Abstract: Provided is a method of fabricating a MOS device including the following steps. A gate structure is formed on a substrate and a first spacer is formed at a sidewall of the gate structure. A first implant process is performed to form source and drain extension regions in the substrate. A spacer material layer is formed on the gate structure, the first spacer and the substrate. A treatment process is performed so that stress from the spacer material layer is applied onto and memorized in a channel between two source and drain extension regions. An anisotropic process is performed to remove a portion of the spacer material so that a second spacer is formed. A second implant process is performed to form source and drain regions in the substrate.

Abstract: A method for fabricating a semiconductor device is described. A semiconductor substrate is provided, wherein the substrate has a first area and a second area. A first gate structure and a second gate structure are formed over the substrate in the first area and the substrate in the second area, respectively. A first spacer is framed on the sidewall of each gate structure. At least one etching process including at least one wet etching process is performed. The first spacer is removed. A second spacer is formed on the sidewall of each gate structure. A mask layer is formed in the second area. Ion implantation is formed using the mask layer, the first gate structure and the second spacer as a mask to form S/D extensions in the substrate beside the first gate structure in the first area. The mask layer is then removed.

Abstract: Provided is a method of fabricating a MOS device including the following steps. A gate structure is formed on a substrate and a first spacer is formed at a sidewall of the gate structure. A first implant process is performed to form source and drain extension regions in the substrate. A spacer material layer is formed on the gate structure, the first spacer and the substrate. A treatment process is performed so that stress form the spacer material layer is applied onto and memorized in a channel between two source and drain extension regions. An anisotropic process is performed to remove a portion of the spacer material so that a second spacer is formed. A second implant process is performed to form source and drain regions in the substrate.