Patents by Inventor I-Ping Liu

I-Ping Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for fabricating the same
    Patent number: 11957064
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: April 9, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20240081157
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.
    Type: Application
    Filed: November 6, 2023
    Publication date: March 7, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20240074328
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicant: United Microelectronics Corp.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Bifacial light-harvesting dye-sensitized solar cell
    Patent number: 11309139
    Abstract: A bifacial light-harvesting dye-sensitized solar cell is provided and has: a first transparent substrate, a second transparent substrate, a working electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a counter electrode, a light-transmitting catalyst layer, and a liquid electrolyte. A photoelectric conversion efficiency of the dye-sensitized solar cell is improved by using a specific working electrode structure.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: April 19, 2022
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Yuh-Lang Lee, I-Ping Liu, Yu-Syuan Cho
  • BIFACIAL LIGHT-HARVESTING DYE-SENSITIZED SOLAR CELL
    Publication number: 20210082633
    Abstract: A bifacial light-harvesting dye-sensitized solar cell is provided and has: a first transparent substrate, a second transparent substrate, a working electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a counter electrode, a light-transmitting catalyst layer, and a liquid electrolyte. A photoelectric conversion efficiency of the dye-sensitized solar cell is improved by using a specific working electrode structure.
    Type: Application
    Filed: November 14, 2019
    Publication date: March 18, 2021
    Inventors: Yuh-Lang LEE, I-Ping LIU, Yu-Syuan CHO
  • GAS SENSOR WITH A ZINC-OXIDE NANOSTRUCTURE AND METHOD FOR PRODUCING THE SAME
    Publication number: 20110290003
    Abstract: A gas sensor includes a substrate; a seed layer positioned on the substrate; a zinc-oxide nanostructure formed on the seed layer; a metal nanoparticle formed on the zinc-oxide nanostructure; a first electrode positioned on the zinc-oxide nanostructure; and a second electrode positioned on the zinc-oxide nanostructure apart from the first electrode to electrically connect to the first electrode.
    Type: Application
    Filed: May 25, 2011
    Publication date: December 1, 2011
    Applicant: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Wen-Chau Liu, Huey-Ing Chen, Tai-You Chen, Tsung-Han Tsai, I-Ping Liu, Chi-Hsiang Hsu