Patents by Inventor I-Chung Deng

I-Chung Deng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Production of a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal
    Patent number: 6194295
    Abstract: Provided a process for producing a refractory metal by chemical vapor deposition of a bilayer-stacked tungsten metal by depositing a bilayer-stacked tungsten metal in a same chamber in the manner of not breaking the vacuum therein. Firstly, a layer of amorphous-like tungsten is deposited to increase thermal stability and to prevent diffusion of fluorine atom. Next, a nitridizing treatment is performed thereon to promote further the barrier property and thermal stability of the amorphous-like tungsten. Finally, conventional selective chemical vapor deposited tungsten having low is deposited on the amorphous-like tungsten. Through the deposition of bilayer tungsten according to the process of the invention, thermal stability of conventional selective chemical vapor deposited tungsten can be increased greatly.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: February 27, 2001
    Assignee: National Science Council of Republic of China
    Inventors: Kow-Ming Chang, I-Chung Deng, Ta-Hsun Yeh