Abstract: Methods of treating mercury contaminated gas comprising: introducing a hydrogen halide selected from HBr and HI into a mercury contaminated gas stream containing a quantity of particulate matter at an introduction rate sufficient to create a concentration of at least 0.1 ppmvd; wherein greater than 50% of all particulate matter in the mercury contaminated gas stream is a native particulate matter; contacting a quantity of active bromine with the native particulate matter; creating a doped particulate matter; coating a filtration media with the doped particulate matter; and passing a portion of the mercury contaminated gas stream through the doped particulate matter on the filtration media and other related methods are disclosed herein.

Abstract: Methods of treating mercury contaminated gas comprising: introducing a hydrogen halide selected from HBr and HI into a mercury contaminated gas stream containing a quantity of particulate matter at an introduction rate sufficient to create a concentration of at least 0.1 ppmvd; wherein greater than 50% of all particulate matter in the mercury contaminated gas stream is a native particulate matter; contacting a quantity of active bromine with the native particulate matter; creating a doped particulate matter; coating a filtration media with the doped particulate matter; and passing a portion of the mercury contaminated gas stream through the doped particulate matter on the filtration media and other related methods are disclosed herein.

Abstract: Methods of treating mercury contaminated gas comprising: introducing a hydrogen halide selected from HBr and HI into a mercury contaminated gas stream containing a quantity of particulate matter at an introduction rate sufficient to create a concentration of at least 0.1 ppmvd; wherein greater than 50% of all particulate matter in the mercury contaminated gas stream is a native particulate matter; contacting a quantity of active bromine with the native particulate matter; creating a doped particulate matter; coating a filtration media with the doped particulate matter and passing a portion of the mercury contaminated gas stream through the doped particulate matter on the filtration media and other related methods are disclosed herein.

Abstract: Devices and methods for reacting carbon dioxide with ammonia to produce an ammonium bicarbonate containing product are disclosed. Further disclosed are methods and devices pertaining to the handling of ammonia, ammonium bicarbonate products, and waste products associated with that production.

Abstract: Methods of treating mercury contaminated gas comprising: introducing a hydrogen halide selected from HBr and HI into a mercury contaminated gas stream containing a quantity of particulate matter at an introduction rate sufficient to create a concentration of at least 0.1 ppmvd; wherein greater than 50% of all particulate matter in the mercury contaminated gas stream is a native particulate matter; contacting a quantity of active bromine with the native particulate matter; creating a doped particulate matter; coating a filtration media with the doped particulate matter; and passing a portion of the mercury contaminated gas stream through the doped particulate matter on the filtration media and other related methods are disclosed herein.

Abstract: Methods of treating mercury contaminated gas comprising: introducing a hydrogen halide selected from HBr and HI into a mercury contaminated gas stream containing a quantity of particulate matter at an introduction rate sufficient to create a concentration of at least 0.1 ppmvd; wherein greater than 50% of all particulate matter in the mercury contaminated gas stream is a native particulate matter; contacting a quantity of active bromine with the native particulate matter; creating a doped particulate matter; coating a filtration media with the doped particulate matter; and passing a portion of the mercury contaminated gas stream through the doped particulate matter on the filtration media and other related methods are disclosed herein.

Abstract: Methods of treating mercury contaminated gas comprising: introducing a hydrogen halide selected from HBr and HI into a mercury contaminated gas stream containing a quantity of particulate matter at an introduction rate sufficient to create a concentration of at least 0.1 ppmvd; wherein greater than 50% of all particulate matter in the mercury contaminated gas stream is a native particulate matter; contacting a quantity of active bromine with the native particulate matter; creating a doped particulate matter; coating a filtration media with the doped particulate matter; and passing a portion of the mercury contaminated gas stream through the doped particulate matter on the filtration media and other related methods are disclosed herein.

Abstract: The present invention provides a method for the oxidation of Hg0 in coal fired flue gas to form Hg2+ which is absorbed by the scrubber solution in wet-FGD or SDA, or adsorbed by the fly ash and subsequently removed from the flue stack with ESP and FF, and/or any other means as are known in the art for SOx, NOx and particulate removals. The addition of a second flue gas stream having a halogen and fly ash therein simultaneously with said hydrogen halogen or interhalogens into a coal fired flue gas further increases the oxidation of Hg0 to Hg2+.

Abstract: A method to treat a silicon oxynitride surface, including a silicon oxynitride surface covered by a photo resist layer, is described in which the photo resist layer is first removed by an oxygen plasma treatment process, followed by an argon plasma treatment process to overetch the SiON layer.

Abstract: A method to treat a silicon oxynitride surface, including a silicon oxynitride surface covered by a photo resist layer, is described in which the photo resist layer is first removed by an oxygen plasma treatment process, followed by an argon plasma treatment process to overetch the SiON layer.

Abstract: A deposition process for forming a void-free dielectric layer is described. A first dielectric layer 204 is formed over a conductor pattern 202. A second dielectric layer 206 is formed to conform to the first dielectric layer. A third dielectric layer 208 is formed to cover the second dielectric layer. The first, second, and third dielectric layers can be formed by high density plasma deposition, atmospheric pressure deposition, and plasma enhanced deposition, respectively. The second dielectric layer can alternatively be formed by plasma enhanced deposition.