Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A method includes performing a chemical-mechanical planarization (CMP) on an article, providing a polishing fluid capable of transferring charges to the article, and detecting a current generated in response to the charges transferred to the article. An apparatus that is capable of performing the method and a system that includes the apparatus are also disclosed.

Abstract: A method includes performing a chemical-mechanical planarization (CMP) on an article, providing a polishing fluid including luminescent particles capable of generating a fluorescent light in response to a light incident on the article, and detecting an intensity of the fluorescent light. An apparatus that is capable of performing the method and a system that includes the apparatus are also disclosed.

Abstract: Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization on an article includes a polishing head configured to perform a chemical-mechanical planarization (CMP) on an article, a polishing pad configured to support the article, a light source configured to emit an incident light, a polishing fluid including a plurality of emitter particles capable of emitting a fluorescent light in response to the incident light, a fluorescence light detector configured to detect the fluorescent light, and at least one processor configured to control the polishing head based on the detected fluorescent light.

Abstract: A method includes performing a chemical-mechanical planarization (CMP) on an article, providing a polishing fluid capable of transferring charges to the article, and detecting a current generated in response to the charges transferred to the article. An apparatus that is capable of performing the method and a system that includes the apparatus are also disclosed.

Abstract: A method includes performing a chemical-mechanical planarization (CMP) on an article, providing a polishing fluid including luminescent particles capable of generating a fluorescent light in response to a light incident on the article, and detecting an intensity of the fluorescent light. An apparatus that is capable of performing the method and a system that includes the apparatus are also disclosed.

Abstract: Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization includes: a polishing pad configured to support an article for chemical-mechanical planarization (CMP), wherein the article includes a CMP stop material, a polishing head configured to perform chemical-mechanical planarization on the article, a light source configured to provide an incident light, a polishing fluid including a plurality of luminescent particles capable of emitting a fluorescent light in response to the incident light, a fluorescence detector configured to detect the intensity of the fluorescent light, and at least one processor coupled to the fluorescent detector and the polishing head, wherein the at least one processor is configured to control the polishing head based on the detected fluorescent light.

Abstract: Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system includes a polishing head, a polishing pad, a light source, a polishing fluid, a current detector, and one or more processors. The polishing head is configured to perform chemical-mechanical planarization (CMP) on an article. The polishing pad is configured to support the article. The light source is configured to emit an incident light. The polishing fluid is configured to perform CMP including a plurality of light-absorption particles being capable of transferring charges to a stop layer in the article in response the incident light. The current detector is configured to detect a current in response to the light-absorption particles transferring charges to the stop layer. The one or more processors are configured to control the polishing head based on the detected current.

Abstract: Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization includes: a polishing pad configured to support an article for chemical-mechanical planarization (CMP), wherein the article includes a CMP stop material, a polishing head configured to perform chemical-mechanical planarization on the article, a light source configured to provide an incident light, a polishing fluid including a plurality of luminescent particles capable of emitting a fluorescent light in response to the incident light, a fluorescence detector configured to detect the intensity of the fluorescent light, and at least one processor coupled to the fluorescent detector and the polishing head, wherein the at least one processor is configured to control the polishing head based on the detected fluorescent light.

Abstract: Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system includes a polishing head, a polishing pad, a light source, a polishing fluid, a current detector, and one or more processors. The polishing head is configured to perform chemical-mechanical planarization (CMP) on an article. The polishing pad is configured to support the article. The light source is configured to emit an incident light. The polishing fluid is configured to perform CMP including a plurality of light-absorption particles being capable of transferring charges to a stop layer in the article in response the incident light. The current detector is configured to detect a current in response to the light-absorption particles transferring charges to the stop layer. The one or more processors are configured to control the polishing head based on the detected current.

Abstract: Systems and methods are provided for performing chemical-mechanical planarization on an article. An example system for performing chemical-mechanical planarization on an article includes a polishing head configured to perform a chemical-mechanical planarization (CMP) on an article, a polishing pad configured to support the article, a light source configured to emit an incident light, a polishing fluid including a plurality of emitter particles capable of emitting a fluorescent light in response to the incident light, a fluorescence light detector configured to detect the fluorescent light, and at least one processor configured to control the polishing head based on the detected fluorescent light.

Abstract: A color photoresist with gold nanoparticles and color filters made therefrom are provided. The color photoresist with gold nanoparticles includes substituted acrylate monomers, gold nanoparticles (or clusters), surfactants and a photo-polymerization initiator. The color filter includes a polyacrylate, gold nanoparticles (or clusters) and surfactants. The gold nanoparticles (or clusters) can be dispersed in the color photoresist or the color filter by the surfactants.

Abstract: A solar cell coating and a method for manufacturing the solar cell coating. The solar cell coating is formed by adding a low bandgap material, a semiconductor material and a conductive polymer to a solvent or performing high-temperature milling on a mixture formed by mixing a conductive polymer material, a low bandgap material and a semiconductor material so that the solar cell coating exhibits high capability in transporting carriers effectively to transmit the electrons and holes to respective electrodes rapidly. Since the low bandgap material exhibits a small bandgap, MEG takes place to generate a plurality of electro-hole pairs when a photon is absorbed by the low bandgap material. Besides, by mixing the three materials corresponding to different conductive and valence bands respectively, a ladder structure formed by the HOMO and the LUMO corresponding to the three materials respectively will assist effective and rapid carrier transport.

Abstract: A color photoresist with gold nanoparticles and color filters made therefrom are provided. The color photoresist with gold nanoparticles includes substituted acrylate monomers, gold nanoparticles (or clusters), surfactants and a photo-polymerization initiator. The color filter includes a polyacrylate, gold nanoparticles (or clusters) and surfactants. The gold nanoparticles (or clusters) can be dispersed in the color photoresist or the color filter by the surfactants.