Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate, the fin having a first width and a first height after the forming; forming a dummy gate stack over a channel region of the fin; growing an epitaxial source/drain in the fin adjacent the channel region; and after growing the epitaxial source/drain, replacing the dummy gate stack with a metal gate stack, the channel region of the fin having the first width and the first height before the replacing, the channel region of the fin having a second width and a second height after the replacing, the second width being less than the first width, the second height being less than the first height.

Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: An antenna module includes a first antenna radiator including a feeding terminal, a second antenna radiator, a first ground radiator, a second ground radiator and a capacitive element. The second antenna radiator is disposed on one side of the first antenna radiator, and a first gap is formed between a main portion of the second antenna radiator and the first antenna radiator. The first ground radiator is disposed on another side of the first antenna radiator, and a second gap is formed between the first antenna radiator and the first antenna radiator. The second ground radiator is disposed between the second antenna radiator and the first ground radiator, and a third gap is formed between the second ground radiator and a first branch of the second antenna radiator. The capacitive element is disposed on the third gap and connects the second antenna radiator and the second ground radiator.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A fusion protein including a phage tail-spike protein ?AB6TSP and a signal indicator is provided. Also, a method of detecting bacteria having pseudaminic acid (Pse) is provided, including steps of contacting a sample with a phage tail-spike protein ?DAB6TSP; and detecting a signal from the sample. The fusion protein and the method of detecting bacteria can be applied to a set of practical diagnosis and therapeutic alternative against Pse-coated antibiotic resistant pathogenic bacteria.

Abstract: Disclosed herein is a glycoconjugate vaccine conferring protection against a Gram negative pathogen infection, a method of manufacturing the glycoconjugate vaccine, and use of the glycoconjugate vaccine for treating bacterial infection. The glycoconjugate vaccine of the present disclosure has the structure of formula (I), wherein, L is a maleimide-type linker, which is connected to the carrier protein via a maleimide bond formed therebetween; and n and m are independently an integral or a non-integral number between 2 and 20.

Abstract: Disclosed herein is a glycocojugate vaccine conferring protection against a Gram negative pathogen infection, a method of manufacturing the glycoconjugate vaccine, and use of the glycocojugate vaccine for treating bacterial infection. The glycocojugate vaccine of the present disclosure has the structure of formula (I), wherein, L is a maleimide-type linker, which is connected to the carrier protein via a maleimide bond formed therebetween; and n and m are respectively an integral or a non-integral number between 2 and 20.

Abstract: An improved structure manual tensioner. The tensioner includes a primary member having a narrow plate shaped into a pair of large and small parallel support arms. The large parallel support arm has a cylindrical handle formed contiguous to its free end and a protruding tab with a catch hole and a rivet hole are disposed in the parallel section of its surface to provide for the assembly to the small parallel support arm, thereby enabling the saving of both material and space, while also providing for extremely comfortable manual grasping in a simple structure that prevents slippage. As such, the fabrication procedures of the present invention are simple and convenient, assembly and installation efficiency is increased, and the spindle and the secondary member are structurally straightforward and not difficult to produce.

Abstract: An improved structure manual tensioner in which: the primary member consists of a narrow plate of greater and lesser dimensions shaped into a pair of large and small parallel support arms. The large parallel support arm has a cylindrical handle formed contiguous to its free end and a protruding tab with a catch hole and a rivet hole are disposed in the parallel section of its surface to provide for the assembly to the small parallel support arm, thereby enabling the saving of both material and space, while also providing for extremely comfortable manual grasping in a simple structure that prevents slippage. As such, the fabrication procedures of the present invention are simple and convenient, assembly and installation efficiency is increased, and the spindle and the secondary member are structurally straightforward and not difficult to produce.