Patents by Inventor I-Hsun Chen

I-Hsun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Common centroid symmetric structure capacitor
    Patent number: 7646583
    Abstract: A common centroid symmetric structure capacitor is provided, which includes a first metal layer, a second metal layer, a third metal layer, and a fourth metal layer. The first metal layer is adjacent to the second metal layer, the third metal layer is adjacent to the first metal layer, the fourth metal layer is adjacent to the second metal layer, and the first metal layer is symmetric to the fourth metal layer, the second metal layer is symmetric to the third metal layer. Each of the metal layers has two sets of metal wires, each set has a plurality of metal wires, and each of the metal wires in each set is arranged in an interlaced manner.
    Type: Grant
    Filed: June 4, 2007
    Date of Patent: January 12, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Szu-Kang Hsien, I-Hsun Chen, Chien-Hua Cheng
  • Face-centered cubic structure capacitor and method of fabricating the same
    Patent number: 7564675
    Abstract: A face-centered cubic structure capacitor is provided, which includes a first metal layer, a second metal layer, and a connection layer. The first metal layer comprises a plurality of first metal wires, a plurality of second metal wires, and a plurality of first metal blocks. The first and second metal wires are intercrossed with each other to form a grid structure, and each of the first metal blocks is disposed in each grid of the grid structure. The second metal layer comprises a plurality of third metal wires, a plurality of fourth metal wires, and a plurality of second metal blocks. The third and fourth metal wires are intercrossed with each other to form a grid structure, and each of the second metal blocks is disposed in each grid of the grid structure. The connection layer comprises a plurality of third metal blocks and a plurality of fourth metal blocks.
    Type: Grant
    Filed: May 17, 2007
    Date of Patent: July 21, 2009
    Assignee: Industrial Technology Research Institute
    Inventors: I-Hsun Chen, Szu-Kang Hsien
  • Common centroid symmetric structure capacitor
    Publication number: 20080158772
    Abstract: A common centroid symmetric structure capacitor is provided, which includes a first metal layer, a second metal layer, a third metal layer, and a fourth metal layer. The first metal layer is adjacent to the second metal layer, the third metal layer is adjacent to the first metal layer, the fourth metal layer is adjacent to the second metal layer, and the first metal layer is symmetric to the fourth metal layer, the second metal layer is symmetric to the third metal layer. Each of the metal layers has two sets of metal wires, each set has a plurality of metal wires, and each of the metal wires in each set is arranged in an interlaced manner.
    Type: Application
    Filed: June 4, 2007
    Publication date: July 3, 2008
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Szu-Kang Hsien, I-Hsun Chen, Chien-Hua Cheng
  • Face-centered cubic structure capacitor and method of fabricating the same
    Publication number: 20080158776
    Abstract: A face-centered cubic structure capacitor is provided, which includes a first metal layer, a second metal layer, and a connection layer. The first metal layer comprises a plurality of first metal wires, a plurality of second metal wires, and a plurality of first metal blocks. The first and second metal wires are intercrossed with each other to form a grid structure, and each of the first metal blocks is disposed in each grid of the grid structure. The second metal layer comprises a plurality of third metal wires, a plurality of fourth metal wires, and a plurality of second metal blocks. The third and fourth metal wires are intercrossed with each other to form a grid structure, and each of the second metal blocks is disposed in each grid of the grid structure. The connection layer comprises a plurality of third metal blocks and a plurality of fourth metal blocks.
    Type: Application
    Filed: May 17, 2007
    Publication date: July 3, 2008
    Inventors: I-Hsun Chen, Szu-Kang Hsien