Patents by Inventor I-Ping Chen

I-Ping Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11541505
    Abstract: A polishing pad is provided. The polishing pad comprises a polishing layer and a metal-containing layer. The polishing layer has a polishing surface and a backside surface opposite to each other, wherein the backside surface has a plurality of cavities. The metal-containing layer is disposed on the backside surface of the polishing layer and fills into the cavities, wherein a first contact area is between the metal-containing layer and the backside surface of the polishing layer, and the first contact area is larger than the orthogonal projection area of the polishing layer.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: January 3, 2023
    Assignee: IV Technologies CO., Ltd.
    Inventors: Yu-Piao Wang, I-Ping Chen
  • Publication number: 20220023998
    Abstract: A polishing pad is provided. The polishing pad, suitable for a polishing process, includes a polishing layer, an adhesive layer and at least one heat storage material. The polishing layer has a polishing surface and a back surface opposite to each other. The adhesive layer is disposed on the back surface of the polishing layer. A region where the at least one heat storage material is disposed is located above the adhesive layer.
    Type: Application
    Filed: October 6, 2021
    Publication date: January 27, 2022
    Applicant: IV Technologies CO., Ltd.
    Inventors: Chin-Chih Chen, I-Ping Chen
  • Patent number: 10518386
    Abstract: A polishing pad is provided. The polishing pad, suitable for a polishing procedure using a slurry containing water, includes a polishing track region and a first reactant. The polishing track region includes a central region and a peripheral region surrounding the central region. The first reactant is disposed in the central region of the polishing track region, wherein the first reactant is able to react endothermically with the water in the slurry.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: December 31, 2019
    Assignee: IV Technologies CO., Ltd.
    Inventors: Yu-Piao Wang, I-Ping Chen
  • Publication number: 20190321936
    Abstract: A polishing pad is provided. The polishing pad comprises a polishing layer and a metal-containing layer. The polishing layer has a polishing surface and a backside surface opposite to each other, wherein the backside surface has a plurality of cavities. The metal-containing layer is disposed on the backside surface of the polishing layer and fills into the cavities, wherein a first contact area is between the metal-containing layer and the backside surface of the polishing layer, and the first contact area is larger than the orthogonal projection area of the polishing layer.
    Type: Application
    Filed: April 17, 2019
    Publication date: October 24, 2019
    Applicant: IV Technologies CO., Ltd.
    Inventors: Yu-Piao Wang, I-Ping Chen
  • Publication number: 20180281154
    Abstract: A polishing pad is provided. The polishing pad, suitable for a polishing process, includes a polishing layer, an adhesive layer and at least one heat storage material. The polishing layer has a polishing surface and a back surface opposite to each other. The adhesive layer is disposed on the back surface of the polishing layer. A region where the at least one heat storage material is disposed is located above the adhesive layer.
    Type: Application
    Filed: March 28, 2018
    Publication date: October 4, 2018
    Applicant: IV Technologies CO., Ltd.
    Inventors: Chin-Chih Chen, I-Ping Chen
  • Publication number: 20180161959
    Abstract: A polishing pad is provided. The polishing pad, suitable for a polishing procedure using a slurry containing water, includes a polishing track region and a first reactant. The polishing track region includes a central region and a peripheral region surrounding the central region. The first reactant is disposed in the central region of the polishing track region, wherein the first reactant is able to react endothermically with the water in the slurry.
    Type: Application
    Filed: December 8, 2017
    Publication date: June 14, 2018
    Applicant: IV Technologies CO., Ltd.
    Inventors: Yu-Piao Wang, I-Ping Chen