Abstract: The invention discloses a balance filter formed from a combination of a first circuit and a second circuit, wherein both the first circuit and the second circuit have at least one through-hole via inductor. The balance filter is connected to an IC through a first terminal and a second terminal, wherein a power trace is disposed between the first circuit and the second circuit to deliver the power to the IC.

Abstract: The invention discloses a high-frequency device having a through-hole via inductor in a substrate. The through-hole via inductor has an integral body. The inductance of the through-hole via inductor is greater than that of the horizontal inductor. The through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material. The present invention also discloses a method for manufacturing the structure of the high-frequency device, wherein the method mainly includes via-drilling and via-filling in the substrate, and lithography process on the substrate.

Abstract: The invention discloses a diplexer formed from the combination of a first filter and a second filter, wherein both the first filter and the second filter have at least one through-hole via inductor. The diplexer has an input terminal to receive an input signal. The first filter has a first terminal electrically connected to the input terminal and a second terminal to generate a first output signal; the second filter has a third terminal electrically connected to the input terminal and a fourth terminal to generate a second output signal. The diplexer has a first output terminal electrically connected to the second terminal of the first filter to output the first output signal and a second output terminal electrically connected to the fourth terminal of the second filter to output the second output signal.

Abstract: The present invention discloses a substrate-less electronic component. A conductive element is disposed in the plurality of insulating layers, wherein the plurality of insulating layers are not supported by a substrate. The substrate-less electronic component can be manufactured by performing film process on a plurality of conductive layers or insulating layers on the substrate before the substrate is removed. In one embodiment, a buffer layer can be formed on the substrate. After the process is done, the buffer layer can be easily removed to decouple the substrate from the layers on the substrate.

Abstract: The invention discloses a balance filter formed from a combination of a first circuit and a second circuit, wherein both the first circuit and the second circuit have at least one through-hole via inductor. The balance filter is connected to an IC through a first terminal and a second terminal, wherein a power trace is disposed between the first circuit and the second circuit to deliver the power to the IC.

Abstract: The invention discloses a diplexer formed from the combination of a first filter and a second filter, wherein both the first filter and the second filter have at least one through-hole via inductor. The diplexer has an input terminal to receive an input signal. The first filter has a first terminal electrically connected to the input terminal and a second terminal to generate a first output signal; the second filter has a third terminal electrically connected to the input terminal and a fourth terminal to generate a second output signal. The diplexer has a first output terminal electrically connected to the second terminal of the first filter to output the first output signal and a second output terminal electrically connected to the fourth terminal of the second filter to output the second output signal.

Abstract: The invention discloses a high-frequency device having a through-hole via inductor in a substrate. The through-hole via inductor has an integral body. The inductance of the through-hole via inductor is greater than that of the horizontal inductor. The through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material. The present invention also discloses a method for manufacturing the structure of the high-frequency device, wherein the method mainly includes via-drilling and via-filling in the substrate, and lithography process on the substrate.