Abstract: A semiconductor device includes a substrate, an initial layer, and a superlattice stack. The initial layer is located on the substrate and includes aluminum nitride (AlN). The superlattice stack is located on the initial layer and includes a plurality of first films, a plurality of second films and at least one doped layer, and the first films and the second films are alternately stacked on the initial layer, wherein the at least one doped layer is arranged in one of the first films and the second films, and dopants of the at least one doped layer are selected from a group consisting of carbon, iron, and the combination thereof.

Abstract: A semiconductor device and method of fabricating the same include a substrate, a first epitaxial layer, a first protection layer, and a contact etching stop layer. The substrate includes a PMOS transistor region, and the first epitaxial layer is disposed on the substrate, within the PMOS transistor region. The first protection layer is disposed on the first epitaxial layer, covering surfaces of the first epitaxial layer. The contact etching stop layer is disposed on the first protection layer and the substrate, wherein a portion of the first protection layer is exposed from the contact etching stop layer.

Abstract: The present invention provides a floater structure. The floater structure is used for bearing the tower of wind turbines, especially for the offshore wind turbines. The floater structure is constructed via a main column, two off columns and a pontoon. The off column is connected to any other main column and the off column via a horizontal bracing, and the pontoon is connected to the main column and the two off columns. The shape of the pontoon is triangle, and three corners of the triangle are round corners, polygon corners, or the combinations thereof.

Abstract: The present invention provides an optical method for predicting treatment response, survival and recurrence of esophageal cancer patients, comprising analyzing the spectral signatures of patient's tumor tissue spectra. By the features of the present invention, the prediction result achieves the sensitivity of 75% and specificity of 73.3% in concurrent chemoradiotherapy (CCRT) response; the survival prediction rate achieves the sensitivity of 100%; the recurrence prediction rate achieves the sensitivity of 85.7%.

Abstract: The present invention provides an optical method for predicting treatment response, survival and recurrence of esophageal cancer patients, comprising analyzing the spectral signatures of patient's tumor tissue spectra. By the features of the present invention, the prediction result achieves the sensitivity of 75% and specificity of 73.3% in concurrent chemoradiotherapy (CCRT) response; the survival prediction rate achieves the sensitivity of 100%; the recurrence prediction rate achieves the sensitivity of 85.7%.

Abstract: A miniature scan-free optical tomography system is provided. The system includes a broadband light source. A detection device is composed without a grating in front of it. A beamsplitter splits a light beam emitted from the broadband light source into a first reference light beam and a first sample light beam. An optical delay device including a fixed single curved reflecting surface reflects the first reference light beam into a second reference light beam having different optical path lengths only along a first dimension. The second reference light beam is incident through the beamsplitter to the detection device. A focusing device focuses the first sample light beam only along a third dimension. A second sample light beam reflected from the sample is incident to the detection device. Different portions of the second reference light beam along the first dimension have different optical path lengths.

Abstract: The present invention provides an imaging and measuring apparatus for the surface and the internal interface of an object, which comprises a broadband wave source, a wave-splitting structure, a wave-delaying device, a reflecting component, and a sensor. The broadband wave source transmits a broadband incident wave. The wave-splitting structure splits the broadband incident wave into a first incident beam, a second incident beam, and a third incident beam. The first incident beam is illuminated on an object under test, which reflects a measuring beam. The wave-delaying device receives the second incident beam and reflects a reference beam. The reflecting component receives the third incident beam and reflects a calibration beam. The sensor receives a first interference signal of the measuring beam and the reference beam, and a second interference signal of the reference beam and the calibration beam.

Abstract: An optical tomography system is provided. The optical tomography system includes a light source emitting a light beam. A beamsplitter splits the light beam into a first reference light beam and a first sample light beam. The first reference light beam is incident to an optical delay device, and the first sample light beam is incident to a focusing device, focused to a sample. A second reference light beam reflected from the optical delay device and a second sample light beam reflected from the sample are incident through the beamsplitter to a detection device. Different portions of the second reference light beam along a first dimension have different optical path lengths.

Abstract: The present invention provides an imaging and measuring apparatus for the surface and the internal interface of an object, which comprises a broadband wave source, a wave-splitting structure, a wave-delaying device, a reflecting component, and a sensor. The broadband wave source transmits a broadband incident wave. The wave-splitting structure splits the broadband incident wave into a first incident beam, a second incident beam, and a third incident beam. The first incident beam is illuminated on an object under test, which reflects a measuring beam. The wave-delaying device receives the second incident beam and reflects a reference beam. The reflecting component receives the third incident beam and reflects a calibration beam. The sensor receives a first interference signal of the measuring beam and the reference beam, and a second interference signal of the reference beam and the calibration beam.

Abstract: A system and method for measuring interferences are disclosed. The system is based on the concept of a composite interferometer. The sample is measured while a simultaneous compensation of the phase deviation due to the relative displacement of the optical delay component between the measurements at different pixels of the sample is performed. In the application of profilometry, the information of the surface profile of a material is obtained from the phase shift of the interference signal. By using the proposed compensation mechanism, an axial resolution at nanometer scale can be achieved. For the measurement of a thin film, a polarized probe beam is oblique incident on the sample. The system can perform a simultaneous measurement of the refractive index and the thickness of the thin film. From the ratio of the intensities of the interferograms of TE and TM waves as well as the phase shifts of the interferograms, the refractive index and the thickness of the thin film can then be obtained simultaneously.

Abstract: This invention provides a system and a method of the optical delay line, wherein the system comprises a source and an array of mirrors, wherein the array of mirrors comprises a first reflective mirror, a second reflective mirror, a third reflective mirror, and a fourth reflective mirror. Beams from the source could be delayed because the beams are multi-reflected by the reflective mirrors.

Abstract: A system and method for measuring interferences are disclosed. The system is based on the concept of a composite interferometer. The sample is measured while a simultaneous compensation of the phase deviation due to the relative displacement of the optical delay component between the measurements at different pixels of the sample is performed. In the application of profilometry, the information of the surface profile of a material is obtained from the phase shift of the interference signal. By using the proposed compensation mechanism, an axial resolution at nanometer scale can be achieved. For the measurement of a thin film, a polarized probe beam is oblique incident on the sample. The system can perform a simultaneous measurement of the refractive index and the thickness of the thin film. From the ratio of the intensities of the interferograms of TE and TM waves as well as the phase shifts of the interferograms, the refractive index and the thickness of the thin film can then be obtained simultaneously.

Abstract: This invention provides a system and a method of the optical delay line, wherein the system comprises a source and an array of mirrors, wherein the array of mirrors comprises a first reflective mirror, a second reflective mirror, a third reflective mirror, and a fourth reflective mirror. Beams from the source could be delayed because the beams are multi-reflected by the reflective mirrors.