Patents by Inventor Ian DEVINY
Ian DEVINY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11569371Abstract: We disclose herein a gate controlled bipolar semiconductor device comprising: a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a first conductivity type located over the drift region; a plurality of first contact regions of a second conductivity type located above the body region and having a higher doping concentration than the body region; a second contact region of a first conductivity type located laterally adjacent to the plurality of first contact regions, the second contact region having a higher doping concentration than the body region; at least two active trenches each extending from a surface into the drift region; an emitter trench extending from the surface into the drift region; wherein each first contact region adjoins an active trench so that, in use, a channel is formed along said each active trench and within the body region; wherein the second contact region adjoins the emitter trench; and whereType: GrantFiled: May 25, 2017Date of Patent: January 31, 2023Assignees: DYNEX SEMICONDUCTOR LIMITED, ZHUZHOU CRRC TIMES ELECTRIC CO. LTD.Inventors: Ian Deviny, Luther-King Ngwendson, John Hutchings
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Patent number: 11508723Abstract: We describe herein a high voltage semiconductor device comprising a power semiconductor device portion (100) and a temperature sensing device portion (185). The temperature sensing device portion comprises: an anode region (140), a cathode region (150), a body region (160) in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region (165) in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.Type: GrantFiled: June 13, 2018Date of Patent: November 22, 2022Assignees: DYNEX SEMICONDUCTOR LIMITED, ZHUZHOU CRRC TIMES ELECTRIC CO. LTD.Inventors: Chunlin Zhu, Vinay Suresh, Ian Deviny, Yangang Wang
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Publication number: 20220320295Abstract: We herein describe a silicon-carbide (SiC) based power semiconductor device comprising: a drain region of a first conductivity type; a drift region of the first conductivity type disposed on the drain region, the drift region having a lower doping concentration compared to the doping concentration of the drain region; a body region of a second conductivity type, opposite to the first conductivity type, disposed over the drift region; a contact region of the first conductivity type, disposed within the body region; a source Ohmic contact being disposed on the source region; and one or more trench gate regions being in contact with the source region, the body region and the drift region. Each of the one or more trench gate regions are configured to form a channel region in the body region between the source region and the drift region.Type: ApplicationFiled: June 18, 2020Publication date: October 6, 2022Inventors: Luther-King Ekonde NGWENDSON, Ian DEVINY, Yogesh Kumar SHARMA
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Publication number: 20220320310Abstract: We herein describe a method of manufacturing a semiconductor device having one or more trenches with an insulation layer.Type: ApplicationFiled: June 18, 2020Publication date: October 6, 2022Inventors: Luther-King Ekonde NGWENDSON, Ian DEVINY, John HUTCHINGS
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Publication number: 20220320322Abstract: We describe herein a gate controlled bipolar semiconductor device comprising a collector region of a first conductivity type, a drift region of a second conductivity type located over the collector region, a body region of a first conductivity type located over the drift region, a body region of a second conductivity type located over the drift region, at least one first contact region of a second conductivity type located above the body region and having a higher doping concentration compared to the body region, at least one second contact region of a first conductivity type located laterally adjacent to the at least one first contact region, the at least one second contact region having a higher doping concentration than the body region, at least one active trench extending from a surface into the drift region, wherein the at least one first contact region adjoins at least one active trench so that, in use, a channel region is formed along said at least one active trench and within the body region, and at lType: ApplicationFiled: June 18, 2020Publication date: October 6, 2022Inventors: Luther-King Ekonde NGWENDSON, Ian DEVINY
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Publication number: 20220320323Abstract: We herein describe a semiconductor device comprising a first element portion formed on a substrate, the first element portion being an operating region of an insulated gate bipolar transistor (IGBT) and a second element portion formed on the substrate, the second element portion being an operating region of a diode.Type: ApplicationFiled: June 18, 2020Publication date: October 6, 2022Inventors: Luther-King Ekonde NGWENDSON, Ian DEVINY
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Patent number: 11239351Abstract: A gate controlled semiconductor device comprising a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a first conductivity type located over the drift region; at least one first contact region of a second conductivity type located above the body region and having a higher doping concentration compared to the body region. The device further comprises at least one second contact region of a first conductivity type located laterally adjacent to the at least one first contact region, the at least one second contact region having a higher doping concentration than the body region. The device further comprises at least one active trench extending from a surface into the drift region, in which the at least one first contact region adjoins the at least one active trench so that, in use, a channel region is formed along said at least one active trench and within the body region.Type: GrantFiled: January 4, 2018Date of Patent: February 1, 2022Assignee: DYNEX SEMICONDUCTOR LIMITEDInventors: Luther-King Ngwendson, Ian Deviny, John Hutchings
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Publication number: 20210257355Abstract: We describe herein a high voltage semiconductor device comprising a power semiconductor device portion (100) and a temperature sensing device portion (185). The temperature sensing device portion comprises: an anode region (140), a cathode region (150), a body region (160) in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region (165) in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.Type: ApplicationFiled: June 13, 2018Publication date: August 19, 2021Inventors: Chunlin ZHU, Vinay SURESH, Ian DEVINY, Yangang WANG
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Publication number: 20200127128Abstract: We disclose herein a gate controlled bipolar semiconductor device comprising: a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region;a body region of a first conductivity type located over the drift region; a plurality of first contact regions of a second conductivity type located above the body region and having a higher doping concentration than the body region; a second contact region of a first conductivity type located laterally adjacent to the plurality of first contact regions, the second contact region having a higher doping concentration than the body region; at least two active trenches each extending from a surface into the drift region;an emitter trench extending from the surface into the drift region; wherein each first contact region adjoins an active trench so that, in use, a channel is formed along said each active trench and within the body region; wherein the second contact region adjoins the emitter trench; and whereinType: ApplicationFiled: May 25, 2017Publication date: April 23, 2020Inventors: Ian DEVINY, Luther-King NGWENDSON, John HUTCHINGS
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Publication number: 20200091328Abstract: A gate controlled semiconductor device comprising a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a first conductivity type located over the drift region; at least one first contact region of a second conductivity type located above the body region and having a higher doping concentration compared to the body region. The device further comprises at least one second contact region of a first conductivity type located laterally adjacent to the at least one first contact region, the at least one second contact region having a higher doping concentration than the body region. The device further comprises at least one active trench extending from a surface into the drift region, in which the at least one first contact region adjoins the at least one active trench so that, in use, a channel region is formed along said at least one active trench and within the body region.Type: ApplicationFiled: January 4, 2018Publication date: March 19, 2020Inventors: Luther-King NGWENDSON, Ian DEVINY, John HUTCHINGS