Abstract: A forming operation of resistive memory device is provided. The operation includes: applying a pre-forming gate voltage and a pre-forming bit line voltage to a target memory cell; performing a dense switching forming operation, wherein the dense switching forming operation includes alternately performing dense set operations and dense reset operations on the target memory cell, wherein the dense set operation includes applying a dense switching gate voltage and a dense set bit line voltage; and performing a normal set operation on the target memory cell, wherein the normal set operation includes applying a normal set gate voltage and a normal set bit line voltage to the target memory cell, the normal set gate voltage is greater than the pre-forming gate voltage and the dense switching gate voltage, and the normal set bit line voltage is less than the pre-forming bit line voltage and the dense set bit line voltage.

Abstract: Processes and systems for thermoforming articles of wear are disclosed. The process can include utilizing a negative pressure generation system to seal an article in a forming material thereby compressing the forming material onto the outer surface of the article. The process can also include exposing the sealed article to an increased temperature followed by exposure to a decrease temperature, while maintaining the compressive force of the forming material on the outer surface of the article. A positive pressure can also be applied to the sealed article while undergoing the heating and/or cooling steps, which can facilitate the removal of bubbles from the article during thermoforming as well as apply additional compressive force to the outer surface of the article.

Abstract: Processes and systems for thermoforming articles of wear are disclosed. The process can include utilizing a negative pressure generation system to seal an article in a forming material thereby compressing the forming material onto the outer surface of the article. The process can also include exposing the sealed article to an increased temperature followed by exposure to a decrease temperature, while maintaining the compressive force of the forming material on the outer surface of the article. A positive pressure can also be applied to the sealed article while undergoing the heating and/or cooling steps, which can facilitate the removal of bubbles from the article during thermoforming as well as apply additional compressive force to the outer surface of the article.

Abstract: An operating method of a resistive memory storage apparatus includes: applying a forming voltage to a memory cell and obtaining a cell current of the memory cell; and determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to a magnitude relationship between the cell current and a reference current. The memory cell to which the forming voltage is applied operates in a heavy forming mode and serves as a one-time programmable memory device.

Abstract: An operating method of a resistive memory storage apparatus includes: applying a forming voltage to a memory cell and obtaining a cell current of the memory cell; and determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to a magnitude relationship between the cell current and a reference current. The memory cell to which the forming voltage is applied operates in a heavy forming mode and serves as a one-time programmable memory device.

Abstract: A writing method of a resistive memory storage apparatus is provided. The writing method includes: applying a first set voltage on a memory cell, and acquiring a first reading current of the memory cell; applying a first disturbance voltage on the memory cell, and acquiring a second reading current of the memory cell; and determining to apply a second set voltage or a second disturbance voltage on the memory cell according to a magnitude relationship between the first reading current and the second reading current. An absolute value of the first disturbance voltage is smaller than an absolute value of a reset voltage, and an absolute value of the second disturbance voltage is smaller than an absolute value of the second set voltage. In addition, a resistive memory storage apparatus is also provided.

Abstract: Systems and processes for thermoforming an article are disclosed. The system can include a first heating station that can include a first heating zone and a second heating zone. The system can further include a first cooling station for reducing the temperature of the heated article to a range of about 50° C. to about 70° C. while exposing the article to atmospheric pressure. The system can also include a second cooling station that can expose an article to a pressure above atmospheric pressure.

Abstract: The disclosure provides a method for obtaining optimal operating condition of a resistive random access memory (RRAM). The method includes: retrieving an RRAM chip and performing a forming operation and an initial reset operation thereto based on a first operating condition; segmenting the RRAM chip into blocks; performing a set operation to each of the blocks based on various operating voltages; obtaining a fail bit value of each of the blocks; generating an operating characteristic curve related to the RRAM chip based on the fail bit value of each of the blocks and the operating voltages, wherein the operating characteristic curve has a lowest fail bit value and an operating voltage window; and when the lowest fail bit value and the operating voltage window satisfy a first condition and a second condition, respectively, determining the first operating condition is an optimal operating condition of the RRAM chip.

Abstract: A writing method of a resistive memory storage apparatus is provided. The writing method includes: applying a first set voltage on a memory cell, and acquiring a first reading current of the memory cell; applying a first disturbance voltage on the memory cell, and acquiring a second reading current of the memory cell; and determining to apply a second set voltage or a second disturbance voltage on the memory cell according to a magnitude relationship between the first reading current and the second reading current. An absolute value of the first disturbance voltage is smaller than an absolute value of a reset voltage, and an absolute value of the second disturbance voltage is smaller than an absolute value of the second set voltage. In addition, a resistive memory storage apparatus is also provided.

Abstract: A method for forming a memory device is provided. The method includes forming a plurality of memory cells. The method also includes performing a first baking on the memory cells. The method further includes setting a specified current, and after performing the first baking, performing a test process on the memory cells. The test process includes reading the current of the memory cells. When the read current of the memory cells is larger than or equal to the specified current, the test process of the memory cell is done. When the read current of the memory cells is smaller than the specified current, a re-forming process is performed on the memory cells to form a plurality of re-formed memory cells, and then the test process is performed on the re-formed memory cells.

Abstract: Processes and systems for thermoforming articles of wear are disclosed. The process can include utilizing a negative pressure generation system to seal an article in a forming material thereby compressing the forming material onto the outer surface of the article. The process can also include exposing the sealed article to an increased temperature followed by exposure to a decrease temperature, while maintaining the compressive force of the forming material on the outer surface of the article. A positive pressure can also be applied to the sealed article while undergoing the heating and/or cooling steps, which can facilitate the removal of bubbles from the article during thermoforming as well as apply additional compressive force to the outer surface of the article.

Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

Abstract: A memory-programming device includes a voltage generator, a resistive random-access memory, a current detector, and a controller. The voltage generator is configured to generate a program voltage. The resistive random-access memory receives the program voltage to generate a program current. The current detector detects the program current. The controller executes a program procedure. The program procedure includes: gradually ramping up the program voltage by the voltage generator and detecting the program current by the current detector; discovering the maximum of the program current to be a reference current; continuing to ramp up the program voltage by the voltage generator and determining whether the program current detected by the current detector is not less than the reference current; controlling the voltage generator to stop generating the program voltage when the program current is not less than the reference current.

Abstract: A memory-programming device includes a voltage generator, a resistive random-access memory, a current detector, and a controller. The voltage generator is configured to generate a program voltage. The resistive random-access memory receives the program voltage to generate a program current. The current detector detects the program current. The controller executes a program procedure. The program procedure includes: gradually ramping up the program voltage by the voltage generator and detecting the program current by the current detector; discovering the maximum of the program current to be a reference current; continuing to ramp up the program voltage by the voltage generator and determining whether the program current detected by the current detector is not less than the reference current; controlling the voltage generator to stop generating the program voltage when the program current is not less than the reference current.

Abstract: A measurement system including a testing machine and a resistive memory is provided. The resistive memory includes a first storage cell. The first storage cell includes a transistor and a variable resistor. During a specific period, the testing machine provides a write voltage to change the state of the variable resistor. During a maintaining period, the testing machine maintains the level of the write voltage and measures the current passing through the variable resistor. When the current passing through the variable resistor does not arrive at a pre-determined value, the testing machine increases the level of the write voltage. Furthermore, a resistive memory utilizing the testing machine is also provided.

Abstract: A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

Abstract: A measurement system including a testing machine and a resistive memory is provided. The resistive memory includes a first storage cell. The first storage cell includes a transistor and a variable resistor. During a specific period, the testing machine provides a write voltage to change the state of the variable resistor. During a maintaining period, the testing machine maintains the level of the write voltage and measures the current passing through the variable resistor. When the current passing through the variable resistor does not arrive at a pre-determined value, the testing machine increases the level of the write voltage. Furthermore, a resistive memory utilizing the testing machine is also provided.