Abstract: Changes to interpreted horizons in a subsurface representation are propagated to synthetic horizons in the subsurface representation by maintaining relative distances between the synthetic horizons and interpreted horizons. Distance ratios of synthetic horizons between interpreted horizons are applied to changed interpreted horizons to derive new locations of synthetic horizons.

Abstract: Changes to interpreted horizons in a subsurface representation are propagated to synthetic horizons in the subsurface representation by maintaining relative distances between the synthetic horizons and interpreted horizons. Distance ratios of synthetic horizons between interpreted horizons are applied to changed interpreted horizons to derive new locations of synthetic horizons.

Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.

Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than about 100%, and more typically greater than about 200%. The film is plasma cured for between about 15 and about 120 seconds at a temperature less than about 350° C. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealing temperature is typically less than about 450° C.