Patents by Inventor I-Shi Wang

I-Shi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210050324
    Abstract: A method of aligning two wafers during a bonding process includes aligning a first wafer having a plurality of alignment markings with a second wafer having a plurality of alignment markings. The method further includes placing a plurality of flags between the first wafer and the second wafer. The method further includes detecting movement of the plurality of flags with respect to the first wafer and the second wafer using at least one sensor. The method further includes determining whether the wafers remain aligned within an alignment tolerance based on the detected movement of the plurality of flags relative to the first wafer and the second wafer.
    Type: Application
    Filed: November 4, 2020
    Publication date: February 18, 2021
    Inventors: Yun-Tai SHIH, Ching-Hou SU, Chyi-Tsong NI, I-Shi WANG, Jeng-Hao LIN, Kuan-Ming PAN, Jui-Mu CHO, Wun-Kai TSAI
  • Patent number: 10847490
    Abstract: An apparatus includes an alignment module configured to align a first wafer and a second wafer based on alignment markers on the first wafer and corresponding alignment markers on the second wafer. The apparatus further includes a flag placement module configured to insert a plurality of flags between the first wafer and the second wafer, a flag-out mechanism configured to simultaneously move the plurality of flags to a flag-out position, and a controller configured to determine whether the wafers remain aligned within an alignment tolerance based on an amount of time for each flag of the plurality of flags to reach the flag-out position.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: November 24, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yun-Tai Shih, Kuan-Ming Pan, Jeng-Hao Lin, I-Shi Wang, Jui-Mu Cho, Ching-Hou Su, Chyi-Tsong Ni, Wun-Kai Tsai
  • Publication number: 20200339413
    Abstract: A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.
    Type: Application
    Filed: July 13, 2020
    Publication date: October 29, 2020
    Inventors: Yu-Jui CHEN, I-Shi WANG, Ren-Dou LEE, Jen-Hao LIU
  • Patent number: 10759654
    Abstract: The present disclosure relates to a method for manufacturing a microelectromechanical systems (MEMS) package. The method comprises providing a CMOS IC including CMOS devices arranged within a CMOS substrate. The method further comprises forming and patterning a metal layer over the CMOS substrate to form an anti-stiction layer and a fixed electrode plate and forming a rough top surface for the anti-stiction layer. The method further comprises providing a MEMS IC comprising a moveable mass arranged within a recess of a MEMS substrate and bonding the CMOS IC to the MEMS IC to enclose a cavity between the moveable mass and the fixed electrode plate and the anti-stiction layer.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: September 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Jui Chen, I-Shi Wang, Ren-Dou Lee, Jen-Hao Liu
  • Publication number: 20200223689
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first wafer comprising a first face and a second face opposite the first face and having a plurality of predetermined die areas. A plurality of recesses are disposed in the first face of the first wafer. A first recess of the plurality of recesses extends in a direction substantially parallel to a first edge of at least one of the plurality of predetermined die areas and laterally surrounds the at least one of the plurality of predetermined die areas. A second wafer is bonded to the second face of the first wafer.
    Type: Application
    Filed: March 25, 2020
    Publication date: July 16, 2020
    Inventors: Chih-Hang Chang, I-Shi Wang, Jen-Hao Liu
  • Patent number: 10710872
    Abstract: A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.
    Type: Grant
    Filed: December 6, 2017
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Jui Chen, I-Shi Wang, Ren-Dou Lee, Jen-Hao Liu
  • Patent number: 10626010
    Abstract: A method for forming a semiconductor device structure is provided. The method includes receiving a first wafer having multiple predetermined die areas. The method also includes forming a recess in the first wafer, and the recess extends in a direction substantially parallel to an edge of one of the predetermined die areas. The method further includes receiving a second wafer. In addition, the method includes bonding the first wafer and the second wafer at an elevated temperature after the recess is formed.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: April 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hang Chang, I-Shi Wang, Jen-Hao Liu
  • Publication number: 20200024125
    Abstract: A microelectromechanical systems (MEMS) package with roughness for high quality anti-stiction is provided. A device substrate is arranged over a support device. The device substrate comprises a movable element with a lower surface that is rough and that is arranged within a cavity. A dielectric layer is arranged between the support device and the device substrate. The dielectric layer laterally encloses the cavity. An anti-stiction layer lines the lower surface of the movable element. A method for manufacturing the MEMS package is also provided.
    Type: Application
    Filed: April 17, 2019
    Publication date: January 23, 2020
    Inventors: Chih-Hang Chang, I-Shi Wang, Jen-Hao Liu
  • Publication number: 20190378813
    Abstract: An apparatus includes an alignment module configured to align a first wafer and a second wafer based on alignment markers on the first wafer and corresponding alignment markers on the second wafer. The apparatus further includes a flag placement module configured to insert a plurality of flags between the first wafer and the second wafer, a flag-out mechanism configured to simultaneously move the plurality of flags to a flag-out position, and a controller configured to determine whether the wafers remain aligned within an alignment tolerance based on an amount of time for each flag of the plurality of flags to reach the flag-out position.
    Type: Application
    Filed: August 21, 2019
    Publication date: December 12, 2019
    Inventors: Yun-Tai SHIH, Kuan-Ming PAN, Jeng-Hao LIN, I-Shi WANG, Jui-Mu CHO, Ching-Hou SU, Chyi-Tsong NI, Wun-Kai TSAI
  • Publication number: 20190312298
    Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.
    Type: Application
    Filed: June 24, 2019
    Publication date: October 10, 2019
    Inventors: Chyi-Tsong Ni, I-Shi Wang, Yi Hsun Chiu, Ching-Hou Su
  • Patent number: 10396054
    Abstract: An apparatus includes a bonding system configured to bond at least two wafers. The bonding system has a flag-out mechanism configured to remove a plurality of flags from an area between the at least two wafers. The apparatus also includes sensors configured to detect data related to a flag-out condition of the flags of the plurality of flag. The apparatus further includes at least one processor configured to receive inputs from the sensors, to calculate at least one value related to flag-out timing, and to drive a display indicating an alignment of the at least two wafers.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: August 27, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yun-Tai Shih, Kuan-Ming Pan, Jeng-Hao Lin, I-Shi Wang, Jui-Mu Cho, Ching-Hou Su, Chyi-Tsong Ni, Wun-Kai Tsai
  • Patent number: 10361449
    Abstract: The present disclosure provides an embodiment of an integrated structure that includes a first electrode of a first conductive material embedded in a first semiconductor substrate; a second electrode of a second conductive material embedded in a second semiconductor substrate; and a electrolyte disposed between the first and second electrodes. The first and second semiconductor substrates are bonded together through bonding pads such that the first and second electrodes are enclosed between the first and second semiconductor substrates. The second conductive material is different from the first conductive material.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: July 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Chyi-Tsong Ni, I-Shi Wang, Yi Hsun Chiu, Ching-Hou Su
  • Publication number: 20190164929
    Abstract: In an embodiment, a system includes: a circular frame comprising a first side and a second side opposite the first side, wherein the circular frame comprises an aperture formed therethrough; an insert disposed within the aperture; a first wafer disposed over the insert; a second wafer disposed over the first wafer, wherein both the first wafer and the second wafer are configured for eutectic bonding when heated; two clamps disposed on the first side along the circular frame, wherein the two clamps are configured to contact the second wafer at respective clamp locations; and a plurality of pieces configured to secure the insert within the aperture, the plurality of pieces comprising both fixed and flexible pieces, the plurality of pieces comprising two fixed pieces disposed respectively adjacent to the clamp locations along the second side of the circular frame.
    Type: Application
    Filed: November 28, 2018
    Publication date: May 30, 2019
    Inventors: Chih-Hang Chang, Richard Huang, I-Shi Wang, Yin-Tun Chou, Jen-Hao Liu
  • Publication number: 20190161344
    Abstract: A method for forming a semiconductor device structure is provided. The method includes receiving a first wafer having multiple predetermined die areas. The method also includes forming a recess in the first wafer, and the recess extends in a direction substantially parallel to an edge of one of the predetermined die areas. The method further includes receiving a second wafer. In addition, the method includes bonding the first wafer and the second wafer at an elevated temperature after the recess is formed.
    Type: Application
    Filed: September 6, 2018
    Publication date: May 30, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hang CHANG, I-Shi WANG, Jen-Hao LIU
  • Patent number: 10273141
    Abstract: A microelectromechanical systems (MEMS) package with roughness for high quality anti-stiction is provided. A device substrate is arranged over a support device. The device substrate comprises a movable element with a lower surface that is rough and that is arranged within a cavity. A dielectric layer is arranged between the support device and the device substrate. The dielectric layer laterally encloses the cavity. An anti-stiction layer lines the lower surface of the movable element. A method for manufacturing the MEMS package is also provided.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hang Chang, I-Shi Wang, Jen-Hao Liu
  • Publication number: 20190119099
    Abstract: The present disclosure relates to a method for manufacturing a microelectromechanical systems (MEMS) package. The method comprises providing a CMOS IC including CMOS devices arranged within a CMOS substrate. The method further comprises forming and patterning a metal layer over the CMOS substrate to form an anti-stiction layer and a fixed electrode plate and forming a rough top surface for the anti-stiction layer. The method further comprises providing a MEMS IC comprising a moveable mass arranged within a recess of a MEMS substrate and bonding the CMOS IC to the MEMS IC to enclose a cavity between the moveable mass and the fixed electrode plate and the anti-stiction layer.
    Type: Application
    Filed: December 21, 2018
    Publication date: April 25, 2019
    Inventors: Yu-Jui Chen, I-Shi Wang, Ren-Dou Lee, Jen-Hao Liu
  • Patent number: 10173886
    Abstract: The present disclosure relates to a MEMS package with a rough metal anti-stiction layer, to improve stiction characteristics, and an associated method of formation. In some embodiments, the MEMS package includes a MEMS IC bonded to a CMOS IC. The CMOS IC has a CMOS substrate and an interconnect structure disposed over the CMOS substrate. The interconnect structure includes a plurality of metal layers disposed within a plurality of dielectric layers. The MEMS IC is bonded to the CMOS IC, enclosing a cavity between the MEMS IC and the CMOS IC and a moveable mass arranged in the cavity. The MEMS package further includes an anti-stiction layer disposed under the moveable mass. The anti-stiction layer is made of metal and has a rough top surface.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: January 8, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Jui Chen, I-Shi Wang, Ren-Dou Lee, Jen-Hao Liu
  • Patent number: 10112826
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a recess in a first substrate and forming a dielectric layer on the first substrate and in the recess. The method also includes forming a second substrate on the dielectric layer and etching a portion of the second substrate to form a MEMS structure. The MEMS structure has a plurality of openings. The method further includes etching a portion of the dielectric layer to form a cavity below the openings.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: October 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hang Chang, Jen-Hao Liu, I-Shi Wang
  • Publication number: 20180179047
    Abstract: The present disclosure relates to a MEMS package with a rough metal anti-stiction layer, to improve stiction characteristics, and an associated method of formation. In some embodiments, the MEMS package includes a MEMS IC bonded to a CMOS IC. The CMOS IC has a CMOS substrate and an interconnect structure disposed over the CMOS substrate. The interconnect structure includes a plurality of metal layers disposed within a plurality of dielectric layers. The MEMS IC is bonded to the CMOS IC, enclosing a cavity between the MEMS IC and the CMOS IC and a moveable mass arranged in the cavity. The MEMS package further includes an anti-stiction layer disposed under the moveable mass. The anti-stiction layer is made of metal and has a rough top surface.
    Type: Application
    Filed: January 31, 2018
    Publication date: June 28, 2018
    Inventors: Yu-Jui Chen, I-Shi Wang, Ren-Dou Lee, Jen-Hao Liu
  • Publication number: 20180162720
    Abstract: A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.
    Type: Application
    Filed: December 6, 2017
    Publication date: June 14, 2018
    Inventors: Yu-Jui Cheng, I-Shi Wang, Ren-Dou Lee, Jen-Hao Liu