Abstract: A semiconductor fabrication method is provided for fabricating a resistor and a capacitor electrode in an integrated circuit, which can help enhance the quality of the resultant integrated circuit. In this method, the first step is to form a polysilicon layer. Then, optionally, a first oxide layer is formed over the polysilicon layer. Next, a first ion-implantation process is performed on the entire polysilicon layer so as to convert it into a lightly-doped polysilicon layer with a first predefined impurity concentration. After this, a second ion-implantation process is performed solely on the predefined electrode part of the polysilicon layer so as to convert this part into a heavily-doped polysilicon layer with a second predefined impurity concentration higher than the first impurity concentration. Subsequently, a selective removal process is performed to remove selected parts of the lightly-doped part and the heavily-doped part of the polysilicon layer.

Abstract: A semiconductor fabrication method is provided for fabricating a resistor and a capacitor electrode in an integrated circuit, which can help enhance the quality of the resultant integrated circuit. In this method, the first step is to form a polysilicon layer. Then, optionally, a first oxide layer is formed over the polysilicon layer. Next, a first ion-implantation process is performed on the entire polysilicon layer so as to convert it into a lightly-doped polysilicon layer with a first predefined impurity concentration. After this, a second ion-implantation process is performed solely on the predefined electrode part of the polysilicon layer so as to convert this part into a heavily-doped polysilicon layer with a second predefined impurity concentration higher than the first impurity concentration. Subsequently, a selective removal process is performed to remove selected parts of the lightly-doped part and the heavily-doped part of the polysilicon layer.

Abstract: An injector for water free of external torch external torch gas injector comprising an outer tube, a first inner tube and a second inner tube. The outer tube has a side tube and a plurality of outer tube emission holes. The outer wall of the outer tube joins with a ball-and-socket joint. The plurality of outer tube emission holes is at the front end of the outer tube. The outer tube encloses the first inner tube. The first inner tube has a side tube and an inner tube emission hole. The inner tube emission hole is also at the front end of the outer tube. The outer tube also encloses the second inner tube. The second inner tube has an inner tube inlet and an inner tube emission hole. The second inner tube inlet is at the back end of the outer tube. The second inner tube emission hole is on the wall of the outer tube, near the largest cross-section of the ball-and-socket joint.