Patents by Inventor I-Wen Wang
I-Wen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11968817Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.Type: GrantFiled: February 28, 2022Date of Patent: April 23, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Lin Chen, Chao-Yuan Chang, Ping-Wei Wang, Fu-Kai Yang, Ting Fang, I-Wen Wu, Shih-Hao Lin
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Publication number: 20240097035Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Chen-Ming Lee, I-Wen Wu, Po-Yu Huang, Fu-Kai Yang, Mei-Yun Wang
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Publication number: 20240096985Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.Type: ApplicationFiled: November 27, 2023Publication date: March 21, 2024Inventors: I-Wen WU, Chen-Ming LEE, Fu-Kai YANG, Mei-Yun WANG
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Publication number: 20230261002Abstract: An IC device includes first and second power rails extending in a first direction and carrying one of a power supply or reference voltage, a third power rail extending between the first and second power rails and carrying the other of the power supply or reference voltage, and a plurality of transistors including first through fourth active areas extending between the first and second power rails, a plurality of gate structures extending perpendicularly to the first direction, and first and second conductive segments extending in the second direction across the third power rail. Each of the second and third active areas is adjacent to the third power rail, each of the first and second conductive segments is electrically connected to S/D structures in each of the second and third active areas, and the plurality of transistors is configured as one of an AOI, an OAI, or a four-input NAND gate.Type: ApplicationFiled: May 20, 2022Publication date: August 17, 2023Inventors: I-Wen WANG, Chia-Chun WU, Hui-Zhong ZHUANG, Yung-Chen CHIEN, Jerry Chang Jui KAO, Xiangdong CHEN
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Patent number: 11682837Abstract: An antenna module, including a feed point, a ground plane, a main radiator, and a parasitic radiator, is provided. The main radiator includes a first portion, a second portion, and a third portion. The first portion and the second portion extend from the feed point and meet at an intersection after turning. The third portion has a first section and a second section. The first section of the third portion is connected to the intersection, and the second section is connected to the ground plane. The parasitic radiator is connected to the second section and extends towards the first section of the third portion and keeps a coupling gap away from the first section.Type: GrantFiled: December 29, 2021Date of Patent: June 20, 2023Assignee: PEGATRON CORPORATIONInventors: I Wen Wang, Ming Hong Lee
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Publication number: 20220339609Abstract: In one aspect, the disclosure relates to relates to CO2-free methods of co-producing hydrogen and solid forms of carbon via methane decomposition. The methods are efficient, self-sustaining, and environmentally sound. In a further aspect, the disclosure relates to recyclable and recoverable catalysts supported by solid forms of carbon and methods for recycling the catalysts. In some aspects, the disclosure relates to catalysts that do not require support by solid forms of carbon. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.Type: ApplicationFiled: October 30, 2020Publication date: October 27, 2022Inventors: Jianli HU, I-Wen WANG, Lili LI, Robert Alexander DAGLE, Juan A. LOPEZ-RUIZ, Mengze XU, Stephen deLemos DAVIDSON
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Publication number: 20220247078Abstract: An antenna module, including a feed point, a ground plane, a main radiator, and a parasitic radiator, is provided. The main radiator includes a first portion, a second portion, and a third portion. The first portion and the second portion extend from the feed point and meet at an intersection after turning. The third portion has a first section and a second section. The first section of the third portion is connected to the intersection, and the second section is connected to the ground plane. The parasitic radiator is connected to the second section and extends towards the first section of the third portion and keeps a coupling gap away from the first section.Type: ApplicationFiled: December 29, 2021Publication date: August 4, 2022Applicant: PEGATRON CORPORATIONInventors: I Wen Wang, Ming Hong Lee
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Publication number: 20210371277Abstract: In one aspect, the disclosure relates to CO2-free and/or low-CO2 methods of co-producing hydrogen and solid forms of carbon via natural gas decomposition using microwave radiation. The methods are efficient, self-sustaining, and environmentally benign. In a further aspect, the disclosure relates to recyclable and recoverable catalysts useful for enhancing the disclosed methods, wherein the catalysts are supported by solid forms of carbon. Methods for recycling the catalysts are also disclosed. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.Type: ApplicationFiled: May 4, 2021Publication date: December 2, 2021Inventors: Jianli HU, Changle JIANG, Brandon ROBINSON, Xinwei BAI, I-Wen WANG
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Publication number: 20210284529Abstract: In various aspects, the present disclosure is directed to methods and compositions for the simultaneous production of carbon nanotubes and hydrogen gas from lower hydrocarbon comprises methane, ethane, propane, butane, or a combination thereof utilizing the disclosed catalysts. In various aspects, the disclosure relates to methods for COx-free production of hydrogen with concomitant production of carbon nanotubes. Also disclosed are methods and compostions for selective base grown carbon nanotubes over a disclosed catalyst composition. In a further aspect, the disclosure relates to mono, bimetallic, and trimetallic catalysts comprising a 3d transition metal (e.g., Ni, Fe, Co, Mn, Cr, Mo, and combinations thereof) over a support material selected from a silica, an alumina, a zeolite, titatnium dioxide, and combinations thereof. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.Type: ApplicationFiled: May 18, 2021Publication date: September 16, 2021Inventors: Jianli HU, Deepa Ayillath KUTTERI, I-Wen WANG
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Patent number: 11040876Abstract: In various aspects, the present disclosure is directed to methods and compositions for the simultaneous production of carbon nanotubes and hydrogen gas from lower hydrocarbon comprises methane, ethane, propane, butane, or a combination thereof utilizing the disclosed catalysts. In various aspects, the disclosure relates to methods for COx-free production of hydrogen with concomitant production of carbon nanotubes. Also disclosed are methods and compostions for selective base grown carbon nanotubes over a disclosed catalyst composition. In a further aspect, the disclosure relates to mono, bimetallic, and trimetallic catalysts comprising a 3d transition metal (e.g., Ni, Fe, Co, Mn, Cr, Mo, and combinations thereof) over a support material selected from a silica, an alumina, a zeolite, titatnium dioxide, and combinations thereof. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.Type: GrantFiled: September 18, 2018Date of Patent: June 22, 2021Assignee: WEST VIRGINIA UNIVERSITYInventors: Jianli Hu, Deepa Ayillath Kutteri, I-Wen Wang
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Publication number: 20190084832Abstract: In various aspects, the present disclosure is directed to methods and compositions for the simultaneous production of carbon nanotubes and hydrogen gas from lower hydrocarbon comprises methane, ethane, propane, butane, or a combination thereof utilizing the disclosed catalysts. In various aspects, the disclosure relates to methods for COx-free production of hydrogen with concomitant production of carbon nanotubes. Also disclosed are methods and compostions for selective base grown carbon nanotubes over a disclosed catalyst composition. In a further aspect, the disclosure relates to mono, bimetallic, and trimetallic catalysts comprising a 3d transition metal (e.g., Ni, Fe, Co, Mn, Cr, Mo, and combinations thereof) over a support material selected from a silica, an alumina, a zeolite, titatnium dioxide, and combinations thereof. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.Type: ApplicationFiled: September 18, 2018Publication date: March 21, 2019Inventors: Jianli Hu, Deepa Ayillath Kutteri, I-Wen Wang
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Patent number: 6606068Abstract: The layout of multi-antenna loops in this invention comprises: a plurality of antenna loops, wherein one terminal of each antenna loop is electrically coupled with an antenna switch and the other terminal is electrically connected to a ground wire. All antenna loops are symmetrical antenna loops each of which contains a plurality of n-shaped sections to form sawtooth-shaped regions and compound into a plurality of dummy closed regions. If the symmetrical antenna loops are in-phase state, the plurality of sawtooth-shaped regions consist of the plurality of n-shaped sections with the non-interlacing method; if the symmetrical antenna loops are oppositephase state, the plurality of sawtooth-shaped regions consist of the n-shaped sections with the interlacing method.Type: GrantFiled: February 5, 2002Date of Patent: August 12, 2003Assignee: Aiptek International Inc.Inventors: Ching-Chuan Chao, Chih-An Chen, I-Wen Wang
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Publication number: 20030146881Abstract: The layout of multi-antenna loops in this invention comprises: a plurality of antenna loops, wherein one terminal of each antenna loop is electrically coupled with an antenna switch and the other terminal is electrically connected to a ground wire. All antenna loops are symmetrical antenna loops each of which contains a plurality of n-shaped sections to form sawtooth-shaped regions and compound into a plurality of dummy closed regions. If the symmetrical antenna loops are in-phase state, the plurality of sawtooth-shaped regions consist of the plurality of n-shaped sections with the non-interlacing method; if the symmetrical antenna loops are oppositephase state, the plurality of sawtooth-shaped regions consist of the n-shaped sections with the interlacing method.Type: ApplicationFiled: February 5, 2002Publication date: August 7, 2003Inventors: Ching-Chuan Chao, Chih-An Chen, I-Wen Wang
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Patent number: 5385556Abstract: An endcap for a hypodermic syringe is disclosed. The endcap is comprised of a sheath and a base section. The sheath, having a proximal and distal end, is hollow and resiliently deformable and has a slit extending substantially the length of the sheath. The proximal end of the sheath is open. The base section is attached to and extends radially outwardly from the periphery of the sheath's proximal end. The base section is disposed opposite of the slit and includes two spaced apart outwardly extending leg supports.Type: GrantFiled: December 8, 1993Date of Patent: January 31, 1995Inventors: I-Wen Wang, Wei-Ming Wang