Abstract: A semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. At least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. The first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. The third dopant species forms a plurality of second dipole elements having a second polarity. A first concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the p-type transistor is different from a second concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the n-type transistor.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a gate opening on the fin structure, forming a metallic oxide layer within the gate opening, forming a first dielectric layer on the metallic oxide layer, forming a second dielectric layer on the first dielectric layer, forming a work function metal (WFM) layer on the second dielectric layer, and forming a gate metal fill layer on the WFM layer. The forming the first dielectric layer includes depositing an oxide material with an oxygen areal density less than an oxygen areal density of the metallic oxide layer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first source/drain epitaxial feature formed over a substrate, a second source/drain epitaxial feature formed over the substrate, two or more semiconductor layers disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a gate electrode layer surrounding a portion of one of the two or more semiconductor layers, a first dielectric region disposed in the substrate and in contact with a first side of the first source/drain epitaxial feature, and a second dielectric region disposed in the substrate and in contact with a first side of the second source/drain epitaxial feature, the second dielectric region being separated from the first dielectric region by a substrate.

Abstract: A chrome-free corrosion inhibitor composition includes: titanium chloride; a stabilizer including a mixture of hydrogen peroxide and at least a compound selected from nitric acid, persulfate, nitrate, and chlorate; and a film-forming enhancer selected from monosaccharide, oligosaccharide, polysaccharide, derivatives of saccharide, and combinations thereof.

Abstract: A chrome-free corrosion inhibitor composition includes: titanium chloride; a stabilizer including a mixture of hydrogen peroxide and at least a compound selected from nitric acid, persulfate, nitrate, and chlorate; and a film-forming enhancer selected from monosaccharide, oligosaccharide, polysaccharide, derivatives of saccharide, and combinations thereof.

Abstract: A continuous casting apparatus includes a housing, a vacuum unit connected to the housing, a furnace unit disposed in the housing and adapted to receive and heat a solid metal into a molten metal, an agitating gas supply unit adapted to supply an inert gas to the furnace unit to agitate the molten metal, a casting mold connected to a bottom end of the furnace unit and extending outwardly from the housing, a protective gas supply unit connected to an inner space of the housing, a cooling unit surrounding the casting mold and adapted to cool the molten metal that flows through a downward passage of the casting mold, and a drawing unit disposed below the casting mold and adapted to draw continuously a solid metal cast by the casting mold.

Abstract: A method for producing a metal alloy includes the steps of: (A) preparing a first melt containing a base metal which has not been alloyed; (B) preparing a second melt containing a base metal and at least one alloying element, the base metals in the first and second melts being the same; and (C) mixing the first and second melts to dilute the concentration of the alloying element.