Abstract: A light emitting device comprises a first electrode, a second electrode, and an emissive layer (EML) between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode. The EML comprises a charge transport matrix of a first polarity, a plurality of quantum dots in the charge transport matrix, and a plurality of charge transport nanoparticles of a second polarity in the charge transport matrix.

Abstract: A light emitting device comprises a first electrode, a second electrode, and an emissive layer (EML) between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode. The EML comprises a charge transport matrix of a first polarity, a plurality of quantum dots in the charge transport matrix, and a plurality of charge transport nanoparticles of a second polarity in the charge transport matrix.

Abstract: A light emitting device includes a first electrode, a second electrode, and an emissive layer between the first and second electrodes. The emissive layer comprises quantum dots that are capable of producing circularly polarized luminescence. The quantum dots are chiral structured perovskite quantum dots, each comprising a core having a chiral crystal structure.

Abstract: A light emitting device includes a first electrode, a second electrode, and an emissive layer between the first and second electrodes. The emissive layer comprises quantum dots that are capable of producing circularly polarized luminescence. The quantum dots are chiral structured perovskite quantum dots, each comprising a core having a chiral crystal structure.

Abstract: A method is disclosed for forming an emissive layer of a light-emitting device. One or more layers of the light-emitting device are formed. A solution including quantum dots having ligands at the outer surface thereof is contacted with the uppermost layer of the light-emitting device. A portion of the solution is subjected to external activation stimuli to form a crosslinked layer on the uppermost formed layer of the light-emitting device, the crosslinked layer including the ligands at the outer surface of the quantum dots in a crosslinked state. The solution is washed away, and the crosslinked layer is contacted with ligand exchange solution including compact ligands to perform a ligand exchange. Also disclosed is a light-emitting device including an anode, cathode, and emissive layer disposed therebetween, the emissive layer including quantum dots and compact ligands at the outer surface thereof.

Abstract: A light-emitting device includes a first electrode, a second electrode, and an emissive layer between the first and second electrodes, where the emissive layer comprises quantum dots and oxygen scavenging nanoparticles. The oxygen scavenging nanoparticles comprise at least one of one or more iron based materials, and one or more organic polymer based materials.

Abstract: A method is disclosed for forming an emissive layer of a light-emitting device. One or more layers of the light-emitting device are formed. A solution including quantum dots having ligands at the outer surface thereof is contacted with the uppermost layer of the light-emitting device. A portion of the solution is subjected to external activation stimuli to form a crosslinked layer on the uppermost formed layer of the light-emitting device, the crosslinked layer including the ligands at the outer surface of the quantum dots in a crosslinked state. The solution is washed away, and the crosslinked layer is contacted with ligand exchange solution including compact ligands to perform a ligand exchange. Also disclosed is a light-emitting device including an anode, cathode, and emissive layer disposed therebetween, the emissive layer including quantum dots and compact ligands at the outer surface thereof.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction.

Abstract: A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction.

Abstract: A method for determining whether a test compound binds to a large RNA target, comprising the steps of: (a) contacting the test compound with a pair of indicator molecules comprising (i) a fluorescent oxazolidinone or aminoglycoside reporter molecule and (ii) the large RNA target; and (b) measuring the fluorescence of reporter molecule in the presence of the test compound and comparing this value to the fluorescence of the reporter in the absence of the test compound. It has been found that large RNA molecule are advantageous in this type of binding assay.

Abstract: The invention provides a method for determining whether a test compound binds to a target RNA, the method comprising the steps of: (a) contacting the test compound with a pair of indicator molecules comprising an antimicrobial labelled with a donor group or an acceptor group and the target RNA labelled with a complementary acceptor or donor group, the pair being capable of binding to each other in an orientation that permits the donor group to come into sufficient proximity to the acceptor group to permit fluorescent resonance energy transfer and/or quenching to take place; and (b) measuring the fluorescence of the target RNA and/or the antimicrobial in the presence of the test compound and comparing this value to the fluorescence of a standard.