Abstract: A method for manufacturing an indium gallium nitride quantum well is disclosed. The method includes providing a substrate in a process chamber, with the substrate including a gallium nitride layer. Having the process chamber reach a process vacuum. Providing a nitrogen molecular beam in plasma state, an indium molecular beam and an aluminum molecular beam into the process chamber simultaneously, controlling a flow rate ratio of the indium molecular beam to the aluminum molecular beam, and forming an indium aluminum nitride film on the gallium nitride layer, with the flow rate ratio being 0.6, 1.0, 1.29, 1.67 or 3.0. Forming an indium gallium nitride quantum well on the indium aluminum nitride film.

Abstract: A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.

Abstract: A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.

Abstract: This invention discloses a light emitting element to solve the problem of lattice mismatch and inequality of electron holes and electrons of the conventional light emitting elements. The light emitting element comprises a gallium nitride layer, a gallium nitride pyramid, an insulating layer, a first electrode and a second electrode. The gallium nitride pyramid contacts with the gallium nitride layer, with a c-axis of the gallium nitride layer opposite in direction to a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, with broken bonds at the mounting face of the gallium nitride layer and the larger end face of the gallium nitride pyramid welded with each other, with the gallium nitride layer and the gallium nitride pyramid being used as a p-type semiconductor and an n-type semiconductor respectively.

Abstract: An III-nitride epitaxial structure and a method for manufacturing the same are disclosed. The III-nitride epitaxial structure includes a gallium nitride layer, an indium gallium nitride layer, and an indium nitride layer. The gallium nitride layer includes an M-plane gallium nitride surrounding a c-plane gallium nitride thereof. The indium gallium nitride layer is arranged on the gallium nitride layer. The indium gallium nitride layer includes an M-plane indium gallium nitride surrounding a c-plane indium gallium nitride thereof. The indium nitride layer is arranged on the indium gallium nitride layer. The indium nitride layer includes an M-plane indium nitride surrounding a c-plane indium nitride thereof. The c-plane gallium nitride, the c-plane indium gallium nitride, and the c-plane indium nitride are stacked each other to form a neck portion that is connected to a thin c-plane indium nitride disk which is spaced from the M-plane indium nitride by a gap.

Abstract: This invention discloses a light emitting element to solve the problem of lattice mismatch and inequality of electron holes and electrons of the conventional light emitting elements. The light emitting element comprises a gallium nitride layer, a gallium nitride pyramid, an insulating layer, a first electrode and a second electrode. The gallium nitride pyramid contacts with the gallium nitride layer, with a c-axis of the gallium nitride layer opposite in direction to a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, with broken bonds at the mounting face of the gallium nitride layer and the larger end face of the gallium nitride pyramid welded with each other, with the gallium nitride layer and the gallium nitride pyramid being used as a p-type semiconductor and an n-type semiconductor respectively.

Abstract: An III-nitride epitaxial structure and a method for manufacturing the same are disclosed. The III-nitride epitaxial structure includes a gallium nitride layer, an indium gallium nitride layer, and an indium nitride layer. The gallium nitride layer includes an M-plane gallium nitride surrounding a c-plane gallium nitride thereof. The indium gallium nitride layer is arranged on the gallium nitride layer. The indium gallium nitride layer includes an M-plane indium gallium nitride surrounding a c-plane indium gallium nitride thereof. The indium nitride layer is arranged on the indium gallium nitride layer. The indium nitride layer includes an M-plane indium nitride surrounding a c-plane indium nitride thereof. The c-plane gallium nitride, the c-plane indium gallium nitride, and the c-plane indium nitride are stacked each other to form a neck portion that is connected to a thin c-plane indium nitride disk which is spaced from the M-plane indium nitride by a gap.

Abstract: The present disclosure provides a fabrication of M-plane gallium nitride which is able to grow M-plane gallium nitride without the need of expensive substrates, such as LiAlO2, LiGaO2 or SiC. The fabrication of M-plane gallium nitride includes preparing a zinc oxide hexagonal prism having a growth face, and growing a gallium nitride layer on the growth face of the zinc oxide hexagonal prism. The growth face is an M-plane perpendicular to a direction of gravity.

Abstract: A method for manufacturing a light emitting element is disclosed. A larger end face of a gallium nitride pyramid contacts with a mounting face of a gallium nitride layer disposed on a substrate, with c-axes of the gallium nitride layer and the gallium nitride pyramid coaxial to each other, and with M-planes of the gallium nitride layer and the gallium nitride pyramid parallel to each other. Broken bonds at contact faces of the gallium nitride pyramid and of the gallium nitride layer weld with each other after heating and cooling. A portion of an insulating layer coated on the gallium nitride pyramid and is removed to form an electrically conductive portion on which a first electrode is disposed. A portion of the insulating layer coated on the gallium nitride layer is removed to form another electrically conductive portion on which a second electrode is disposed.

Abstract: A light emitting element and its manufacturing method are disclosed. A larger end face of a gallium nitride pyramid contacts with a mounting face of a gallium nitride layer disposed on a substrate, with c-axes of the gallium nitride layer and the gallium nitride pyramid coaxial to each other, and with M-planes of the gallium nitride layer and the gallium nitride pyramid parallel to each other. Broken bonds at contact faces of the gallium nitride pyramid and of the gallium nitride layer weld with each other after heating and cooling. A portion of an insulating layer coated on the gallium nitride pyramid and is removed to form an electrically conductive portion on which a first electrode is disposed. A portion of the insulating layer coated on the gallium nitride layer is removed to form another electrically conductive portion on which a second electrode is disposed.

Abstract: An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Abstract: A stacking structure of a light-emitting device is disclosed. The stacking structure of the light-emitting device includes a substrate, a first semiconductor layer, a second semiconductor layer, a conducting layer, and two electrodes. The substrate is essentially made of a light-permeable, non-metallic material. The first semiconductor layer is arranged on the substrate and essentially made of a ternary compound with chalcopyrite phase. The second semiconductor layer is arranged on the first semiconductor layer. The conducting layer is arranged on the second semiconductor layer and essentially made of a light-permeable semiconducting material different from the material of the substrate. The two electrodes are respectively arranged on the substrate and the conducting layer. Thus, the problem of having difficulty in emitting the light outwards from the side of the light-emitting diode adjacent to the substrate, as commonly seen in the conventional light-emitting device, is overcome.

Abstract: An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Abstract: A stacking structure of a photoelectric device includes a base, a first conducting layer, a first semiconductor layer, a second semiconductor layer, a second conducting layer and two electrodes. The base is essentially made of a light-permeable material. The first conducting layer is arranged on the base and essentially made of a light-permeable, non-metal material. The first semiconductor layer is arranged on the first conducting layer and essentially made of a ternary compound with chalcopyrite phase. The second semiconductor layer is arranged on the first semiconductor layer. The second conducting layer is arranged on the second semiconductor layer and essentially made of a light-permeable semiconductor material different from the light-permeable, non-metal material of the first conducting layer. The two electrodes are respectively arranged on the first and second conducting layers.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.

Abstract: A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.

Abstract: A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.