Abstract: There is provided a network comprising a network switch comprising a pre-configured routing table and a first physical port coupled to an endpoint sensor device initiated with an initial network address. One or more processors are coupled to a third physical port of the network switch and are configured to: transmit configuration data for the endpoint sensor device to the third physical port via a first virtual area network. The first virtual area network is associated by the pre-configured routing table with the first physical port and a second virtual area network is associated with a second physical port of the network switch. A command to the endpoint sensor to use a different network address is transmitted by the network switch via the first physical port based at least in part on receiving the configuration data.

Abstract: Toast notifications can be managed via a toast adapter and plugins. A toast adapter can function as an intermediary between a service and an application that interfaces with the Windows toast framework. The service can employ plugins that are configured to send toast requests to the toast adapter. The toast requests can include metadata from which the toast adapter can construct toast content. The toast adapter can then interface with the application to submit the toast content to the Windows toast framework to cause the toast notifications to be displayed. When a user interacts with a toast notification, the arguments that the Windows toast framework provides can be relayed by the application to the toast adapter. The toast adapter may then identify which plugin was the source of the toast notification and provide an indication of the user's interaction with the toast notification to the plugin.

Abstract: A cell measurement method used in a mobile station camping on a serving cell is provided, wherein the serving cell sends system information of neighbor cells to the mobile station. A first set of the neighbor cells is determined based on a measurement rule for cell reselection. A second set of the neighbor cells is determined based on a report request for radio link establishment. A subset is chosen from the second set. Finally, the neighbor cells of a union of the first set and the subset are measured.

Abstract: An iSCSI name forwarding technique allows a security appliance to assume iSCSI names of one or more clients and one or more storage systems in a network. The security appliance is coupled between each client and storage system, and is configured to intercept a data access request issued by the client that is destined for the storage system. Each iSCSI name of the storage system is an iSCSI target name associated with secure storage, i.e., a cryptainer, served by the storage system, whereas the iSCSI name of the client is an iSCSI initiator name of the network entity, i.e., the client, which initiates the data access request to access data stored on the cryptainer.

Abstract: A cell measurement method used in a mobile station camping on a serving cell is provided, wherein the serving cell sends system information of neighbor cells to the mobile station. A first set of the neighbor cells is determined based on a measurement rule for cell reselection. A second set of the neighbor cells is determined based on a report request for radio link establishment. A subset is chosen from the second set. Finally, the neighbor cells of a union of the first set and the subset are measured.

Abstract: The invention relates to synthetic hybrid rock compositions, articles of manufacture and related processes employing mineral waste starting materials such as mine tailings, mine development rock, ash, slag, quarry fines, and slimes, to produce valuable articles of manufacture and products, which are characterized by superior physical and structural characteristics, including low porosity, low absorption, increased strength and durability, and retained plasticity. The resulting materials are compositionally and chemically distinct from conventional synthetic rock materials as demonstrated by scanning electron microprobe analysis, and are useful in a wide variety of applications, particularly with respect to commercial and residential construction.

Abstract: A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 1.2 to 1.6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.

Abstract: A method and system for growing a layer of semiconductor material is disclosed. The method can be used to grow a layer of a semiconducting material comprising at least one Group III element, nitrogen and at least one other Group V element as constituent elements thereof, the method comprising providing a reactor and supplying precursors to the reactor. The precursors include a precursor for each of the at least one Group III element, a precursor for the nitrogen, a precursor for each of the at least one Group V element other than nitrogen, and a precursor for an element having a stronger bond strength with nitrogen than each of the at least one Group III element has with nitrogen. The method can be implemented in, for example, a metal organic chemical vapor deposition (MOCVD) reactor.

Abstract: A method and system for growing a layer of semiconductor material is disclosed. The method can be used to grow a layer of a semiconducting material comprising at least one Group III element, nitrogen and at least one other Group V element as constituent elements thereof, the method comprising providing a reactor and supplying precursors to the reactor. The precursors include a precursor for each of the at least one Group III element, a precursor for the nitrogen, a precursor for each of the at least one Group V element other than nitrogen, and a precursor for an element having a stronger bond strength with nitrogen than each of the at least one Group III element has with nitrogen. The method can be implemented in, for example, a metal organic chemical vapor deposition (MOCVD) reactor.

Abstract: The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.

Abstract: A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 1.2 to 1.6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.