Patents by Inventor I Hsuan Wei

I Hsuan Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240321725
    Abstract: A semiconductor structure including a substrate and a capacitor structure is provided. The capacitor structure is disposed above the substrate. The capacitor structure includes a first electrode layer, a second electrode layer, and a first dielectric layer. The second electrode layer is disposed on the first electrode layer. The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The first dielectric layer is a composite dielectric layer including at least one first silicon nitride layer and at least one first high-k dielectric layer.
    Type: Application
    Filed: June 14, 2023
    Publication date: September 26, 2024
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Michio Sakurai, Shou-Zen Chang, I Hsuan Wei, Wei-Lin Wang