Patents by Inventor Ian David Tomblinson

Ian David Tomblinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS-controlled printhead sense circuit in inkjet printer
    Patent number: 8138775
    Abstract: A CMOS-controlled printhead sense circuit includes a CMOS control circuit module operable as a transmission gate switchable between first and second signal levels and a CMOS sense circuit module operable in a printhead sense mode in response to the CMOS control circuit module being switched to the first level and in a transparent mode in response to the control circuit module being switch to the second level. The CMOS control circuit module includes a combination of PMOS and NMOS FETs which define a CMOS switchable transmission gate. The CMOS sense circuit module includes a combination of PMOS and NMOS FETs which define respectively a switch device switchable between high and low states corresponding to the sense and transparent modes and a load enhancement device for the switch device.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: March 20, 2012
    Assignee: Lexmark International, Inc.
    Inventor: Ian David Tomblinson
  • CMOS-CONTROLLED PRINTHEAD SENSE CIRCUIT IN INKJET PRINTER
    Publication number: 20100141702
    Abstract: A CMOS-controlled printhead sense circuit includes a CMOS control circuit module operable as a transmission gate switchable between first and second signal levels and a CMOS sense circuit module operable in a printhead sense mode in response to the CMOS control circuit module being switched to the first level and in a transparent mode in response to the control circuit module being switch to the second level. The CMOS control circuit module includes a combination of PMOS and NMOS FETs which define a CMOS switchable transmission gate. The CMOS sense circuit module includes a combination of PMOS and NMOS FETs which define respectively a switch device switchable between high and low states corresponding to the sense and transparent modes and a load enhancement device for the switch device.
    Type: Application
    Filed: December 9, 2008
    Publication date: June 10, 2010
    Inventor: Ian David Tomblinson