Abstract: A die bonding tool having a tool head including a plurality of openings fluidly coupled to a vacuum source to selectively secure a semiconductor die onto the tool head via the application of a suction force. The plurality of openings have non-uniform cross-sectional areas, including one or more first openings having a first cross-sectional area and one or more second openings having a second cross-sectional area that is greater than the first cross-section area. A first minimum offset distance between each of the first openings and any peripheral edge of the tool head is less than a second minimum offset distance between each of the second openings and any peripheral edge of the tool head. The configuration of the openings in the tool head may improve bonding of the semiconductor die to a substrate by inhibiting air becoming trapped between the semiconductor die and the substrate during the bonding process.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.