Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.

Abstract: A radiation device includes: a first substrate; a second substrate; a dielectric layer disposed between the first substrate and the second substrate; and a film layer structure disposed on the first substrate. The resistivity of the film layer structure is between 108 and 5×1014 ?-cm. Therefore, frequency modulation range of radiation signals of the radiation device can be increased.

Abstract: A liquid-crystal antenna device includes a signal source, a driving module, a correction module, and a plurality of radiation units. The signal source provides an input electromagnetic wave. The driving module outputs a plurality of initial voltage signals according to a radiation address. The correction module receives the initial voltage signals and outputs a plurality of corrected voltage signals according to a lookup table. The radiation units respectively receive the corrected voltage signals and are coupled to the input electromagnetic wave to generate an output electromagnetic wave.

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

Abstract: An antenna device includes a first dielectric substrate, a first radiator disposed on the first dielectric substrate, a second dielectric substrate disposed on the first radiator, a second radiator disposed between the first dielectric substrate and the second dielectric substrate, a main radiator, disposed on the second dielectric substrate, and a modulation structure located between a first radiation portion of the first radiator and a second radiation portion of the second radiator. The first radiation portion, the modulation structure, and the second radiation portion are located in a central area.

Abstract: A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.

Abstract: A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 ?m to 10 ?m. A high-frequency device is also provided.

Abstract: An electronic device is provided. The electronic device includes a first substrate. The electronic device also includes a multilayer electrode disposed on the first substrate. The multilayer electrode includes a first conductive layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer. The electronic device further includes a second substrate facing the first substrate. In addition, the electronic device includes a working medium disposed between the first substrate and the second substrate. The chemical electromotive force of the second conductive layer is between that of the first conductive layer and the third conductive layer.

Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 ?m, and less than the thickness of the sealing element.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a first insulating structure, a second substrate, a second conductive layer and a liquid-crystal layer. The first conductive layer is disposed on the first substrate. The first insulating structure is disposed on the first conductive layer, and the first insulating structure includes a first region and a second region. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The thickness of the first region is less than the thickness of the second region, and at least a portion of the first region is disposed in an overlapping region of the first conductive layer and the second conductive layer.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a second substrate, a liquid-crystal layer, a buffer layer, and an alignment layer. The first conductive layer is disposed on the first substrate, and the first conductive layer has an opening. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The buffer layer is disposed in the opening and adjacent to an overlapping region of the first conductive layer and the second conductive layer. The alignment layer is disposed between the first conductive layer and the liquid-crystal layer.

Abstract: An antenna device is provided. The antenna device includes a first substrate and a second substrate facing the first substrate. The first substrate includes an inner surface and an outer surface opposite the inner surface of the first substrate. The second substrate includes an inner surface and an outer surface opposite the inner surface of the second substrate. The antenna device also includes a die disposed between the first substrate and the second substrate, a redistribution layer disposed between the die and the inner surface of the second substrate, and an antenna unit electrically connected to the die via the redistribution layer. The antenna unit is arranged on at least one of the inner surface of the first substrate, the outer surface of the first substrate, the inner surface of the second substrate and the outer surface of the second substrate.

Abstract: A microwave modulation device includes a first radiator, a second radiator and a modulation structure. The first radiator includes a substrate; a metal layer disposed on the substrate; a protective layer disposed on at least a portion of the metal layer and including a through hole overlapping with at least a portion of the metal layer; and an etch stop layer disposed between the metal layer and the protective layer. The second radiator disposed corresponding to the first radiator. The modulation structure is disposed between the first radiator and the second radiator.

Abstract: A liquid-crystal antenna apparatus includes a liquid-crystal antenna unit. The liquid-crystal unit includes a first substrate, a second substrate, a first radiator, a second radiator, a main radiator, a liquid-crystal layer, and a temperature sensor. The first substrate includes a first surface and a second surface. The second substrate includes a third surface and a fourth surface, wherein the first surface and the third surface face each other. The first radiator is disposed on the first surface. The second radiator is disposed on the third surface. The main radiator is disposed on the fourth surface and used for emitting wireless signals. The liquid-crystal layer is located between the first radiator and the second radiator. The temperature sensor is disposed on at least one of the first surface, the second surface, the third surface, and the fourth surface.

Abstract: A microwave modulation device includes a first radiator; a second radiator disposed on the first radiator; a third radiator disposed on the second radiator; a support structure disposed between the first radiator and the second radiator; and a modulation structure disposed between the second radiator and the third radiator. A microwave-transmission layer is located among the space defined by the first radiator, the second radiator, and the support structure. The microwave-transmission layer is gas, substantially vacuum, liquid or insulating material.

Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 ?m, and less than the thickness of the sealing element.

Abstract: A radiation device includes a transistor substrate. A first transistor, a second transistor, a first electrode pad, a second electrode pad, a first conductive line, and a second conductive line are disposed on the transistor substrate. The first electrode pad is disposed adjacent to the first transistor, the second electrode pad is disposed adjacent to the second transistor, the first transistor is electrically connected to the first electrode pad through the first conductive line, and the second transistor is electrically connected to the second electrode pad through the second conductive line. The distance between the first transistor and the first electrode pad is shorter than the distance between the second transistor and the second electrode pad. The ratio of the total area of the first conductive line and the total area of the second conductive line is between 0.8 and 1.2.

Abstract: A liquid-crystal antenna device includes a signal source, a driving module, a correction module, and a plurality of radiation units. The signal source provides an input electromagnetic wave. The driving module outputs a plurality of initial voltage signals according to a radiation address. The correction module receives the initial voltage signals and outputs a plurality of corrected voltage signals according to a lookup table. The radiation units respectively receive the corrected voltage signals and are coupled to the input electromagnetic wave to generate an output electromagnetic wave.

Abstract: An antenna device is provided, which includes a first substrate, and a second substrate facing and spaced with the first substrate in a distance. At least one working element disposed between the first substrate and the second substrate, wherein the at least one working element is filled with a modulation material. At least one buffer element is connected with the at least one working element for adjusting the amount of the modulation material in the at least one working element.