Patents by Inventor I-Li CHEN

I-Li CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210193517
    Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
    Type: Application
    Filed: March 8, 2021
    Publication date: June 24, 2021
    Inventors: Pin-Wen Chen, Chia-Han Lai, Chih-Wei Chang, Mei-Hui Fu, Ming-Hsing Tsai, Wei-Jung Lin, Yu-Shih Wang, Ya-Yi Cheng, I-Li Chen
  • Patent number: 10943823
    Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: March 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Pin-Wen Chen, Chia-Han Lai, Chih-Wei Chang, Mei-Hui Fu, Ming-Hsing Tsai, Wei-Jung Lin, Yu Shih Shih Wang, Ya-Yi Cheng, I-Li Chen
  • Publication number: 20200343135
    Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas. A second metallic feature is deposited in the opening.
    Type: Application
    Filed: April 23, 2019
    Publication date: October 29, 2020
    Inventors: Chun-Hsien Huang, I-Li Chen, Pin-Wen Chen, Yuan-Chen Hsu, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20200343087
    Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.
    Type: Application
    Filed: July 13, 2020
    Publication date: October 29, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Ting Lin, Chen-Yuan Kao, Rueijer Lin, Yu-Sheng Wang, I-Li Chen, Hong-Ming Wu
  • Patent number: 10714329
    Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.
    Type: Grant
    Filed: September 28, 2018
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Ting Lin, Chen-Yuan Kao, Rueijer Lin, Yu-Sheng Wang, I-Li Chen, Hong-Ming Wu
  • Publication number: 20200105519
    Abstract: The present disclosure describes a method that includes forming a dielectric layer over a contact region on a substrate; etching the dielectric layer to form a contact opening to expose the contact region; and pre-cleaning the exposed contact region to remove a residual material formed by the etching. During the pre-cleaning, the first contact region is exposed to an inductively coupled radio frequency (RF) plasma. Also, during the pre-cleaning, a direct current power supply unit (DC PSU) provides a bias voltage to the substrate and a magnetic field is applied to the inductively coupled RF plasma to collimate ions.
    Type: Application
    Filed: September 28, 2018
    Publication date: April 2, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Ting LIN, Chen-Yuan KAO, Rueijer LIN, Yu-Sheng WANG, I-Li CHEN, Hong-Ming WU
  • Publication number: 20200051858
    Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
    Type: Application
    Filed: October 16, 2019
    Publication date: February 13, 2020
    Inventors: Pin-Wen Chen, Chia-Han Lai, Chih-Wei Chang, Mei-Hui Fu, Ming-Hsing Tsai, Wei-Jung Lin, Yu Shih Shih Wang, Ya-Yi Cheng, I-Li Chen
  • Patent number: 10475702
    Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: November 12, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Pin-Wen Chen, Chia-Han Lai, Chih-Wei Chang, Mei-Hui Fu, Ming-Hsing Tsai, Wei-Jung Lin, Yu Shih Wang, Ya-Yi Cheng, I-Li Chen
  • Publication number: 20190287851
    Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
    Type: Application
    Filed: March 14, 2018
    Publication date: September 19, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Pin-Wen CHEN, Chia-Han LAI, Chih-Wei CHANG, Mei-Hui FU, Ming-Hsing TSAI, Wei-Jung LIN, Yu Shih WANG, Ya-Yi CHENG, I-Li CHEN