Patents by Inventor I-Yin Lu

I-Yin Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices and methods of manufacture thereof
    Patent number: 9548305
    Abstract: Semiconductor devices and methods of manufacture are disclosed. A representative transistor device includes two fins over a workpiece. An insulating material is over the fins. The insulating material is not disposed between the fins. A dielectric material is over sidewalls of the insulating material and over a portion of the workpiece between the fins. A gate is over the dielectric material. The gate includes a first conductive material and a second conductive material over the first conductive material. The second conductive material is recessed below a top surface of the insulating material. The second conductive material has a top surface with a rounded profile.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: January 17, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu Chao Lin, Ming-Ching Chang, I-Yin Lu, Jih-Jse Lin, Chao-Cheng Chen
  • Semiconductor Devices and Methods of Manufacture Thereof
    Publication number: 20160197079
    Abstract: Semiconductor devices and methods of manufacture are disclosed. A representative transistor device includes two fins over a workpiece. An insulating material is over the fins. The insulating material is not disposed between the fins. A dielectric material is over sidewalls of the insulating material and over a portion of the workpiece between the fins. A gate is over the dielectric material. The gate includes a first conductive material and a second conductive material over the first conductive material. The second conductive material is recessed below a top surface of the insulating material. The second conductive material has a top surface with a rounded profile.
    Type: Application
    Filed: March 16, 2016
    Publication date: July 7, 2016
    Inventors: Yu Chao Lin, Ming-Ching Chang, I-Yin Lu, Jih-Jse Lin, Chao-Cheng Chen
  • Semiconductor devices and methods of manufacture thereof
    Patent number: 9337195
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece including a gate dielectric and a gate disposed over the gate dielectric, and reshaping a top surface of the gate to form a gate with a rounded profile.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: May 10, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu Chao Lin, Ming-Ching Chang, I-Yin Lu, Jih-Jse Lin, Chao-Cheng Chen
  • Semiconductor Devices and Methods of Manufacture Thereof
    Publication number: 20150171084
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece including a gate dielectric and a gate disposed over the gate dielectric, and reshaping a top surface of the gate to form a gate with a rounded profile.
    Type: Application
    Filed: December 18, 2013
    Publication date: June 18, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu Chao Lin, Ming-Ching Chang, I-Yin Lu, Jih-Jse Lin, Chao-Cheng Chen