Abstract: A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.

Abstract: A baseball pitch-training apparatus includes a first-sampling region, second-sampling region, and a microprocessor. The first sampling region further includes a plurality of vertical and horizontal sampling units respectively along the vertical direction and the horizontal direction at the front edge of the home plate. The second sampling region is located in the rear of the first sampling region and also includes a plurality of vertical and horizontal sampling units. The sampling units of the present invention are used to generate position signals of a passing ball that will be forwarded to the microprocessor for further parsing the speed and the trajectory variation of a pitched ball, and determining whether or not the ball passed a strike region.