Abstract: Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. A layer over the conductive levels includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus. In some embodiments the vertically-stacked conductive levels are wordline levels within a NAND memory array. Some embodiments include an integrated structure having vertically-stacked conductive levels alternating with dielectric levels. Vertically-stacked NAND memory cells are along the conductive levels within a memory array region. A staircase region is proximate the memory array region. The staircase region has electrical contacts in one-to-one correspondence with the conductive levels. A layer is over the memory array region and over the staircase region. The layer includes silicon, nitrogen, and one or more of carbon, oxygen, boron and phosphorus.

Abstract: The accelerometer is linear having a substantially planar plate-like proof mass (9) mounted by four or more flexible mounting legs (8) each co-planar with the proof mass (9) to a substantially planar plate-like support (10) fixedly mounted relative to the proof mass (9) and co-planar therewith. In this way the proof mass (9) is mounted for linear movement in a sensing direction in the plane containing the proof mass (9), mounting legs (8) and support (10) to sense acceleration change applied to the accelerometer. At least two spaced apart substantially planar capacitor plates (11) each co-planar with the proof mass, mounting legs and support, are provided for sensing linear movement of the proof mass (9) in the sensing direction C. The proof mass (9), mounting legs (8), support (10) and capacitor blades (11) are formed from a single sheet of silicon and the mounting legs (8) extend substantially perpendicularly to the sensing direction C.

Abstract: The accelerometer is linear having a substantially planar plate-like proof mass (9) mounted by four or more flexible mounting legs (8) each co-planar with the proof mass (9) to a substantially planar plate-like support (10) fixedly mounted relative to the proof mass (9) and co-planar therewith. In this way the proof mass (9) is mounted for linear movement in a sensing direction in the plane containing the proof mass (9), mounting legs (8) and support (10) to sense acceleration change applied to the accelerometer. At least two spaced apart substantially planar capacitor plates (11) each co-planar with the proof mass, mounting legs and support, are provided for sensing linear movement of the proof mass (9) in the sensing direction C. The proof mass (9), mounting legs (8), support (10) and capacitor blades (11) are formed from a single sheet of silicon and the mounting legs (8) extend substantially perpendicularly to the sensing direction C.

Abstract: An angular rate sensor or gyro includes a ring-like resonator (1) mounted by support beams (2) extending from the inner periphery of the ring (1) to a boss (4) on a base (3). The support beams (2) are flexible and allow the resonator (1) to vibrate in response to an electrostatic drive (6, 8) in a substantially undamped oscillation mode to permit the resonator to move relative to the support in response to turning rate. The support beams (2) and resonator (1) are made from crystalline silicon. Electrostatic sensors (7, 9) are provided for sensing movement of the resonator (1). The drive (6, 8) and sensors (7, 9) have plate-like elements made from crystalline silicon having surfaces located substantially normal to the plane of the resonator (1) at a spacing from the adjacent outer periphery of the resonator (1).