Abstract: Optical devices and systems including a polarization maintaining interconnect are disclosed. An optical assembly can include an optical component, a low-birefringence optical fiber and a polarization transformer. The polarization transformer is coupled between the optical component and the optical fiber. The polarization transformer is configured to transform between a substantially circularly-polarized light at the low-birefringence optical fiber and a substantially linearly-polarized light at the optical component.

Abstract: The present disclosure provides Radio Frequency (RF) drive level control systems and methods for an Electro-Optic (EO) M-ary Phase-Shift Keying (M-PSK) phase modulator. Specifically, an M-PSK drive waveform is tightly controlled for maximum symmetry in the associated constellation. In an exemplary embodiment, the present disclosure includes an M-PSK transmitter, an M-PSK electro-optic phase modulator, and phase modulation method that each control RF drive level based upon a carrier suppression ratio defined as a measure of ratio of a modulated time-averaged E-field to the magnitude of the E-field. In an exemplary embodiment, the carrier suppression ratio is measured based on a modulation depth measurement.

Abstract: Optical devices and systems including a polarization maintaining interconnect are disclosed. An optical assembly can include an optical component, a low-birefringence optical fiber and a polarization transformer. The polarization transformer is coupled between the optical component and the optical fiber. The polarization transformer is configured to transform between a substantially circularly-polarized light at the low-birefringence optical fiber and a substantially linearly-polarized light at the optical component.

Abstract: The present disclosure provides Radio Frequency (RF) drive level control systems and methods for an Electro-Optic (EO) M-ary Phase-Shift Keying (M-PSK) phase modulator. Specifically, an M-PSK drive waveform is tightly controlled for maximum symmetry in the associated constellation. In an exemplary embodiment, the present disclosure includes an M-PSK transmitter, an M-PSK electro-optic phase modulator, and phase modulation method that each control RF drive level based upon a carrier suppression ratio defined as a measure of ratio of a modulated time-averaged E-field to the magnitude of the E-field. In an exemplary embodiment, the carrier suppression ratio is measured based on a modulation depth measurement.

Abstract: A method for integrating optical devices in a single growth step by utilizing a combination of Selective Area Growth and Etch (SAGE) is provided. An first device is formed between a set of oxide-masked regions, whilst a second device is formed in an adjacent planar region. By use of Selected Area Growth and Etch (SAGE), in which the growth between the oxide-masked regions is greater than the growth in the planar region, and in which the etch rate in the area between the oxide-masked regions is substantially the same as that in the planar region, the number of active quantum layers for the first device are formed between the oxide-masked regions, and a different number of layers for the second device is formed in the planar region.

Abstract: Through the introduction of an imaging multimode interference device in an integrated optical circuit, such performance degradations as lateral waveguide field oscillations and backreflections may be suppressed. The suppression of lateral waveguide field oscillations (that may occur due to misaligned optical coupling), in particular, can significantly reduce variations in the power splitting ratio of an optical power splitting structure, such as those employed by a Mach-Zehnder modulator.

Abstract: A current tuned optical attenuator includes a Mach-Zehnder interferometer that relies on the creation of free carriers to create a phase difference in an optical signals along two waveguide arms.

Abstract: In order to provide a low power duobinary modulator for the long reach 10 Gb/s metro space that is relatively small and relatively inexpensive to make, a method of operating a Multiple Quantum Well (MQW) III-V Mach-Zehnder (MZ) optical modulator to have it provide a high-quality duobinary signal is provided. The method of operating the MQW III-V MZ optical modulator provided by the invention makes possible a high-quality duobinary modulator that has substantially balanced ‘on’ states. That is to say, both duobinary ‘on’ states are characterized by having respective output signals with substantially equivalent: peak intensities; high extinction ratios; and low frequency chirp.

Abstract: A method for integrating optical devices in a single growth step by utilizing a combination of Selective Area Growth and Etch (SAGE) is provided. An first device is formed between a set of oxide-masked regions, whilst a second device is formed in an adjacent planar region. By use of Selected Area Growth and Etch (SAGE), in which the growth between the oxide-masked regions is greater than the growth in the planar region, and in which the etch rate in the area between the oxide-masked regions is substantially the same as that in the planar region, the number of active quantum layers for the first device are formed between the oxide-masked regions, and a different number of layers for the second device is formed in the planar region.

Abstract: In order to provide a low power duobinary modulator for the long reach 10 Gb/s metro space that is relatively small and relatively inexpensive to make, a method of operating a Multiple Quantum Well (MQW) III-V Mach-Zehnder (MZ) optical modulator to have it provide a high-quality duobinary signal is provided. The method of operating the MQW III-V MZ optical modulator provided by the invention makes possible a high-quality duobinary modulator that has substantially balanced ‘on’ states. That is to say, both duobinary ‘on’ states are characterized by having respective output signals with substantially equivalent: peak intensities; high extinction ratios; and low frequency chirp.

Abstract: A current tuned optical attenuator includes a Mach-Zehnder interferometer that relies on the creation of free carriers to create a phase difference in an optical signals along two waveguide arms.

Abstract: Through the introduction of an imaging multimode interference device in an integrated optical circuit, such performance degradations as lateral waveguide field oscillations and backreflections may be suppressed. The suppression of lateral waveguide field oscillations (that may occur due to misaligned optical coupling), in particular, can significantly reduce variations in the power splitting ratio of an optical power splitting structure, such as those employed by a Mach-Zehnder modulator.