Abstract: The present invention relates to liquid-crystalline (LC) media and to LC displays (LCDs) containing these media, in particular to LCDs of the twisted nematic (TN) mode, preferably to displays of the LCOS (LC on silicon) mode.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: A semiconductor device and method of fabricating the same include a substrate, a first epitaxial layer, a first protection layer, and a contact etching stop layer. The substrate includes a PMOS transistor region, and the first epitaxial layer is disposed on the substrate, within the PMOS transistor region. The first protection layer is disposed on the first epitaxial layer, covering surfaces of the first epitaxial layer. The contact etching stop layer is disposed on the first protection layer and the substrate, wherein a portion of the first protection layer is exposed from the contact etching stop layer.

Abstract: The present invention relates to liquid-crystalline (LC) media and to LC displays (LCDs) containing these media, in particular to LCDs of the twisted nematic (TN) mode, preferably to displays of the LCOS (LC on silicon) mode.

Abstract: A timbre processing adapter socket for electric guitar is provided, including a socket body and a fixing unit. The socket body includes a groove seat and an assembling seat connected with each other. The groove seat has an accommodation groove, and a signal transmitter is arranged on an inner end portion of the accommodation groove. A timbre processor is accommodated in the accommodation groove and further electrically connected to the signal transmitter. The assembling seat is provided with an audio input hole, a timbre processing signal output hole, at least one speaker and at least one battery connected with each other electrically. The fixing unit fixes the socket body detachably on an external end portion of the electric guitar.